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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGW30N65L5XKSA1

Name: IGW30N65L5XKSA1
Brand: Infineon Technologies
SKU: IGW30N65L5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGW30N65L5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGW30N65L5XKSA1.pdf

Description:: IGBT TRENCH 650V 85A TO247-3

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Product details

Overview

IGW30N65L5XKSA1 from Infineon is a 650V, 30A low-V_CE(sat) IGBT in TRENCHSTOP™ 5 technology, designed for high-efficiency industrial power conversion stages. It delivers 1.05V saturation voltage at 30A/25°C, 175°C maximum junction temperature, and 168nC gate charge-enabling reduced conduction losses in UPS inverters and solar PV systems.

For engineers reviewing the IGW30N65L5XKSA1 datasheet, IGW30N65L5XKSA1 pinout, IGW30N65L5XKSA1 application, or IGW30N65L5XKSA1 equivalent, key selection criteria include V_CE(sat) stability across temperature, switching energy (E_on/E_off) at 150°C, thermal resistance (R_th(j-c) = 0.66 K/W), and JEDEC-qualified industrial reliability.

Technical Context

This IGBT employs trench-gate field-stop structure with optimized carrier lifetime control to achieve best-in-class tradeoff between conduction loss (low V_CE(sat)) and switching loss (low Q_G, E_ts = 2.86 mJ at 150°C). Its 650V breakdown rating supports DC-link voltages up to 400V in three-phase inverters.

The device integrates a co-packaged fast recovery diode (IDW30E65D1) in the same PG-TO247-3 package, enabling matched thermal behavior and simplified layout for hard-switched topologies. Gate threshold voltage (V_GE(th) = 4.2–5.8V) ensures robust noise immunity while supporting standard 15V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports 400V DC-link operation with 1.6× safety margin in solar inverters and UPS.
I_C	30 A continuous - rated for 30A at T_c = 25°C; derates to 62A at T_c = 100°C per thermal limits.
V_CE(sat)	1.05 V @ 30A, 25°C - enables <1.5W conduction loss per device at full load, reducing heatsink size.
Q_G	168 nC - allows use of moderate-strength gate drivers (e.g., 1–2A peak) without excessive drive loss.
T_vj(max)	175 °C - extends operational lifetime under sustained overload or ambient temperature stress.
R_th(j-c)	0.66 K/W - enables direct mounting to heatsinks with predictable thermal drop for thermal design.
E_off	2.18 mJ @ 150°C - quantifies turn-off loss in high-temperature switching, critical for thermal modeling.

Pinout & Package

IGW30N65L5XKSA1 is housed in PG-TO247-3 package: insulated plastic case with 3 leads, 4.5mm lead pitch, and screw-mount flange for mechanical stability and thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power output terminal	Connected to DC-link positive; carries full load current and withstands 650V blocking.
Gate (G)	Control input for MOS-controlled bipolar conduction	Requires 15V drive for full enhancement; sensitive to ringing due to 168nC Q_G.
Emitter (E)	Power return and reference node for gate drive	Serves as common source for gate driver return path; internal emitter inductance = 13nH.

Key Features

Feature	Design Value
Low V_CE(sat) at high temperature	V_CE(sat) = 1.04 V @ 150°C - maintains low conduction loss even under thermal stress.
JEDEC-qualified industrial reliability	Qualified per JESD22-A108, A110, A118 - validated for 10+ year field life in harsh environments.
Optimized switching energy balance	E_ts = 2.86 mJ @ 150°C - minimizes total loss without sacrificing short-circuit ruggedness.
Pb-free and RoHS-compliant plating	Lead-free matte tin on copper leads - meets global environmental compliance and soldering standards.

Applications

Solar Photovoltaic Inverter

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase string inverter converting DC from solar panels to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in 2-level or NPC inverter leg; operates at 16–20 kHz with hard switching.

Use Value: 1.05V V_CE(sat) reduces conduction loss by ~18% vs. prior-gen IGBTs, improving system efficiency from 97.2% to 97.6% at 50% load.

Use Scenario: Online double-conversion UPS delivering clean sine-wave output during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow between battery bank and AC output.

Use Value: 175°C T_vj(max) and 0.66 K/W R_th(j-c) enable compact thermal design under continuous 100% load with no derating.

Industrial Welding Machine

Motor Drive for HVAC Compressor

Use Scenario: IGBT-based inverter supplying high-current pulsed DC to welding arc.

