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Infineon Technologies IGW30N60TFKSA1

Part No.:
IGW30N60TFKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIGW30N60TFKSA1.pdf
Description:
IGBT TRENCH FS 600V 60A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:60

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Product details

Overview

IGW30N60TFKSA1 from Infineon is a 600 V, 30 A low-loss TRENCHSTOP™ IGBT with Fieldstop technology, designed for high-efficiency switching in frequency converters and UPS systems. It delivers 1.5 V typical VCE(sat) at 25°C, 175°C maximum junction temperature, 5 µs short-circuit withstand time, and low gate charge (167 nC) for fast, rugged operation.

For engineers reviewing the IGW30N60TFKSA1 datasheet, IGW30N60TFKSA1 pinout, IGW30N60TFKSA1 application, or IGW30N60TFKSA1 equivalent, key selection criteria include VCE(sat) stability over temperature, short-circuit robustness, thermal resistance (RthJC = 0.80 K/W), and compatibility with 15 V gate drive in hard-switching industrial inverters.

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop architecture to achieve tight parameter distribution, high ruggedness, and temperature-stable VCE(sat) with positive coefficient-enabling parallel operation without current imbalance. Its 167 nC total gate charge and 1.5 V VCE(sat) optimize conduction and switching loss trade-offs at 400 V DC-link voltage.

The device supports hard-switching inductive loads up to 175°C junction temperature, with validated 2.1 mJ total switching energy (Ets) at Tj = 175°C, VCC = 400 V, IC = 30 A, and rG = 10.6 Ω-making it suitable for 1–20 kHz motor drives and UPS output stages.

Key Specifications

ParameterValue and Actual Design Meaning
VCE600 V - rated blocking voltage for 400 V DC-link applications with 50% safety margin
IC30 A continuous - rated collector current at TC = 25°C, derates to 39 A at TC = 100°C
VCE(sat)1.5 V (typ.) at Tj = 25°C - enables low conduction loss in high-current motor phases
tSC5 µs - validated short-circuit withstand capability under VGE = 15 V, VCC ≤ 400 V, Tj ≤ 150°C
QGate167 nC - low gate charge reduces driver power and enables faster turn-on/turn-off transitions
RthJC0.80 K/W - thermal resistance from junction to case ensures efficient heatsink coupling in TO-247 packages
Ets2.1 mJ at Tj = 175°C - total switching energy defines thermal load during PWM operation at elevated temperature

Pinout & Package

IGW30N60TFKSA1 is housed in PG-TO247-3 package-a through-hole, single-island thermally optimized variant of TO-247 with isolated collector tab and standard 3-pin layout.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current pathConnected to DC-link positive; electrically and thermally coupled to metal tab for low-inductance, high-power routing
Gate (G)Control inputHigh-impedance MOS-controlled terminal requiring <100 nA leakage drive; sensitive to ESD and ringing
Emitter (E)Current return and reference nodeLow-inductance emitter connection critical for accurate current sensing and gate loop stability

Key Features

FeatureDesign Value
Positive VCE(sat) temperature coefficientEnables stable current sharing in paralleled IGBT configurations without external ballast resistors
JEDEC JESD47 qualificationValidated reliability for industrial power conversion applications per stress-test standards
Low EMI designReduced dV/dt and di/dt overshoot via optimized internal structure-minimizes filter component count
TRENCHSTOP™ + Fieldstop integrationCombines trench-gate cell density with field-stop drift region for optimal 600 V switching efficiency
Pb-free RoHS-compliant platingMeets environmental compliance requirements for global industrial equipment manufacturing

Applications

Industrial Motor DrivesUninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 5–15 kW AC servo drives operating at 4–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switching element in six-pack inverter topology, handling peak currents up to 90 A pulsed.

Use Value: 1.5 V VCE(sat) and 0.80 K/W RthJC reduce conduction loss and thermal footprint, enabling compact heatsink design.

Use Scenario: Output inverter stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave under battery backup.

IC Role / Device Role / Timing Role: Final-stage power switch in H-bridge configuration, supporting bidirectional energy flow during transfer switching.

Use Value: 5 µs short-circuit withstand time allows safe detection and shutdown during output fault events without destructive failure.

