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Infineon Technologies IGW50N65HS
- Part No.:
- IGW50N65HS
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- -
- Datasheet:
-
IGW50N65HS.pdf
- Description:
- IGBT WITHOUT ANTI-PARALLEL DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:0
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Product details
Overview
IGW50N65H5 from Infineon is a 650 V, 50 A high-speed trench-gate field-stop IGBT in TRENCHSTOP™ 5 technology, designed for hard-switching and resonant topologies in industrial power converters. It delivers 1.65 V VCE(sat) at 25°C, 175°C maximum junction temperature, and low 120 nC total gate charge. Used in solar inverters and UPS systems where efficiency and thermal robustness are critical.
For engineers reviewing the IGW50N65H5 datasheet, IGW50N65H5 pinout, IGW50N65H5 application, or IGW50N65H5 equivalent, key selection factors include switching energy (0.16–1.02 mJ), thermal resistance (0.50 K/W j-c), collector-emitter breakdown voltage, gate threshold voltage range (3.2–4.8 V), and PG-TO247-3 package compatibility with high-power heatsink mounting.
Technical Context
This IGBT employs field-stop trench-gate architecture to minimize conduction and switching losses simultaneously. Its optimized carrier lifetime control enables fast turn-off (18–250 ns td(off)) while maintaining low VCE(sat) drift over temperature (1.65 V @ 25°C → 1.95 V @ 175°C).
The device integrates a monolithic anti-parallel diode with soft recovery characteristics, supporting ZVS/ZCS operation in resonant topologies. Gate drive requirements are standardized for ±20 V continuous and ±30 V transient operation, compatible with common isolated gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 650 V - Withstands DC bus voltages up to 650 V in 400 V nominal systems with margin for transients. |
| IC | 50 A continuous - Rated collector current at TC = 25°C; derates to 56 A at TC = 100°C per thermal limits. |
| VCE(sat) | 1.65 V @ Tvj = 25°C - Low saturation voltage reduces conduction loss in mid-to-high frequency PWM applications. |
| QG | 120 nC - Enables fast switching with moderate gate driver strength (e.g., 2–4 A peak) without excessive overshoot. |
| Tvj(max) | 175°C - Supports high ambient or thermally constrained designs with extended safe operating area up to 175°C junction. |
| Rth(j-c) | 0.50 K/W - Enables direct heatsink mounting with predictable thermal path; supports >300 W dissipation at ΔT = 150 K. |
| Eoff | 0.05–0.27 mJ - Low turn-off energy improves efficiency in 16–100 kHz hard-switched converters and reduces snubber stress. |
Pinout & Package
Package: PG-TO247-3 - Insulated plastic case with metal tab (collector-connected backside), optimized for high-current, high-voltage industrial mounting and thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring low-impedance drive; sensitive to ESD and dV/dt coupling; connects to gate driver output. |
| Pin 2 & Backside | Collector | Main high-side power terminal; electrically tied to metal tab for low-inductance, high-current return path to heatsink. |
| Pin 3 | Emitter | Power return reference; serves as source of gate drive loop; must be routed with minimal inductance to reduce switching oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed TRENCHSTOP™ 5 technology | Reduces total switching energy by ≥30% vs. prior-gen IGBTs at same VCE/IC, enabling higher-frequency operation without efficiency penalty. |
| Low QG (120 nC) | Permits use of cost-effective 2–4 A gate drivers instead of high-current alternatives, simplifying driver stage design and layout. |
| 175°C maximum junction temperature | Extends usable thermal headroom in compact enclosures and allows derating flexibility for long-term reliability in harsh environments. |
| Pb-free, RoHS-compliant lead plating | Meets global environmental compliance standards without performance trade-offs; qualified per JEDEC JESD47 for industrial life cycles. |
| Plug-and-play replacement for earlier H3/H4 IGBTs | Shares identical PG-TO247-3 footprint and pinout, enabling drop-in upgrade in existing designs with no PCB or driver redesign. |
Applications
| Solar String Inverters | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: DC–AC conversion stage in 3–10 kW photovoltaic inverters operating at 16–50 kHz with MPPT tracking. IC Role / Device Role: Main switching device in three-phase inverter bridge, handling bidirectional reactive power and grid synchronization. Use Value: Low VCE(sat) and switching loss enable >98.5% peak efficiency; 175°C rating supports passive cooling in outdoor-rated enclosures. |
Use Scenario: Online double-conversion UPS delivering clean sine-wave output during mains failure or distortion. IC Role / Device Role: Inverter-stage switch managing battery-to-AC conversion and active harmonic filtering under dynamic load steps. Use Value: Fast turn-off (≤25 ns tf) and low Eoff reduce thermal stress during frequent mode transitions; robust SOA supports overload tolerance. |
| Industrial Welding Converters | Mid-Frequency Induction Heaters |
|
Use Scenario: High-current DC-link switching in IGBT-based inverter welders operating at 20–100 kHz with 50–500 A output. IC Role / Device Role: Primary power switch in full-bridge topology driving resonant LC tank for arc stabilization and current regulation. Use Value: Soft-recovery integrated diode minimizes reverse recovery spikes; low tail current reduces diode-induced switching loss in hard-commutated arcs. |