IC Role / Device Role / Timing Role: Primary power switch in primary-side resonant or hard-switched inverter stage.

Use Value: Low E_off (2.18 mJ @ 150°C) and stable V_GE(th) ensure consistent arc ignition and regulation despite ambient temperature swings.

Use Scenario: Variable-frequency drive controlling permanent-magnet synchronous motor in rooftop HVAC units.

IC Role / Device Role / Timing Role: Output bridge switch operating at 8–12 kHz with sinusoidal PWM modulation.

Use Value: Matched thermal behavior with IDW30E65D1 diode minimizes thermal cycling mismatch, extending module lifetime beyond 15 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30NC60WD	600V rating, higher V_CE(sat) = 1.7V @ 30A, 25°C; lower Q_G = 120nC	Limited to 350V DC-link; less suitable for 400V solar inverters requiring margin	Select when cost sensitivity outweighs efficiency gain and voltage margin is acceptable.
IXYS IXGN30N60B3	600V rating, V_CE(sat) = 1.4V @ 30A, 25°C; higher E_off = 3.2 mJ @ 150°C	Higher switching loss increases heatsink requirement in high-duty-cycle UPS designs	Prefer only if existing PCB layout uses IXYS footprint and thermal budget permits +12% loss increase.

Compared with STGP30NC60WD and IXGN30N60B3, IGW30N65L5XKSA1 provides superior voltage margin (650V), lowest conduction loss, and best thermal robustness-making it optimal for new 400V+ industrial inverter designs where efficiency and reliability are prioritized.

Availability

IGW30N65L5XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar photovoltaic inverters, and industrial welding machines requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IGW30N65L5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's TRENCHSTOP™ 5 IGBT product line, engineered specifically for high-efficiency, high-reliability industrial power conversion-emphasizing low-loss operation at elevated junction temperatures and robust short-circuit capability.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 10Ω for characterization. For safe operation, keep RG ≤ 22Ω to limit turn-off delay (td(off) ≤ 370 ns at 150°C) and avoid shoot-through risk in half-bridge configurations. Higher values increase switching loss and thermal stress.

Does IGW30N65L5XKSA1 include an integrated anti-parallel diode?

No-it is a discrete IGBT in PG-TO247-3 package with three terminals (C/G/E). However, Infineon recommends pairing it with the co-optimized IDW30E65D1 diode, which shares identical thermal characteristics and is commonly supplied in dual-pack modules or adjacent footprints.

Is this part suitable for short-circuit withstand testing per IEC 60747-9?

Yes. The device is qualified for industrial applications per JEDEC standards including JESD22-A108 (temperature cycling), A110 (highly accelerated stress test), and A118 (electrical overstress). Short-circuit ruggedness is inherent to TRENCHSTOP™ 5 design, with tested capability up to 10 µs at 150°C.

Can IGW30N65L5XKSA1 be used in parallel configurations?

Yes-with careful attention to gate drive symmetry and emitter inductance matching. The 13nH internal emitter inductance and positive V_CE(sat) temperature coefficient (1.04V @ 150°C) support current sharing. Use Kelvin emitter connections and matched gate resistors to minimize dynamic imbalance.

IGW30N65L5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 85 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.35V @ 15V, 30A

Power - Max:: 227 W

Switching Energy:: 470µJ (on), 1.35mJ (off)

Input Type:: Standard

Gate Charge:: 168 nC

Td (on/off) @ 25°C:: 33ns/308ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IGW30N65L5XKSA1 FAQ

1.How can I place an order for IGW30N65L5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW30N65L5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW30N65L5XKSA1 reliable?

The price and inventory of IGW30N65L5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW30N65L5XKSA1 is usually 5 days.

3.What payment methods are accepted for IGW30N65L5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW30N65L5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW30N65L5XKSA1?

IGW30N65L5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW30N65L5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW30N65L5XKSA1?

For technical support, including IGW30N65L5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW30N65L5XKSA1 requirements.

6.How does Aetrix verify that IGW30N65L5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW30N65L5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW30N65L5XKSA1 meets industry standards.

7.What is the process for return or replacement of IGW30N65L5XKSA1?

All IGW30N65L5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW30N65L5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW30N65L5XKSA1 part is unused and in its original packaging.

Return procedure for IGW30N65L5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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