Solar InvertersInduction Heating Systems

Use Scenario: DC–AC stage in string inverters converting photovoltaic array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in unipolar or bipolar PWM modulation schemes with active clamp snubbing.

Use Value: Tight parameter distribution ensures consistent channel matching across multiple modules, improving MPPT tracking accuracy.

Use Scenario: Half-bridge resonant inverter in medium-frequency (20–50 kHz) induction cooktops and industrial heating units.

IC Role / Device Role / Timing Role: High-speed switching element controlling resonant tank current with precise dead-time control.

Use Value: Low gate charge (167 nC) and fast switching times (td(off) = 292 ns at 175°C) minimize switching losses at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW30N60TSame die, identical VCE(sat), QGate, and tSC; differs only in marking code and minor packaging labelingNo functional difference; qualified for same target applications including UPS and motor drivesSelect IKW30N60T when sourcing from alternate Infineon lot codes or distributor stock with identical spec sheet revision
STGP30NC60WDHigher VCE(sat) (1.8 V typ.), lower tSC (3 µs), higher RthJC (0.95 K/W), and larger gate charge (190 nC)Less suitable for high-temperature, high-reliability UPS output stages due to reduced short-circuit margin and thermal performancePrefer IGW30N60TFKSA1 where thermal headroom, short-circuit robustness, or switching efficiency at 175°C is critical

Compared with IKW30N60T and STGP30NC60WD, IGW30N60TFKSA1 offers superior thermal resistance and short-circuit immunity-critical for mission-critical UPS and high-derating industrial drives-while maintaining identical core electrical specs to IKW30N60T for drop-in replacement flexibility.

Availability

IGW30N60TFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IGW30N60TFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT product line targets high-efficiency, high-reliability power conversion-designed specifically for frequency converters, UPS, and motor control applications demanding ruggedness, thermal stability, and low-loss switching.

FAQ

What is the maximum allowable gate-emitter voltage for IGW30N60TFKSA1?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller capacitance coupling during high dV/dt transitions.

Does IGW30N60TFKSA1 include an integrated freewheeling diode?

No, IGW30N60TFKSA1 is a standalone IGBT without an integrated body diode. External anti-parallel diodes-such as Infineon's IDW30C60D-must be used in inductive switching applications to provide freewheeling current paths and manage reverse recovery behavior.

Can IGW30N60TFKSA1 operate reliably at 175°C junction temperature?

Yes, it is fully rated for continuous operation up to Tj = 175°C, with all key parameters-including VCE(sat) (1.9 V typ.), switching energy (2.1 mJ), and short-circuit withstand time (5 µs)-specified and validated at this temperature per JEDEC JESD47 standards.

What is the purpose of the positive temperature coefficient in VCE(sat)?

The positive VCE(sat) temperature coefficient ensures that as junction temperature rises, the saturation voltage increases-causing naturally balanced current sharing among paralleled devices without external current-sharing resistors or complex gate-drive matching.

IGW30N60TFKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
60 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
2.05V @ 15V, 30A
Power - Max:
187 W
Switching Energy:
1.46mJ
Input Type:
Standard
Gate Charge:
167 nC
Td (on/off) @ 25°C:
23ns/254ns
Test Condition:
400V, 30A, 10.6Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

IGW30N60TFKSA1 FAQ

1.How can I place an order for IGW30N60TFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW30N60TFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW30N60TFKSA1 reliable?

The price and inventory of IGW30N60TFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW30N60TFKSA1 is usually 5 days.

3.What payment methods are accepted for IGW30N60TFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW30N60TFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW30N60TFKSA1?

IGW30N60TFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW30N60TFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW30N60TFKSA1?

For technical support, including IGW30N60TFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW30N60TFKSA1 requirements.

6.How does Aetrix verify that IGW30N60TFKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW30N60TFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW30N60TFKSA1 meets industry standards.

7.What is the process for return or replacement of IGW30N60TFKSA1?

All IGW30N60TFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW30N60TFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW30N60TFKSA1 part is unused and in its original packaging.

Return procedure for IGW30N60TFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IGW30N60TFKSA1 Tags

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