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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGW40N65F5FKSA1

Name: IGW40N65F5FKSA1
Brand: Infineon Technologies
SKU: IGW40N65F5FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGW40N65F5FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGW40N65F5FKSA1.pdf

Description:: IGBT 650V 74A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IGW40N65F5FKSA1 from Infineon is a 650 V, 40 A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, designed for hard-switching and resonant topologies in industrial power converters. It delivers 1.6 V V_CE(sat) at 40 A and 25°C, supports 175°C maximum junction temperature, and features low gate charge (95 nC) for fast switching in solar inverters and UPS systems.

For engineers reviewing the IGW40N65F5FKSA1 datasheet, IGW40N65F5FKSA1 pinout, IGW40N65F5FKSA1 application, or IGW40N65F5FKSA1 equivalent, key selection criteria include V_CE(sat) stability across temperature, turn-off delay time (160–220 ns), E_off energy (0.03–0.16 mJ), and PG-TO247-3 thermal resistance (R_th(j-c) = 0.60 K/W).

Technical Context

This IGBT employs field-stop trench gate architecture optimized for high-frequency switching in DC-AC and DC-DC conversion stages. Its low output capacitance (C_oes = 40 pF) and reverse transfer capacitance (C_res = 9 pF) minimize Miller effect, while internal emitter inductance (13 nH) is calibrated for accurate dynamic characterization under standardized test conditions (V_CC = 400 V, I_C = 5–20 A, R_G = 15 Ω).

The device operates with gate-emitter threshold voltage (V_GE(th)) of 3.2–4.8 V and transconductance (g_fs) of 50 S, enabling robust drive margin and predictable current control. Its SOA is validated up to 1 µs pulse width at 650 V and 175°C, supporting reliable operation in welding and mid-to-high-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in boost, inverter, and PFC stages without breakdown.
I_C	40 A continuous - Rated collector current at T_C = 25°C; derates to 46 A at T_C = 100°C per thermal limits.
V_CE(sat)	1.6 V @ 40 A, 25°C - Low conduction loss enables high efficiency in 10–100 kHz switching applications.
Q_G	95 nC - Enables fast turn-on/turn-off with moderate gate driver power (e.g., 1–2 W at 50 kHz).
t_d(off)	160–220 ns - Short turn-off delay supports high-frequency operation while maintaining safe commutation margins.
E_off	0.03–0.16 mJ - Low turn-off energy reduces heat generation in hard-switched topologies like two-level inverters.
R_th(j-c)	0.60 K/W - Enables direct heatsink mounting with predictable thermal drop for thermal design.
T_vj(max)	175°C - Supports extended operation in high-ambient industrial environments with margin for transient overload.

Pinout & Package

IGW40N65F5FKSA1 is housed in a PG-TO247-3 package with isolated metal tab (collector-connected backside). The package provides low thermal resistance and mechanical robustness for high-power industrial mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ±20 V max drive; low input capacitance (C_ies = 2500 pF) eases gate driver selection.
Pin 2 & Backside	Collector	Main high-side power terminal; electrically connected to metal tab for direct heatsink attachment and low-inductance layout.
Pin 3	Emitter	Power return path; internal emitter inductance (13 nH) impacts switching waveform fidelity and snubber design.

Key Features

Feature	Design Value
Low V_CE(sat) with temperature stability	1.6 V @ 25°C rising to 1.9 V @ 175°C - Minimizes conduction loss drift across operating range.
Optimized for SiC diode pairing	Fast fall time (10–16 ns) and low tail current - Reduces reverse recovery losses when used with SiC Schottky diodes in boost converters.
JEDEC-qualified reliability	Qualified per JESD47 - Ensures long-term performance in industrial power control applications with thermal cycling and humidity exposure.
Pb-free and RoHS-compliant	Lead-free plating on all terminals - Meets global environmental compliance requirements for commercial and industrial equipment.
PSpice models available	Verified behavioral SPICE model on Infineon website - Enables accurate simulation of switching waveforms and loss estimation before prototyping.

Applications

Solar Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase string inverters converting PV DC output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in inverter bridge legs, operating at 16–20 kHz with sinusoidal PWM.

Use Value: Low E_off (0.03–0.16 mJ) and stable V_CE(sat) reduce thermal stress during partial-load operation and improve system efficiency >98.5%.

Use Scenario: Online double-conversion UPS delivering clean sine-wave output during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow between battery bank and AC output.

Use Value: 175°C T_vj(max) and robust SOA support continuous 100% load operation with minimal derating in enclosed cabinets.