Use Scenario: Resonant inverter stage in 20–100 kHz induction heating systems for metal hardening and brazing. IC Role / Device Role: Half-bridge switch controlling power delivery to series-resonant tank with precise phase control. Use Value: Optimized Cres (11 pF) and low QG support zero-voltage switching (ZVS) across wide load ranges, improving system efficiency and EMI profile. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN50N60B4 | 600 V rating, higher VCE(sat) (1.8 V), slower turn-off (220 ns td(off)), larger Rth(j-c) (0.65 K/W) | Limited to ≤400 V DC bus; less suitable for 650 V solar or UPS applications requiring margin | Select only if system voltage is strictly ≤400 V and thermal budget permits higher junction rise. |
| STMicroelectronics STGW50H65DFB2 | Same 650 V/50 A rating but higher Eoff (0.32 mJ), wider VGE(th) spread (4.0–6.0 V), no integrated diode | Requires external ultrafast diode; higher switching loss increases heatsink size in high-frequency designs | Prefer when discrete diode selection is required or when gate drive voltage tolerance >±1 V is acceptable. |
Compared with IXGN50N60B4 and STGW50H65DFB2, IGW50N65H5 offers superior efficiency in 650 V systems due to lower VCE(sat), faster switching, and tighter parameter distribution-enabling smaller heatsinks and higher power density in solar, UPS, and welding converters.
Availability
IGW50N65H5 is available at Aetrix Electronics and suitable for solar string inverters, uninterruptible power supplies, and industrial welding converters requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.
Supply support for IGW50N65H5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
The TRENCHSTOP™ 5 IGBT product line targets high-efficiency, high-reliability industrial power conversion-designed specifically for solar inverters, UPS, motor drives, and welding equipment demanding best-in-class switching performance and thermal resilience.
FAQ
What gate resistor value is recommended for optimal switching performance?
A 12 Ω gate resistor is specified in the datasheet for both turn-on and turn-off under standard test conditions (VCC = 400 V, IC = 25 A). This value balances switching speed (td(off) ≈ 180 ns) and gate oscillation suppression. Lower values (e.g., 5–8 Ω) reduce switching time but increase dV/dt stress and EMI; higher values (>22 Ω) improve EMI but raise switching losses.
Does IGW50N65H5 include an integrated freewheeling diode?
Yes-IGW50N65H5 integrates a monolithic, soft-recovery anti-parallel diode within the same die. The diode shares the emitter terminal (Pin 3) and collector backside (Pin 2), enabling compact half-bridge layouts without discrete diode placement or layout mismatch issues.
Can IGW50N65H5 operate reliably at 175°C junction temperature continuously?
Yes-the device is rated for continuous operation up to Tvj = 175°C and qualified per JEDEC JESD47 for industrial applications. However, sustained operation at this limit requires strict thermal design: case temperature must remain ≤100°C (given Rth(j-c) = 0.50 K/W), and SOA must be verified for pulse conditions using Figure 1 in the datasheet.
Is the PG-TO247-3 package electrically insulated?
No-the PG-TO247-3 package has an electrically conductive metal tab directly connected to the collector (Pin 2). Electrical isolation between collector and heatsink must be achieved using insulating thermal pads or ceramic washers. Mounting torque is specified at 0.6 Nm for M3 screws to ensure mechanical stability without die cracking.
IGW50N65HS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Current - Collector (Ic) (Max):
- -
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- -
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- -
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
IGW50N65HS FAQ
1.How can I place an order for IGW50N65HS through Aetrix?
Please submit a Request for Quotation (RFQ) for IGW50N65HS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IGW50N65HS reliable?
The price and inventory of IGW50N65HS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW50N65HS is usually 5 days.
3.What payment methods are accepted for IGW50N65HS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW50N65HS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IGW50N65HS?
IGW50N65HS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IGW50N65HS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IGW50N65HS?
For technical support, including IGW50N65HS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW50N65HS requirements.
6.How does Aetrix verify that IGW50N65HS is sourced from the original manufacturer or authorized distributors?
All IGW50N65HS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW50N65HS meets industry standards.
7.What is the process for return or replacement of IGW50N65HS?
All IGW50N65HS units undergo pre-shipment inspection (PSI). If there is an issue with IGW50N65HS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IGW50N65HS part is unused and in its original packaging.
Return procedure for IGW50N65HS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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