Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGW50N65H5FKSA1

Name: IGW50N65H5FKSA1
Brand: Infineon Technologies
SKU: IGW50N65H5FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IGW50N65H5FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGW50N65H5FKSA1.pdf

Description:: IGBT 650V 80A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,785

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IGW50N65H5FKSA1 from Infineon is a 650 V, 50 A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, optimized for hard-switching and resonant topologies in industrial power converters. It delivers 1.65 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and low 120 nC total gate charge, enabling efficient mid-to-high-frequency switching in UPS, solar inverters, and welding equipment.

For engineers reviewing the IGW50N65H5FKSA1 datasheet, IGW50N65H5FKSA1 pinout, IGW50N65H5FKSA1 application, or IGW50N65H5FKSA1 equivalent, key selection criteria include V_CE(sat) stability across temperature, turn-off energy (0.18 mJ at 25°C), thermal resistance (0.50 K/W j-c), and PG-TO247-3 mechanical compatibility with standard heatsink mounting.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop architecture to reduce conduction and switching losses simultaneously. Its low Q_G (120 nC) and fast switching times-td(off) = 180 ns, tf = 18 ns at 25°C-support operation up to 50 kHz in hard-switched PFC and inverter stages without excessive gate drive loss.

The device integrates a co-packaged anti-parallel diode with soft recovery characteristics, and its 0.50 K/W junction-to-case thermal resistance enables reliable 50 A continuous conduction at T_C = 100°C. JEDEC qualification ensures robustness in industrial environments with thermal cycling and humidity exposure.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in three-phase rectifier-fed inverters and solar string inputs.
I_C	50 A - Rated continuous collector current at T_C = 25°C; derates to 56 A at T_C = 100°C per thermal limits.
V_CE(sat)	1.65 V @ 25°C - Low saturation voltage reduces conduction loss by ~15% vs. prior-gen H3 devices at same current.
Q_G	120 nC - Enables fast, low-loss gate driving with standard ±15 V drivers and moderate R_G (12 Ω).
t_d(off)	180 ns @ 25°C - Short turn-off delay supports precise PWM timing control in digital-controlled inverters.
E_off	0.18 mJ @ 25°C - Low turn-off energy minimizes heat generation during high-frequency switching cycles.
R_th(j–c)	0.50 K/W - Allows direct mounting to heatsinks with predictable thermal interface resistance for thermal design.

Pinout & Package

IGW50N65H5FKSA1 uses the PG-TO247-3 package: insulated plastic case with 3 leads and electrically isolated backside collector terminal. Mounting screw (M3) torque limited to 0.6 Nm; soldering temperature rated to 260°C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input requiring ±20 V max; low 120 nC Q_G enables fast, low-power switching transitions.
Pin 2 & Backside	Collector	Main high-side power terminal; backside metal pad provides low-inductance, high-current path to heatsink/PCB ground plane.
Pin 3	Emitter	Power return path; internal emitter inductance measured at 13 nH (5 mm from case), critical for snubberless layout.

Key Features

Feature	Design Value
Best-in-class efficiency in hard switching	Combines 1.65 V V_CE(sat) and 0.18 mJ E_off to achieve >98.5% efficiency in 15–30 kHz PFC stages.
Plug-and-play replacement of previous generations	Pins, footprint, and gate drive requirements match IGW50N65H3/H4, enabling drop-in upgrade without layout change.
175°C maximum junction temperature	Enables higher power density designs with reduced heatsink size or extended lifetime at elevated ambient temperatures.
JEDEC-qualified reliability	Validated for industrial power applications including 1000-cycle thermal shock and 1000-hr HTRB testing.
Pb-free and RoHS compliant	Meets EU RoHS Directive 2011/65/EU and Infineon's green packaging standards for global manufacturing.

Applications

Uninterruptible Power Supplies (UPS)

Solar Inverters

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz output under grid disturbance or outage.

IC Role / Device Role / Timing Role: High-side IGBT in 3-level NPC inverter stage switching at 16–20 kHz with precise dead-time control.

Use Value: Low V_CE(sat) and stable E_off across temperature ensure consistent efficiency and thermal margin during sustained overload conditions.

Use Scenario: Central or string inverter converting DC from photovoltaic arrays into grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in boost PFC and H-bridge inverter stages operating at 20–50 kHz.

Use Value: Fast td(off)/tf and low Q_G enable high-frequency modulation without excessive gate driver loss or EMI filter burden.

