Infineon Technologies IGW40N60H3FKSA1

Overview

IGW40N60H3FKSA1 from Infineon is a 600 V, 40 A high-speed trench and fieldstop IGBT with 1.95 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and PG-TO247-3 package. It integrates a very soft, fast-recovery anti-parallel diode and targets high-frequency switching in industrial power converters requiring low conduction loss and EMI control.

For engineers reviewing the IGW40N60H3FKSA1 datasheet, IGW40N60H3FKSA1 pinout, IGW40N60H3FKSA1 application, or IGW40N60H3FKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, short-circuit withstand time (5 µs), switching energy (E_on = 1.33 mJ at 175°C), and thermal resistance R_th(j–c) = 0.49 K/W.

Technical Context

This third-generation High Speed Switching Series IGBT uses TRENCHSTOP™ technology to achieve low V_CE(sat) and reduced switching losses while maintaining robust short-circuit capability (5 µs at 150°C). Its internal emitter inductance is 13.0 nH, and gate charge is 223 nC under standard test conditions (V_CC = 480 V, I_C = 40 A).

The device operates across –40°C to +175°C junction temperature range and supports pulsed collector current up to 160 A. Its dynamic parameters-including t_d(off) = 227 ns and t_f = 22 ns at 175°C-are optimized for hard-switched topologies with tight gate drive timing control.

Key Specifications

Pinout & Package

Package: PG-TO247-3 - Three-terminal through-hole package with isolated mounting screw hole, rated for industrial thermal cycling and mechanical reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IGW40N60H3FKSA1, IKW40N60H3FKSA1 offers identical electrical behavior and thermal performance, while IGW40N60H3B provides improved gate oxide endurance-making it suitable for extended-life deployments without altering heatsink or driver design.

Availability

IGW40N60H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding converters, and high-frequency motor drives requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IGW40N60H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's High Speed Switching Series third-generation IGBT product line, engineered specifically for industrial power conversion systems demanding high efficiency, ruggedness, and thermal resilience at switching frequencies up to 50 kHz.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The absolute maximum gate-emitter voltage is ±20 V per the datasheet's "Maximum ratings" table. Continuous operation above ±15 V risks irreversible gate oxide damage; recommended gate drive is +15 V / –5 V to ensure reliable turn-on and fast, controlled turn-off without Miller-induced false triggering.

Does IGW40N60H3FKSA1 include an integrated anti-parallel diode?

Yes-the device integrates a very soft, fast-recovery anti-parallel diode monolithically on the same die. This diode shares the emitter terminal and exhibits low reverse recovery charge (Q_rr) and negligible tail current, eliminating the need for discrete freewheeling diodes in half-bridge or full-bridge configurations.

Can this IGBT be used in parallel configurations?

Yes, but only with matched devices and careful attention to layout symmetry. The positive V_CE(sat) temperature coefficient (increasing from 1.95 V at 25°C to 2.50 V at 175°C) enables inherent current sharing; however, gate loop inductance imbalance must be minimized to avoid dynamic current skew during switching transitions.

What is the recommended gate resistor value for standard operation?

The datasheet specifies r_G = 7.9 Ω as the reference gate resistor for switching characterization (E_on/E_off, t_d(on), etc.). For most 10–30 kHz applications, r_G = 5–10 Ω balances switching loss and EMI; values below 5 Ω increase peak gate current and risk oscillation, while >15 Ω raises switching losses disproportionately.