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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGW50N65F5AXKSA1

Name: IGW50N65F5AXKSA1
Brand: Infineon Technologies
SKU: IGW50N65F5AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGW50N65F5AXKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGW50N65F5AXKSA1.pdf

Description:: IGBT 650V TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IGW50N65F5AXKSA1 from Infineon is a 650 V, 50 A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, optimized for hard-switching and resonant topologies in industrial power conversion. It delivers 1.66 V V_CE(sat) at 25°C, 108 nC gate charge, and operates up to 175°C junction temperature. Used in battery chargers and DC/DC converters requiring fast switching and low conduction loss.

For engineers reviewing the IGW50N65F5AXKSA1 datasheet, IGW50N65F5AXKSA1 pinout, IGW50N65F5AXKSA1 application, or IGW50N65F5AXKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, turn-off delay (156 ns typ. at 25°C), E_off energy (0.14 mJ), thermal resistance R_th(j–c) = 0.55 K/W, and AEC-Q101 qualification for ruggedized operation.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop architecture to simultaneously reduce conduction and switching losses. Its low Q_G (108 nC) and minimized C_res (11 pF) enable fast, controllable turn-on/turn-off with reduced gate drive power demand.

The device integrates a monolithic anti-parallel diode with soft recovery characteristics, supporting efficient inductive load switching. Thermal design is enabled by its low R_th(j–c) and backside collector metal, allowing direct heatsink mounting for high-power density layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in industrial SMPS and motor drives.
I_C	50 A continuous - Rated collector current at T_C = 25°C; derates to 53.5 A at T_C = 100°C.
V_CE(sat)	1.66 V @ 25°C - Low saturation voltage reduces conduction loss and improves efficiency in high-current stages.
Q_G	108 nC - Enables fast, low-loss switching with moderate gate driver capability (e.g., 1–2 A peak).
t_d(off)	156 ns typ. @ 25°C - Short turn-off delay supports high-frequency operation up to ~100 kHz in hard-switched converters.
R_th(j–c)	0.55 K/W - Allows direct thermal coupling to heatsink; enables compact thermal design with <120 W dissipation at T_C = 100°C.
T_vj(max)	175°C - Supports extended operation in high-ambient environments without derating penalties typical of 150°C-rated devices.

Pinout & Package

IGW50N65F5AXKSA1 uses the PG-TO247-3 package with isolated mounting screw hole and backside collector terminal for low-inductance heatsink connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input; requires 15 V nominal drive; ±20 V max transient rating ensures robustness against ringing.
Pin 2 & Backside	Collector	Main high-side power terminal; backside metal enables low-inductance, high-current path to heatsink.
Pin 3	Emitter	Power return path; referenced to gate drive ground; layout must minimize L_E (13 nH internal) to suppress voltage overshoot.

Key Features

Feature	Design Value
High-speed TRENCHSTOP™ 5 technology	Reduces total switching energy (E_ts = 0.63 mJ @ 25°C) while maintaining low V_CE(sat), enabling higher efficiency in 40–100 kHz converters.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS testing-supports industrial applications demanding long-term robustness.
Green RoHS-compliant package	PG-TO247-3 housing meets EU RoHS Directive 2011/65/EU and halogen-free material requirements for eco-conscious manufacturing.
Monolithic anti-parallel diode	Integrated soft-recovery diode eliminates need for external freewheeling diode in half-bridge configurations, reducing BOM count and layout area.

Applications

Battery Charger

DC/DC Converter

Use Scenario: On-board EV charger and industrial AC/DC front-end modules converting 400 V DC bus to 400–800 V intermediate bus.

IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC topology operating at 50–80 kHz.

Use Value: Low E_off (0.14 mJ) and stable V_CE(sat) across –40°C to 175°C ensure consistent efficiency and thermal margin under variable load and ambient conditions.

Use Scenario: Isolated bidirectional DC/DC stage in energy storage systems and telecom rectifiers.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge (PSFB) topology with ZVS-assisted turn-on.

Use Value: Low C_res (11 pF) and fast t_f (6 ns) support reliable zero-voltage switching across wide load range, minimizing switching loss and EMI.