Welding Converters

Mid-to-High Frequency SMPS

Use Scenario: Inverter-based arc welding equipment requiring rapid current regulation and dynamic response.

IC Role / Device Role / Timing Role: Primary switch in resonant LLC or phase-shifted full-bridge topology operating at 30–100 kHz.

Use Value: Soft-recovery co-packaged diode and low tail current minimize voltage overshoot and snubber losses during zero-voltage switching transitions.

Use Scenario: Industrial-grade switched-mode power supplies for automation controllers and PLCs.

IC Role / Device Role / Timing Role: Main power switch in forward or half-bridge topology delivering regulated 24/48 V outputs at 50–100 kHz.

Use Value: 175°C T_vj(max) and 0.50 K/W R_th(j–c) support compact, fanless designs with >10-year operational life at 60°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IGW40N65H5	40 A rated current, identical V_CE, V_CE(sat), and Q_G; lower I_C rating reduces conduction loss margin but maintains same switching performance.	Better suited for 3–5 kW systems where peak current stays below 40 A; requires re-evaluation of thermal design due to lower P_tot.	Select when system peak load is ≤40 A and board space or cost optimization is prioritized over headroom.
IKW40N65ES5	650 V, 40 A, but uses Enhanced Speed technology with lower E_off (0.12 mJ) and higher V_CE(sat) (1.75 V); different pinout (PG-TO247-4 with Kelvin emitter).	Requires PCB redesign for 4-pin layout and separate Kelvin emitter routing; optimized for ultra-low-loss <20 kHz applications.	Choose only if switching frequency is <20 kHz and Kelvin sensing is implemented; not pin-compatible.

Compared with IGW40N65H5 and IKW40N65ES5, IGW50N65H5FKSA1 offers superior current headroom and direct PG-TO247-3 compatibility, making it optimal for 5–10 kW industrial converters where thermal margin and layout continuity are critical.

Availability

IGW50N65H5FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar converters, and welding converters requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from Infineon's qualified production lines.

Supply support for IGW50N65H5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IGW50N65H5 belongs to the TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for efficiency-critical industrial power conversion systems operating above 15 kHz with stringent thermal and reliability requirements.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G(on) = R_G(off) = 12 Ω for characterization at 25°C and 150°C. For reliable operation up to 50 kHz, R_G should remain between 8 Ω and 15 Ω to balance switching speed against gate oscillation and EMI. Lower values increase dV/dt stress; higher values raise switching losses and risk incomplete turn-on at high temperature.

Does IGW50N65H5FKSA1 include an integrated freewheeling diode?

Yes - it is co-packaged with a soft-recovery, ultrafast anti-parallel diode in the same PG-TO247-3 housing. The diode features low reverse recovery charge (Q_rr) and soft recovery behavior, verified in the datasheet's Figure E test circuit and confirmed in application notes AN2015-05 and AP2016-02.

Can this IGBT be used in parallel configurations?

Yes - its positive V_GE(th) temperature coefficient (4.0 V typ. at 25°C, increasing to 4.8 V at 175°C) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical layout, and individual gate resistors; Infineon recommends ≤2 devices in parallel without active current balancing for industrial designs.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the DC SOA is limited to 56 A at V_CE ≤ 200 V per Figure 3. For pulsed operation (t_p ≤ 100 µs), the device supports up to 150 A at V_CE ≤ 400 V, provided Tvj remains ≤175°C and transient thermal impedance is modeled using the Z_th(j–c) curves in the datasheet's Annex A.

IGW50N65H5FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 305 W

Switching Energy:: 520µJ (on), 180µJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 21ns/180ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IGW50N65H5FKSA1 FAQ

1.How can I place an order for IGW50N65H5FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW50N65H5FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW50N65H5FKSA1 reliable?

The price and inventory of IGW50N65H5FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW50N65H5FKSA1 is usually 5 days.

3.What payment methods are accepted for IGW50N65H5FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW50N65H5FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW50N65H5FKSA1?

IGW50N65H5FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW50N65H5FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW50N65H5FKSA1?

For technical support, including IGW50N65H5FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW50N65H5FKSA1 requirements.

6.How does Aetrix verify that IGW50N65H5FKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW50N65H5FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW50N65H5FKSA1 meets industry standards.

7.What is the process for return or replacement of IGW50N65H5FKSA1?

All IGW50N65H5FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW50N65H5FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW50N65H5FKSA1 part is unused and in its original packaging.

Return procedure for IGW50N65H5FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…