Welding Converters

Mid-Frequency SMPS

Use Scenario: IGBT-based inverter welders generating 1–5 kHz square-wave output for arc stability.

IC Role / Device Role / Timing Role: Primary switching element in full-bridge topology driving high-current transformer primary.

Use Value: Fast rise/fall times (4–13 ns) and low C_res (9 pF) suppress voltage overshoot during rapid current transitions, reducing snubber losses.

Use Scenario: Industrial 30–100 kHz switched-mode power supplies for PLCs, motor drives, and instrumentation.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge or LLC resonant converter primary side.

Use Value: Low Q_G (95 nC) and high g_fs (50 S) enable precise duty-cycle control and reduced gate drive loss at elevated frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IGP40N65F5	Same die, PG-TO220-3 package; R_th(j-c) = 0.60 K/W but higher R_th(j-a) (62 K/W vs. 40 K/W); L_E = 7 nH	Lower power density; limited to <100 W continuous dissipation without forced cooling	Select when cost-sensitive, lower-power, or PCB-mount-only designs preclude TO247 footprint.
IKW40N65ES5	Enhanced speed variant: t_f = 8 ns (vs. 10–16 ns), E_off = 0.025 mJ (vs. 0.03–0.16 mJ); same V_CE/I_C/T_vj(max)	Better suited for >50 kHz resonant topologies where switching loss dominates conduction loss	Select when optimizing for ultra-low E_off in ZVS/ZCS circuits, accepting slightly higher V_CE(sat) (1.65 V typ).

Compared with IGP40N65F5 and IKW40N65ES5, IGW40N65F5FKSA1 offers the optimal balance of thermal capability (TO247 package), proven hard-switching performance (E_ts = 0.10–0.66 mJ), and broad industrial qualification-making it preferred for medium-to-high power UPS and solar inverters requiring long-term reliability and heatsink-integrated mounting.

Availability

IGW40N65F5FKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IGW40N65F5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-reliability industrial power conversion in solar, UPS, and welding applications where switching frequency, thermal robustness, and system-level efficiency are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G(on) = R_G(off) = 15 Ω for standardized switching tests. For reliable operation, R_G should not exceed 22 Ω to maintain t_d(off) ≤ 220 ns and prevent excessive E_off increase. Lower values (10–15 Ω) are advised for >30 kHz operation to limit dv/dt-induced false turn-on.

Does IGW40N65F5FKSA1 include an integrated anti-parallel diode?

No. IGW40N65F5FKSA1 is a discrete IGBT without an integrated freewheeling diode. External diode selection-particularly SiC Schottky diodes-is required for inductive load applications. The device's low tail current and fast fall time make it highly compatible with SiC diodes to minimize reverse recovery losses.

How does thermal resistance differ between IGW40N65F5FKSA1 and IGP40N65F5?

Both share identical R_th(j-c) = 0.60 K/W, but IGW40N65F5FKSA1 (PG-TO247-3) has R_th(j-a) = 40 K/W versus IGP40N65F5's 62 K/W (PG-TO220-3). This 35% improvement in ambient thermal resistance allows ~25% higher continuous power dissipation in natural convection, making IGW40N65F5FKSA1 preferable for compact, high-power industrial enclosures.

Is this part suitable for use in automotive applications?

No. IGW40N65F5FKSA1 is qualified per JEDEC standards for industrial applications only-not AEC-Q101. It lacks automotive-specific screening (e.g., HTOL, UHAST, vibration testing) and is not rated for under-hood temperature extremes or automotive EMI requirements. Use Infineon's Automotive IGBT portfolio (e.g., AIKxx series) for vehicle applications.

IGW40N65F5FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 74 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 40A

Power - Max:: 255 W

Switching Energy:: 360µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 19ns/160ns

Test Condition:: 400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IGW40N65F5FKSA1 FAQ

1.How can I place an order for IGW40N65F5FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW40N65F5FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW40N65F5FKSA1 reliable?

The price and inventory of IGW40N65F5FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW40N65F5FKSA1 is usually 5 days.

3.What payment methods are accepted for IGW40N65F5FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW40N65F5FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW40N65F5FKSA1?

IGW40N65F5FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW40N65F5FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW40N65F5FKSA1?

For technical support, including IGW40N65F5FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW40N65F5FKSA1 requirements.

6.How does Aetrix verify that IGW40N65F5FKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW40N65F5FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW40N65F5FKSA1 meets industry standards.

7.What is the process for return or replacement of IGW40N65F5FKSA1?

All IGW40N65F5FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW40N65F5FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW40N65F5FKSA1 part is unused and in its original packaging.

Return procedure for IGW40N65F5FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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