Industrial Motor Drive

UPS Inverter Stage

Use Scenario: 3-phase inverter for HVAC compressors and pump drives rated up to 15 kW.

IC Role / Device Role / Timing Role: Half-bridge leg switch in 650 V IGBT module replacement configuration.

Use Value: 175°C T_vj(max) and 0.55 K/W R_th(j–c) allow sustained 50 A output with minimal heatsink volume, improving system power density.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 V AC from 400–600 V DC bus.

IC Role / Device Role / Timing Role: Output bridge switch operating in 16–20 kHz PWM with sinusoidal modulation.

Use Value: Soft-switching compatibility and low tail current reduce harmonic distortion and thermal stress during overload transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60A3	600 V rating, higher V_CE(sat) (1.8 V), slower t_d(off) (220 ns), no AEC-Q101 qualification	Suitable for lower-voltage 400 V bus systems; less suited for 650 V designs or automotive-adjacent industrial use	Select when cost sensitivity outweighs 50 V headroom and AEC-Q101 compliance needs.
STMicroelectronics STGW50H65DFB	Same 650 V/50 A rating, higher E_off (0.21 mJ), larger R_th(j–c) (0.65 K/W), no integrated diode	Requires external diode; higher thermal resistance limits power density in compact enclosures	Prefer where diode independence or legacy ST ecosystem integration is prioritized over lowest loss.

Compared with IXGN50N60A3 and STGW50H65DFB, IGW50N65F5AXKSA1 offers superior switching efficiency (0.14 mJ E_off vs. ≥0.21 mJ), tighter thermal management (0.55 K/W), and automotive-grade reliability-making it optimal for space-constrained, high-efficiency 650 V industrial converters.

Availability

IGW50N65F5AXKSA1 is available at Aetrix Electronics and suitable for battery chargers, DC/DC converters, and industrial motor drives requiring stable component supply, long-lifecycle assurance, and AEC-Q101-qualified ruggedness.

Supply support for IGW50N65F5AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency industrial power conversion where low switching loss and thermal resilience are critical.

FAQ

What is the maximum gate-emitter voltage rating for IGW50N65F5AXKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift. Gate drive circuits must include clamping (e.g., Zener diodes) to maintain safe operation under switching transients and layout inductance.

Does IGW50N65F5AXKSA1 include an integrated freewheeling diode?

Yes, IGW50N65F5AXKSA1 integrates a monolithic anti-parallel diode with soft reverse recovery characteristics. This eliminates the need for an external diode in half-bridge or inverter leg configurations, reducing PCB area and parasitic inductance. The diode shares the same thermal path and junction temperature as the IGBT die.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases with junction temperature: 1.66 V at 25°C, 1.90 V at 125°C, and 2.03 V at 175°C. This positive temperature coefficient provides inherent current-sharing stability in parallel configurations. Designers must account for this rise when calculating conduction loss and thermal margin at full-load operating temperature.

Is IGW50N65F5AXKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes-its low reverse transfer capacitance (C_res = 11 pF) and fast fall time (t_f = 6 ns) support reliable ZVS in phase-shifted full-bridge and LLC resonant converters. The low E_off (0.14 mJ) and controlled tail current further reduce switching loss during resonant transitions, especially at elevated temperatures.

IGW50N65F5AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 270 W

Switching Energy:: 490µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 108 nC

Td (on/off) @ 25°C:: 21ns/156ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IGW50N65F5AXKSA1 FAQ

1.How can I place an order for IGW50N65F5AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW50N65F5AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW50N65F5AXKSA1 reliable?

The price and inventory of IGW50N65F5AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW50N65F5AXKSA1 is usually 5 days.

3.What payment methods are accepted for IGW50N65F5AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW50N65F5AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW50N65F5AXKSA1?

IGW50N65F5AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW50N65F5AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW50N65F5AXKSA1?

For technical support, including IGW50N65F5AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW50N65F5AXKSA1 requirements.

6.How does Aetrix verify that IGW50N65F5AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW50N65F5AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW50N65F5AXKSA1 meets industry standards.

7.What is the process for return or replacement of IGW50N65F5AXKSA1?

All IGW50N65F5AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW50N65F5AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW50N65F5AXKSA1 part is unused and in its original packaging.

Return procedure for IGW50N65F5AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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