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Infineon Technologies IGW30N60TPXKSA1

Part No.:
IGW30N60TPXKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIGW30N60TPXKSA1.pdf
Description:
IGBT TRENCH/FS 600V 53A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,340

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Product details

Overview

IGW30N60TPXKSA1 from Infineon is a 600V, 30A TRENCHSTOP™ Performance-series IGBT in PG-TO247-3 package, optimized for medium-frequency industrial power conversion. It delivers 1.6V VCE(sat) at 25°C and 175°C junction temperature, 0.42mJ turn-off energy at 25°C, and 5µs short-circuit withstand time under defined conditions - enabling high-efficiency motor drives and solar inverters.

For engineers reviewing the IGW30N60TPXKSA1 datasheet, IGW30N60TPXKSA1 pinout, IGW30N60TPXKSA1 application, or IGW30N60TPXKSA1 equivalent, key selection criteria include VCE(sat) stability over temperature, switching loss trade-offs at 175°C, gate charge (130nC), thermal resistance (0.50–0.75 K/W j-c), and short-circuit ruggedness in hard-switched topologies.

Technical Context

This IGBT employs trench-gate and field-stop architecture to simultaneously reduce conduction losses and tail current. Its low EMI signature stems from controlled fall time (12ns typ. at 25°C) and minimized reverse transfer capacitance (36pF).

The device integrates a co-packaged fast-recovery diode (IKW30N60DTP) referenced in switching energy measurements, with internal emitter inductance of 13.0nH measured 5mm from case - critical for layout-dependent voltage overshoot prediction in bridge configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating600V DC - supports 400V bus designs with 1.5× safety margin for transient overvoltage in UPS and solar DC-link applications
IC Continuous30A at TC = 25°C - derates to 38A at TC = 100°C per thermal design constraints
VCE(sat)1.60V (typ.) at 30A/25°C; rises to 1.94V at 175°C - enables low-conduction-loss operation across full industrial temperature range
Switching EnergyEoff = 0.42mJ (25°C); increases to 0.74mJ (175°C) - informs heatsink sizing and PWM frequency limits
Short-Circuit Withstand5µs at VGE = 15V, VCC ≤ 400V, Tvj = 150°C - defines fault-clearance timing window for protection circuitry
Thermal ResistanceRth(j-c) = 0.50–0.75 K/W - determines maximum allowable case-to-heatsink ΔT for 175°C junction limit
Gate ChargeQG = 130nC - sets driver output current requirement (e.g., ≥12A peak for 100ns turn-on)

Pinout & Package

PG-TO247-3 package: isolated mounting hole, single-plane leadframe, 3-pin vertical through-hole configuration with creepage/clearance compliant for 600V systems.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side power terminalConnected to DC-link positive in half-bridge; carries full load current and switching transients
Gate (G)Control inputRequires 15V drive for full enhancement; sensitive to dV/dt-induced false turn-on without proper gate resistor and layout
Emitter (E)Power return and reference nodeServes as common source for gate drive return path; internal 13nH inductance impacts switching waveform fidelity

Key Features

FeatureDesign Value
Trench + Fieldstop structureReduces VCE(sat) by ~15% vs planar IGBTs while maintaining 175°C operation capability
Low tail currentMinimizes turn-off energy (Eoff = 0.42mJ) and reduces snubber requirements in hard-switched converters
JEDEC-qualified reliabilityValidated for industrial power control lifetime targets under thermal cycling and humidity bias stress
Pb-free RoHS-compliant platingEnables compliance with EU RoHS Directive 2011/65/EU without lead-based solder compatibility compromises

Applications

Industrial Motor DrivesSolar Inverters

Use Scenario: Three-phase inverter stage in 5–15kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: High-side switch in 2-level topology operating at 4–16kHz PWM with active short-circuit protection.

Use Value: 1.6V VCE(sat) reduces conduction loss by ~20% vs legacy 600V IGBTs, improving system efficiency at partial load.

Use Scenario: DC-AC stage in string inverters converting photovoltaic array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching element in unipolar modulation scheme with bidirectional current flow during freewheeling.

Use Value: Low EMI profile (36pF Cres) simplifies EMI filter design, reducing BOM cost and board area.

