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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGW50N60TPXKSA1

Name: IGW50N60TPXKSA1
Brand: Infineon Technologies
SKU: IGW50N60TPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGW50N60TPXKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGW50N60TPXKSA1.pdf

Description:: IGBT TRENCH/FS 600V 80A TO247-3

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Product details

Overview

IGW50N60TPXKSA1 from Infineon is a 600V, 50A TRENCHSTOP™ Performance-series IGBT in PG-TO247-3 package, featuring 1.6V V_CE(sat) at 25°C and 175°C maximum junction temperature. It delivers low turn-off losses (0.85 mJ), short tail current, and high-speed switching (t_d(off) = 215 ns) for medium-frequency industrial power conversion.

For engineers reviewing the IGW50N60TPXKSA1 datasheet, IGW50N60TPXKSA1 pinout, IGW50N60TPXKSA1 application, or IGW50N60TPXKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, short-circuit withstand time (5 µs), gate charge (249 nC), thermal resistance (0.36 K/W j-c), and SOA compliance up to 600V/150A pulsed.

Technical Context

This IGBT employs Trench + Fieldstop architecture to simultaneously minimize conduction loss and switching loss. Its optimized carrier lifetime control reduces tail current while maintaining robust short-circuit ruggedness (5 µs at 150°C) and high dv/dt immunity.

The device integrates a monolithic emitter structure with low internal emitter inductance (13 nH) and uses Pb-free plating compliant with RoHS. Gate threshold voltage (4.1–5.7 V) ensures stable turn-on margin across temperature and process variation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - supports DC bus voltages up to 400 V in 3-phase inverters with 50% safety margin
I_C	50 A continuous - rated for sustained conduction at TC = 25°C with derating above 100°C
V_CE(sat)	1.6 V @ 25°C, 1.94 V @ 175°C - enables <1.2 W conduction loss at 50 A, critical for thermal management
E_off	0.85 mJ @ 25°C - low turn-off energy reduces heatsink requirements in 8–20 kHz converters
R_th(j-c)	0.36 K/W typ - allows 319 W dissipation at ΔT = 115 K (175°C – 25°C case), enabling compact mounting
t_SC	5 µs @ 150°C - defines minimum fault-clearing window for protection circuitry design
Q_G	249 nC - determines gate driver peak current requirement (~35 mA avg. for 7 Ω RG at 15 V)

Pinout & Package

Package: PG-TO247-3 (standard 3-pin through-hole IGBT outline with isolated tab). Pin assignment verified per Infineon package drawing PG-TO247-3 rev. 2015-04.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	High-side power output node	Connected to DC+ rail; carries full load current and must be routed with low-inductance layout
Gate (G)	Control input terminal	Requires low-impedance drive path; sensitive to noise due to 5.1 V typical V_GE(th)
Emitter (E)	Power return and reference node	Serves as source of gate drive return; internal 13 nH inductance impacts switching waveform fidelity

Key Features

Feature	Design Value
Trench + Fieldstop structure	Enables simultaneous optimization of V_CE(sat) and E_off, reducing total loss by >15% vs planar IGBTs at 10 kHz
175°C max junction temperature	Supports operation in high-ambient environments (e.g., enclosed solar inverters) without forced cooling derating
Low EMI signature	Short tail current and controlled dv/dt reduce filter component count and EMI filter size in EMC-compliant designs
JEDEC-qualified reliability	Validated for industrial power control applications per JESD47, ensuring >10-year field life under thermal cycling stress

Applications

Industrial Motor Drives

Solar Inverters

Use Scenario: 3-phase VFDs operating at 4–16 kHz switching frequency with 400 V DC link.

IC Role / Device Role / Timing Role: Main inverter switch handling 50 A RMS output current with precise PWM timing control.

Use Value: 1.6 V V_CE(sat) minimizes conduction loss at partial load, improving efficiency across torque range.

Use Scenario: String inverters converting 600 V PV array output to 230 V AC grid.

IC Role / Device Role / Timing Role: DC-link switching element in two-level NPC topology with unidirectional current flow.

Use Value: 5 µs short-circuit withstand time enables fast fault response without desaturation circuit complexity.

UPS Systems

Medium-Frequency Converters

Use Scenario: Online double-conversion UPS with bidirectional IGBT bridge and 10 kHz PWM.

