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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGW40N65F5AXKSA1

Name: IGW40N65F5AXKSA1
Brand: Infineon Technologies
SKU: IGW40N65F5AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGW40N65F5AXKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGW40N65F5AXKSA1.pdf

Description:: IGBT 650V TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IGW40N65F5AXKSA1 from Infineon is a 650 V, 40 A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, optimized for hard-switching and resonant topologies. It delivers 1.6 V V_CE(sat) at 40 A and 25°C, supports 175°C maximum junction temperature, and features low gate charge (95 nC) for fast switching with reduced losses in battery chargers and DC/DC converters.

For engineers reviewing the IGW40N65F5AXKSA1 datasheet, IGW40N65F5AXKSA1 pinout, IGW40N65F5AXKSA1 application, or IGW40N65F5AXKSA1 equivalent, key selection criteria include its 650 V blocking capability, 120 A pulsed current rating, 0.60 K/W junction-to-case thermal resistance, AEC-Q101 qualification, and PG-TO247-3 package compatibility with industrial power control designs.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop architecture to achieve low conduction loss and fast switching simultaneously. Its 9 nC reverse transfer capacitance (C_res) and 2500 pF input capacitance (C_ies) enable precise gate drive control and reduced Miller effect in high-frequency operation.

The device integrates a monolithic anti-parallel diode with low reverse recovery charge, supporting efficient inductive switching at up to 175°C junction temperature. Its 13 nH internal emitter inductance is characterized for accurate layout-aware switching energy modeling under standardized test conditions (RG = 15 Ω, Lσ = 30 nH, Cσ = 30 pF).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Maximum blocking voltage for 400 V DC-link applications with 25% safety margin
I_C	40 A continuous - Rated collector current at T_C = 25°C, derates to 46 A at T_C = 100°C
V_CE(sat)	1.6 V @ 40 A, 25°C - Low saturation voltage reduces conduction loss in high-current phases
Q_G	95 nC - Enables fast turn-on/off with moderate gate driver strength (e.g., 2 A peak)
t_d(off)	165 ns typ. @ 25°C - Short turn-off delay supports >100 kHz switching in ZVS/ZCS topologies
R_th(j-c)	0.60 K/W - Allows 250 W power dissipation with ≤150°C case temperature rise
T_vj(max)	175°C - Enables high-temperature operation in compact, thermally constrained enclosures

Pinout & Package

Supplied in PG-TO247-3 package with isolated mounting screw hole and backside collector connection. Package outline conforms to JEDEC TO-247 standard with 3.8 mm creepage/clearance and 0.6 Nm M3 mounting torque specification.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring 15 V nominal drive; sensitive to ESD and transient overvoltage
Pin 2 + Backside	Collector	Main high-side power terminal; backside metal enables low-inductance high-current path
Pin 3	Emiter	Reference node for gate drive; internal 13 nH inductance affects switching waveform fidelity

Key Features

Feature	Design Value
High-speed F5 trench technology	Reduces total switching energy to 0.10 mJ @ 5 A, enabling >200 kHz operation in LLC resonant converters
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST
Low V_CE(sat) drift with temperature	Increases only 0.3 V from 25°C to 175°C, maintaining stable efficiency across thermal range
Green RoHS-compliant package	Halogen-free molding compound and lead-free plating meet IPC-J-STD-609 Class 1 requirements
PSpice models available	Includes behavioral and physics-based SPICE models for accurate system-level loss simulation

Applications

Battery Charger

DC/DC Converter

Use Scenario: On-board EV charger operating at 10–20 kW with interleaved PFC and CLLC stages.

IC Role / Device Role / Timing Role: Primary-side IGBT switch in resonant half-bridge, handling 400 V DC-link and 20 kHz–100 kHz variable frequency.

Use Value: Low Q_G and 0.10 mJ E_ts at light load reduce switching loss by 35% vs. prior-generation IGBTs.

Use Scenario: Isolated 48 V–12 V bidirectional DC/DC converter for server power distribution.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology, conducting 40 A peak current at 100 kHz.

Use Value: 175°C T_vj(max) allows 20% higher power density without forced air cooling.

