Infineon Technologies IGW50N65H5AXKSA1

Overview

IGW50N65H5AXKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT optimized for hard-switching and resonant topologies in industrial power conversion. It delivers 1.66 V V_CE(sat) at 25°C, 116 nC gate charge, and 175°C maximum junction temperature, with RoHS-compliant PG-TO247-3 packaging. It is qualified per AEC-Q101 and used in battery chargers and DC/DC converters.

For engineers reviewing the IGW50N65H5AXKSA1 datasheet, IGW50N65H5AXKSA1 pinout, IGW50N65H5AXKSA1 application, or IGW50N65H5AXKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, switching energy (E_on/E_off) at 25 A and 6 A loads, thermal resistance (R_th(j-c) = 0.55 K/W), and gate drive robustness under ±20 V transient conditions.

Technical Context

This IGBT employs Infineon's fifth-generation TRENCHSTOP™ trench-gate field-stop structure, enabling low conduction loss while maintaining fast turn-off. Its dynamic performance is characterized by 173 ns typical t_d(off) and 11 ns t_f at 25°C/25 A, with E_off = 0.16 mJ under standardized inductive test conditions.

The device integrates a monolithic anti-parallel diode with low reverse recovery charge, supporting ZVS and LLC resonant operation. Its 13 nH internal emitter inductance and 2800 pF C_ies are tightly controlled to ensure predictable gate drive behavior and EMI performance in high-frequency SMPS designs.

Key Specifications

Pinout & Package

IGW50N65H5AXKSA1 uses the PG-TO247-3 package: insulated plastic case with three leads and electrically isolated backside collector terminal. Mounting torque: 0.6 Nm (M3 screw). Not recommended for surface-mount assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IXGN50N60A3 and STGW50H65DFB2, IGW50N65H5AXKSA1 offers superior switching efficiency (lower E_ts), tighter thermal resistance, and automotive-grade qualification-making it optimal for next-gen industrial power supplies requiring both density and reliability.

Availability

IGW50N65H5AXKSA1 is available at Aetrix Electronics and suitable for battery chargers, industrial DC/DC converters, and UPS inverter stages requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for IGW50N65H5AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IGW50N65H5AXKSA1 belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency industrial power conversion-including PFC, DC/DC, and motor drives-where low switching loss and thermal robustness are critical.

FAQ

What is the maximum allowable gate-emitter voltage for IGW50N65H5AXKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs (duty cycle <1%). Exceeding these values risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to enforce this limit during switching transients or fault events.

Does IGW50N65H5AXKSA1 include an integrated freewheeling diode?

No-it is a discrete IGBT die in a 3-pin TO247 package with separate collector, gate, and emitter terminals. The device does not integrate a freewheeling diode; external anti-parallel diodes (e.g., ultrafast Si or SiC Schottky) must be used in bridge configurations to handle inductive current recirculation.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases linearly with junction temperature: from 1.66 V at 25°C to 2.04 V at 175°C (per Fig. 6 in datasheet Rev. 2.1). This positive temperature coefficient supports inherent current sharing in paralleled devices and prevents thermal runaway under balanced bias conditions.

Can IGW50N65H5AXKSA1 be used in zero-voltage switching (ZVS) topologies?

Yes-its low C_res (11 pF), fast t_d(off) (173 ns), and low E_off (0.16 mJ) make it well-suited for ZVS and resonant LLC topologies. However, proper snubber design and gate timing must account for its 13 nH internal emitter inductance to avoid oscillation during turn-on transitions.