IC Role / Device Role / Timing Role: Inverter-stage switch managing battery-to-AC conversion with zero-voltage switching assist.

Use Value: Low 249 nC gate charge reduces gate driver power consumption and thermal load in compact chassis.

Use Scenario: Induction heating supplies operating at 15–30 kHz with resonant LLC topology.

IC Role / Device Role / Timing Role: Half-bridge switch controlling resonant tank current with tight dead-time control.

Use Value: Stable 215 ns t_d(off) at 25°C and 277 ns at 175°C enables predictable timing margins across thermal range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N60TPXKSA1	Includes co-packaged ultrafast diode (IKW50N60DTP); higher V_F (1.7 V) but lower reverse recovery Q_rr	Preferred where integrated freewheeling path eliminates external diode layout and parasitic inductance	Select when diode integration simplifies BOM and improves EMI over discrete IGBT+diode solutions
IGW40N60TPXKSA1	Lower I_C rating (40 A), identical V_CE/V_CE(sat)/t_SC, reduced Q_G (195 nC)	Better suited for space-constrained 30–40 A designs with tighter gate drive current budgets	Choose for cost-optimized 40 A systems where 10 A headroom is acceptable and gate drive power is critical

Compared with IKW50N60TPXKSA1, IGW50N60TPXKSA1 offers higher current capability without diode integration-ideal for discrete diode selection flexibility. Versus IGW40N60TPXKSA1, it provides 10 A extra headroom and higher P_tot, supporting longer overload durations in motor drives.

Availability

IGW50N60TPXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, uninterruptible power supplies, and medium-frequency converters requiring stable component supply and long-term production continuity.

Supply support for IGW50N60TPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ Performance series targets high-efficiency, medium-switching-frequency power conversion, emphasizing ruggedness, thermal performance, and system-level EMI reduction in industrial inverters and UPS systems.

FAQ

What is the maximum allowable gate-emitter voltage for IGW50N60TPXKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation beyond ±15 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent spurious turn-on during high dv/dt events.

Does IGW50N60TPXKSA1 include an integrated freewheeling diode?

No. IGW50N60TPXKSA1 is a standalone IGBT without an integrated diode. It requires an external ultrafast or SiC Schottky diode for freewheeling paths. For integrated-diode alternatives, consider IKW50N60TPXKSA1, which pairs this IGBT die with a matched 50 A ultrafast diode in the same TO247 package.

How does junction temperature affect V_CE(sat) in IGW50N60TPXKSA1?

V_CE(sat) increases linearly with junction temperature: from 1.60 V at 25°C to 1.94 V at 175°C (typical). This positive temperature coefficient enables inherent current sharing in parallel configurations and simplifies thermal runaway mitigation in multi-device designs.

What is the recommended gate resistor value for standard 15 V gate drive?

Infineon specifies R_G(on) = R_G(off) = 7.0 Ω for characterization (E_on/E_off data). For practical designs, 5–10 Ω is typical: lower values (5 Ω) improve switching speed but increase EMI; higher values (10 Ω) reduce dv/dt stress and ringing at the expense of increased switching loss.

IGW50N60TPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 50A

Power - Max:: 319.2 W

Switching Energy:: 1.53mJ (on), 850µJ (off)

Input Type:: Standard

Gate Charge:: 249 nC

Td (on/off) @ 25°C:: 20ns/215ns

Test Condition:: 400V, 50A, 7Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IGW50N60TPXKSA1 FAQ

1.How can I place an order for IGW50N60TPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW50N60TPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW50N60TPXKSA1 reliable?

The price and inventory of IGW50N60TPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW50N60TPXKSA1 is usually 5 days.

3.What payment methods are accepted for IGW50N60TPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW50N60TPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW50N60TPXKSA1?

IGW50N60TPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW50N60TPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW50N60TPXKSA1?

For technical support, including IGW50N60TPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW50N60TPXKSA1 requirements.

6.How does Aetrix verify that IGW50N60TPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW50N60TPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW50N60TPXKSA1 meets industry standards.

7.What is the process for return or replacement of IGW50N60TPXKSA1?

All IGW50N60TPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW50N60TPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW50N60TPXKSA1 part is unused and in its original packaging.

Return procedure for IGW50N60TPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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