Industrial Motor Drive

Renewable Energy Inverter

Use Scenario: 7.5 kW variable-frequency drive for HVAC compressors with integrated braking chopper.

IC Role / Device Role / Timing Role: Braking IGBT in regenerative energy dump circuit, switching at 5–10 kHz with 120 A pulsed current.

Use Value: 120 A I_C(puls) rating and 0.60 K/W R_th(j-c) prevent thermal runaway during short-duration overload.

Use Scenario: String-level solar inverter with 600 V PV input and transformerless design.

IC Role / Device Role / Timing Role: Main switching device in unipolar PWM inverter stage, operating at 16 kHz with soft-switching assist.

Use Value: 650 V V_CE rating provides 20% margin above 500 V string voltage, meeting IEC 62109 creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N60A3	600 V rating, 1.8 V V_CE(sat), 110 nC Q_G, TO-247 package	Limited to 400 V DC-link systems; higher conduction loss increases thermal stress in high-duty-cycle operation	Select when cost sensitivity outweighs efficiency targets and 600 V margin suffices
STMicroelectronics STGW40H65DFB	650 V rating, 1.7 V V_CE(sat), 105 nC Q_G, built-in FRD with Q_rr = 2.5 µC	Higher reverse recovery charge increases turn-off loss in ZVS circuits; requires larger snubber	Prefer for hard-switched inverters where diode performance dominates system loss budget

Compared with IXGN40N60A3 and STGW40H65DFB, IGW40N65F5AXKSA1 offers superior trade-off between 650 V robustness, 1.6 V conduction loss, and 95 nC gate charge-making it optimal for high-frequency, high-efficiency resonant converters where both switching and conduction losses must be minimized.

Availability

IGW40N65F5AXKSA1 is available at Aetrix Electronics and suitable for battery chargers, DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q101 qualified power semiconductors.

Supply support for IGW40N65F5AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor solutions, and automotive microcontrollers, with global manufacturing and R&D centers.

This part belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency industrial and automotive power conversion systems demanding low switching loss and rugged thermal performance.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 100 kHz?

For 100 kHz operation with 15 V gate drive, a 15 Ω gate resistor is validated in the datasheet for balanced switching speed and EMI control. Increasing beyond 22 Ω extends t_d(off) to >200 ns and raises E_off by 25%, risking thermal overstress in continuous conduction mode.

Does IGW40N65F5AXKSA1 include an integrated freewheeling diode?

No-it is a discrete IGBT without an integrated diode. The device relies on an external anti-parallel diode (e.g., IDH08SG60C) selected for low Q_rr and matched thermal characteristics to minimize commutation losses in bridge configurations.

Can this IGBT be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (increasing ~1.5 mV/°C from 25°C to 175°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain <5°C ΔT_vj.

What is the significance of the 'XKSA1' suffix in the part number?

The 'XKSA1' suffix denotes Infineon's standard industrial-grade packaging variant: Pb-free, halogen-free PG-TO247-3 package with tape-and-reel delivery (100 pcs/reel), marked 'G40EF5A', and qualified per industrial temperature grade (−40°C to +175°C).

IGW40N65F5AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 74 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 40A

Power - Max:: 250 W

Switching Energy:: 350µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 19ns/165ns

Test Condition:: 400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IGW40N65F5AXKSA1 FAQ

1.How can I place an order for IGW40N65F5AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW40N65F5AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW40N65F5AXKSA1 reliable?

The price and inventory of IGW40N65F5AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW40N65F5AXKSA1 is usually 5 days.

3.What payment methods are accepted for IGW40N65F5AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW40N65F5AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW40N65F5AXKSA1?

IGW40N65F5AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW40N65F5AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW40N65F5AXKSA1?

For technical support, including IGW40N65F5AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW40N65F5AXKSA1 requirements.

6.How does Aetrix verify that IGW40N65F5AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW40N65F5AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW40N65F5AXKSA1 meets industry standards.

7.What is the process for return or replacement of IGW40N65F5AXKSA1?

All IGW40N65F5AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW40N65F5AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW40N65F5AXKSA1 part is unused and in its original packaging.

Return procedure for IGW40N65F5AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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