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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGW60N60H3FKSA1

Name: IGW60N60H3FKSA1
Brand: Infineon Technologies
SKU: IGW60N60H3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGW60N60H3FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IGW60N60H3FKSA1.pdf

Description:: IGBT TRENCH 600V 80A TO247-3

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Product details

Overview

IGW60N60H3FKSA1 from Infineon is a 600 V, 60 A high-speed Trench and Fieldstop IGBT optimized for industrial power conversion with 1.85 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and 3.23 mJ total switching energy at 25°C - deployed in UPS inverters, welding converters, and high-frequency DC-DC converters.

For engineers reviewing the IGW60N60H3FKSA1 datasheet, IGW60N60H3FKSA1 pinout, IGW60N60H3FKSA1 application, or IGW60N60H3FKSA1 equivalent, key selection criteria include turn-off energy (1.13 mJ), short-circuit withstand time (5 µs), gate charge (375 nC), thermal resistance R_thJC (0.36 K/W), and RoHS-compliant PG-TO247-3 packaging.

Technical Context

This third-generation High Speed Switching Series IGBT employs TRENCHSTOP™ technology to simultaneously minimize conduction loss (low V_CE(sat)) and switching loss (low E_off = 1.13 mJ), enabling operation up to 20 kHz in hard-switched topologies while maintaining robust short-circuit ruggedness (5 µs @ 150°C).

Its dynamic performance is characterized by low reverse transfer capacitance (C_res = 106 pF), fast fall time (t_f = 27 ns), and controlled tail current - all validated under standardized inductive load conditions (V_CE = 400 V, I_C = 60 A, R_G = 6 Ω) per Infineon's High Speed 3 Application Note.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50% voltage margin for transients and ringing.
I_C continuous	60 A @ T_C = 115°C - enables compact heatsink sizing in forced-air-cooled 5–10 kW converters.
V_CE(sat)	1.85 V @ 60 A, 25°C - reduces conduction loss to ~111 W at full load, critical for thermal management.
E_off	1.13 mJ @ 25°C - lowers switching loss in high-frequency applications like welding inverters (>15 kHz).
R_thJC	0.36 K/W - allows direct mounting to heatsink with predictable junction-to-case thermal path for reliability modeling.
t_sc	5 µs @ V_CE ≤ 400 V, T_J = 150°C - ensures safe fault handling without external desaturation circuitry in many UPS designs.
Q_G	375 nC - determines gate driver peak current requirement (~1.9 A for 200 ns rise time with 10 Ω gate resistor).

Pinout & Package

Supplied in PG-TO247-3 package with isolated collector tab (backside), featuring standard 3-pin through-hole layout optimized for high-current PCB mounting and thermal interface to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input requiring ±20 V rating; low input capacitance (C_ies = 3660 pF) eases driver design.
Pin 2 & backside	Collector	Main high-side power terminal; electrically connected to metal tab for low-inductance, high-current return path.
Pin 3	Emitter	Power return and reference node; internal emitter inductance measured at 13 nH (5 mm from case).

Key Features

Feature	Design Value
TRENCHSTOP™ trench-gate structure	Reduces V_CE(sat) by ~15% vs. planar IGBTs and suppresses EMI via controlled dV/dt during turn-off.
175°C maximum junction temperature	Enables higher power density and extended lifetime in thermally constrained enclosures (e.g., sealed UPS cabinets).
JEDEC-qualified for industrial applications	Validated for 1000+ short-circuit events with ≥1 s recovery interval - meets IPC-A-610 Class 3 reliability requirements.
Pb-free plating & halogen-free molding compound	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level MSL 1 (unlimited floor life).

Applications

Uninterruptible Power Supplies (UPS)

Industrial Welding Converters

Use Scenario: Three-phase IGBT inverter stage converting 400 V DC bus to 230 V AC output with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Main switching device in voltage-source inverter topology; handles bidirectional reactive power and overload currents up to 180 A pulsed.

Use Value: Low E_off (1.13 mJ) and fast t_f (27 ns) reduce thermal stress during battery-backup mode with high crest factor loads.

Use Scenario: Primary-side inverter in resonant or hard-switched arc welding power supplies operating at 15–50 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element controlling DC link energy delivery to transformer primary; rated for repetitive short-circuit events.

Use Value: 5 µs short-circuit withstand time and 175°C T_Jmax support duty-cycle-intensive welding cycles without derating.

