Infineon Technologies IGW50N60TFKSA1

Overview

IGW50N60TFKSA1 from Infineon is a 600 V, 50 A low-loss TRENCHSTOP™ IGBT with Fieldstop technology, designed for high-efficiency switching in frequency converters and uninterruptible power supplies. It delivers 1.5 V typical V_CE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time under V_GE = 15 V and V_CC ≤ 400 V.

For engineers reviewing the IGW50N60TFKSA1 datasheet, IGW50N60TFKSA1 pinout, IGW50N60TFKSA1 application, or IGW50N60TFKSA1 equivalent, key selection criteria include its tight parameter distribution, positive V_CE(sat) temperature coefficient, low gate charge (310 nC), and robust SOA up to 600 V with 150 A pulsed current capability.

Technical Context

This IGBT integrates TRENCHSTOP™ and Fieldstop technologies to achieve simultaneous low conduction loss and high switching speed. Its 0.45 K/W junction-to-case thermal resistance supports high-power density designs, while the 93 pF reverse transfer capacitance (C_rss) and 3140 pF input capacitance (C_iss) enable predictable gate drive design at 1 MHz test frequency.

The device features a positive temperature coefficient in V_CE(sat), enabling inherent current sharing in parallel configurations. Its 1.4 mJ typical turn-off energy at 25°C and 1.8 mJ at 175°C reflects stable dynamic performance across industrial temperature ranges, validated under inductive load conditions with 7 Ω gate resistor and 400 V bus voltage.

Key Specifications

Pinout & Package

IGW50N60TFKSA1 uses the PG-TO247-3 package: a through-hole, isolated-tab, 3-terminal power package with 2.54 mm lead pitch and 15.8 mm body height. The case is electrically connected to the collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKW50N60T and FGH50N60SMD, IGW50N60TFKSA1 offers the lowest V_CE(sat) and longest short-circuit withstand time among 600 V/50 A IGBTs, making it optimal for high-reliability, high-efficiency UPS and converter designs where thermal margin and fault robustness are critical.

Availability

IGW50N60TFKSA1 is available at Aetrix Electronics and suitable for frequency converters, uninterruptible power supplies, and solar inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IGW50N60TFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IGW50N60TFKSA1 belongs to the TRENCHSTOP™ IGBT series, engineered specifically for high-efficiency, high-ruggedness 600 V switching in industrial motor drives and power conditioning systems.

FAQ

What is the maximum allowable gate-emitter voltage for IGW50N60TFKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller coupling. Gate drive circuits must limit transient overshoot to within this envelope during switching transitions.

Does IGW50N60TFKSA1 include an integrated freewheeling diode?

No, IGW50N60TFKSA1 is a single-die IGBT without an integrated diode. It requires an external ultrafast recovery diode (e.g., IDH08SG60C) in inductive load applications. This configuration allows independent optimization of diode recovery characteristics and thermal management, unlike co-packed alternatives such as IKW50N60T.

How does junction temperature affect V_CE(sat) in IGW50N60TFKSA1?

V_CE(sat) exhibits a positive temperature coefficient: it rises from 1.5 V at 25°C to 1.9 V at 175°C under 50 A. This behavior improves current sharing in parallel configurations and provides inherent thermal stability, reducing risk of thermal runaway during overload conditions.

What is the safe operating area (SOA) limitation at 175°C junction temperature?

At T_j = 175°C, the DC SOA is limited to 50 A at V_CE = 10 V and narrows to 10 A at V_CE = 400 V. For pulse operation (t_p ≤ 10 ms), the SOA extends to 90 A at 100 V and 40 A at 400 V, as defined in Figure 2 of the datasheet. Derating curves must be applied for continuous operation above 100°C case temperature.