Infineon Technologies IGW50N65F5FKSA1

Overview

IGW50N65F5FKSA1 from Infineon is a 650 V, 50 A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, designed for hard-switching and resonant topologies in industrial power converters. It delivers 1.6 V V_CE(sat) at 50 A and 25°C, supports 175°C maximum junction temperature, and features low gate charge (120 nC) for reduced switching losses in solar inverters and UPS systems.

For engineers reviewing the IGW50N65F5FKSA1 datasheet, IGW50N65F5FKSA1 pinout, IGW50N65F5FKSA1 application, or IGW50N65F5FKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, turn-off delay time (175 ns typ. at 25°C), E_off energy (0.16 mJ), and compatibility with SiC Schottky diodes in boost stages.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop architecture to minimize conduction and switching losses simultaneously. Its optimized carrier lifetime control enables fast turn-off (t_d(off) = 175 ns, t_f = 18 ns) while maintaining low V_CE(sat) drift across −40°C to +175°C operation.

The device integrates low-output capacitance (C_oes = 50 pF) and ultra-low reverse transfer capacitance (C_res = 11 pF), reducing Miller effect and enabling stable gate drive at >100 kHz switching frequencies in mid-to-high-frequency converters.

Key Specifications

Pinout & Package

IGW50N65F5FKSA1 uses the PG-TO247-3 package with isolated mounting screw hole and backside collector thermal pad. The TO-247 outline provides robust mechanical stability and low thermal resistance (R_th(j-c) = 0.50 K/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT applications.

Compared with IXGN50N60B3 and STGW50H65DFB, IGW50N65F5FKSA1 offers superior hard-switching efficiency (0.65 mJ E_ts vs. ≥0.82 mJ), tighter V_CE(sat) tolerance (±0.1 V), and extended 175°C operation-critical for compact, high-power-density industrial converters.

Availability

IGW50N65F5FKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IGW50N65F5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IGW50N65F5FKSA1 belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, medium-frequency power conversion in solar, UPS, and industrial motor drives.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 12 Ω for test conditions yielding 175 ns t_d(off) and 18 ns t_f. For 20 kHz operation with 1 A peak gate driver, R_G ≤ 15 Ω maintains safe dv/dt control while limiting overshoot. Higher values increase switching time and E_on/E_off, especially above 100 kHz.

Does IGW50N65F5FKSA1 include an integrated anti-parallel diode?

No. IGW50N65F5FKSA1 is a discrete IGBT die in a 3-pin TO-247 package with no monolithically integrated freewheeling diode. External diode selection-especially SiC Schottky types-is required for inductive load commutation and must be matched to its 175°C thermal rating and low reverse recovery requirements.

How does V_CE(sat) vary with junction temperature?

V_CE(sat) increases linearly with temperature: 1.60 V at 25°C, 1.80 V at 125°C, and 1.90 V at 175°C (typical). This positive temperature coefficient enables inherent current sharing in parallel configurations and simplifies thermal runaway protection design.

Is the PG-TO247-3 package lead-free and RoHS compliant?

Yes. IGW50N65F5FKSA1 uses Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The "KSA1" suffix denotes Infineon's standard RoHS-compliant, halogen-free, and green-packaged variant with qualified reflow profile up to 260°C for 10 seconds.