High-Frequency DC-DC Converters

Motor Drive Inverters (Industrial)

Use Scenario: Isolated LLC or phase-shifted full-bridge converter stepping down 600 V DC input to 48 V/100 A output for server power or EV charging.

IC Role / Device Role / Timing Role: High-side switch in synchronous rectified or transformer-isolated topology; operates with tight dead-time control.

Use Value: Low C_res (106 pF) and stable V_GE(th) (4.1–5.7 V) ensure predictable zero-voltage switching (ZVS) boundary across temperature.

Use Scenario: 7.5–15 kW variable-frequency drive inverter stage powering three-phase induction motors in pumps and compressors.

IC Role / Device Role / Timing Role: Output stage switching device in 6-pulse inverter; interfaces with isolated gate drivers and overcurrent protection circuits.

Use Value: R_thJC = 0.36 K/W and 60 A continuous rating allow direct heatsink mounting without thermal interface pads in IP54-rated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5XKSA1	650 V, 40 A, lower Q_G (220 nC), higher V_CE(sat) (1.95 V), 175°C T_Jmax	Better suited for 600 V bus systems needing faster switching but lower current capability	Select when gate drive power budget is constrained and peak current ≤ 40 A suffices.
IGW25N120H3FKSA1	1200 V, 25 A, higher V_CE(sat) (2.1 V), same 175°C rating and TRENCHSTOP™ architecture	Targeted at 800 V DC bus systems (e.g., solar string inverters, traction converters)	Choose for higher voltage isolation requirements where 600 V margin is insufficient.

Compared with IKW40N65ES5XKSA1 and IGW25N120H3FKSA1, IGW60N60H3FKSA1 uniquely balances 60 A current handling, 600 V blocking, and sub-3.3 mJ total switching energy - making it optimal for cost-sensitive, thermally demanding 5–10 kW industrial converters where both conduction and switching losses must be minimized.

Availability

IGW60N60H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding converters, and high-frequency DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IGW60N60H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's High Speed Switching Series - engineered specifically for high-efficiency, high-frequency power conversion in industrial motor drives, UPS, and welding equipment where low switching loss and rugged short-circuit behavior are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for IGW60N60H3FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V for reliable turn-on and noise-immune turn-off. Exceeding +15 V increases risk of gate oxide degradation over time, while negative bias below –10 V offers no additional benefit and may stress gate driver output stages.

Does IGW60N60H3FKSA1 include an integrated anti-parallel diode?

No - IGW60N60H3FKSA1 is a discrete IGBT without an integrated freewheeling diode. System designers must use a separately optimized ultrafast or soft-recovery diode (e.g., IDH08SG60C) mounted in close proximity to minimize loop inductance and prevent voltage overshoot during turn-off.

How does junction temperature affect V_CE(sat) in this IGBT?

V_CE(sat) increases linearly with junction temperature: from 1.85 V at 25°C to 2.25 V at 175°C (typical). This positive temperature coefficient improves current sharing in parallel configurations and provides inherent thermal stability during overload conditions.

Can IGW60N60H3FKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient and matched dynamic parameters enable stable current sharing. Successful paralleling requires symmetrical gate drive layout (matched R_G, trace length, and decoupling), identical heatsinking, and individual emitter resistors for current sensing and imbalance correction.

IGW60N60H3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 180 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 60A

Power - Max:: 416 W

Switching Energy:: 2.1mJ (on), 1.13mJ (off)

Input Type:: Standard

Gate Charge:: 375 nC

Td (on/off) @ 25°C:: 27ns/252ns

Test Condition:: 400V, 60A, 6Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IGW60N60H3FKSA1 FAQ

1.How can I place an order for IGW60N60H3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGW60N60H3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGW60N60H3FKSA1 reliable?

The price and inventory of IGW60N60H3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGW60N60H3FKSA1 is usually 5 days.

3.What payment methods are accepted for IGW60N60H3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGW60N60H3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGW60N60H3FKSA1?

IGW60N60H3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGW60N60H3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGW60N60H3FKSA1?

For technical support, including IGW60N60H3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGW60N60H3FKSA1 requirements.

6.How does Aetrix verify that IGW60N60H3FKSA1 is sourced from the original manufacturer or authorized distributors?

All IGW60N60H3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGW60N60H3FKSA1 meets industry standards.

7.What is the process for return or replacement of IGW60N60H3FKSA1?

All IGW60N60H3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGW60N60H3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGW60N60H3FKSA1 part is unused and in its original packaging.

Return procedure for IGW60N60H3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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