Uninterruptible Power SuppliesMedium-Frequency Converters

Use Scenario: Online double-conversion UPS delivering clean 50/60Hz output with battery backup during mains failure.

IC Role / Device Role / Timing Role: Inverter leg switch handling 10–20kHz switching with strict THD and zero-crossing accuracy requirements.

Use Value: Stable VCE(sat) up to 175°C ensures consistent output regulation during sustained overload or ambient temperature rise.

Use Scenario: Isolated DC-DC converter in telecom rectifiers or industrial SMPS requiring 20–50kHz operation.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS-assisted turn-on.

Use Value: 5µs short-circuit rating allows robust fault response without desaturation detection delay penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN30N60B3Higher VCE(sat) (1.8V @ 30A/25°C); lower QG (95nC); no integrated diodeRequires external anti-parallel diode; better suited for resonant topologies where gate drive speed dominatesSelect when lower gate drive power and ZVS operation outweigh conduction loss penalty
STMicroelectronics STGW30H65DFB650V rating; higher VCE(sat) (1.9V); 150°C max Tvj; different TO-247 footprintLimited to 150°C junction; requires revised thermal design and layout for 650V clearanceChoose only if 650V margin is mandatory and 175°C operation is not required

Compared with IXGN30N60B3 and STGW30H65DFB, IGW30N60TPXKSA1 provides superior conduction efficiency at elevated temperature and integrated diode functionality - making it optimal for space-constrained, thermally demanding industrial inverters where 175°C operation and low EMI are prioritized.

Availability

IGW30N60TPXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IGW30N60TPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ Performance series targets high-efficiency, medium-frequency power conversion systems - emphasizing low conduction loss, rugged short-circuit behavior, and thermal robustness in harsh industrial environments.

FAQ

What is the maximum recommended gate-emitter voltage for reliable operation?

The absolute maximum gate-emitter voltage is ±20V, but Infineon specifies 15V as the nominal turn-on voltage for full saturation. Operating above +15V increases Miller-induced shoot-through risk without meaningful VCE(sat) reduction; staying within 13–15V ensures safe margin against transient overvoltage while maintaining low conduction loss.

Does IGW30N60TPXKSA1 include an integrated freewheeling diode?

No - IGW30N60TPXKSA1 is a discrete IGBT in a 3-pin TO-247 package. However, its switching energy characterization (Ets, Eon, Eoff) explicitly includes contributions from the co-packaged IKW30N60DTP diode referenced in the datasheet, meaning system-level performance assumes use with that companion diode.

How does thermal resistance vary between minimum and maximum specification values?

Rth(j-c) is specified as 0.50 K/W (typical) to 0.75 K/W (maximum), reflecting process variation in chip attach and leadframe thermal path. For thermal design, use 0.75 K/W to ensure worst-case junction temperature remains ≤175°C under rated power dissipation and case temperature conditions.

Can this IGBT be used in parallel configurations?

Yes - its positive VCE(sat) temperature coefficient (1.94V at 175°C vs 1.60V at 25°C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and identical heatsink contact pressure to minimize dynamic current imbalance during switching transitions.

IGW30N60TPXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Not For New Designs
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
53 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
1.8V @ 15V, 30A
Power - Max:
200 W
Switching Energy:
710µJ (on), 420µJ (off)
Input Type:
Standard
Gate Charge:
130 nC
Td (on/off) @ 25°C:
15ns/179ns
Test Condition:
400V, 30A, 10.5Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3

IGW30N60TPXKSA1 FAQ

1.How can I place an order for IGW30N60TPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW30N60TPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW30N60TPXKSA1 reliable?

The price and inventory of IGW30N60TPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW30N60TPXKSA1 is usually 5 days.

3.What payment methods are accepted for IGW30N60TPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW30N60TPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW30N60TPXKSA1?

IGW30N60TPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW30N60TPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW30N60TPXKSA1?

For technical support, including IGW30N60TPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW30N60TPXKSA1 requirements.

6.How does Aetrix verify that IGW30N60TPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW30N60TPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW30N60TPXKSA1 meets industry standards.

7.What is the process for return or replacement of IGW30N60TPXKSA1?

All IGW30N60TPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW30N60TPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW30N60TPXKSA1 part is unused and in its original packaging.

Return procedure for IGW30N60TPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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