Infineon Technologies IGW75N60H3FKSA1

Overview

IGW75N60H3FKSA1 from Infineon is a 600 V, 75 A high-speed IGBT using Trench and Fieldstop technology, optimized for switching frequencies up to 40 kHz in hard-switched topologies. It delivers 1.85 V collector-emitter saturation voltage at 75 A and 25°C, supports 175°C maximum junction temperature, and features low EMI emission-used in welding converters and UPS inverters.

For engineers reviewing the IGW75N60H3FKSA1 datasheet, IGW75N60H3FKSA1 pinout, IGW75N60H3FKSA1 application, or IGW75N60H3FKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, short-circuit withstand time (5 µs at 150°C), gate charge (470 nC), and thermal resistance R_thJC = 0.35 K/W.

Technical Context

This third-generation TRENCHSTOP™ IGBT integrates field-stop drift region and trench-gate structure to simultaneously reduce conduction loss and switching energy. Its dynamic characteristics-including 31 ns turn-on delay, 265 ns turn-off delay, and 4.7 mJ total switching energy at 25°C-are calibrated for 400 V DC-link operation with 75 A load current and 5.2 Ω gate resistor.

The device employs a monolithic co-packaged anti-parallel diode (IKW75N60H3) with reverse recovery behavior factored into total switching loss. Thermal design leverages low R_thJC (0.35 K/W) and 175°C rated junction, enabling compact heatsink solutions in industrial converters where ambient temperature exceeds 85°C.

Key Specifications

Pinout & Package

IGW75N60H3FKSA1 uses PG-TO247-3 package: isolated plastic housing with 3 leads and electrically active backside collector terminal. Mounting via M3 screw ensures low-inductance, high-current collector connection and mechanical stability under thermal cycling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IXGN75N60B3 and STGW75H60DL, IGW75N60H3FKSA1 offers the best balance of low conduction loss and moderate switching energy for 20–40 kHz industrial inverters, with proven field reliability in welding and UPS applications per Infineon's 2011 qualification data.

Availability

IGW75N60H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding converters, and high-frequency motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for IGW75N60H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and power conversion markets.

This device belongs to Infineon's TRENCHSTOP™ High-Speed IGBT product line, engineered specifically for industrial inverters, welding equipment, and UPS systems demanding low-loss, high-reliability switching at 20–40 kHz.

FAQ

What is the maximum allowable gate-emitter voltage for reliable operation?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases gate oxide stress and accelerates wear-out; negative bias below –10 V risks latch-up in parallel configurations. Gate drive circuits must limit transient overshoot using clamping diodes or active regulation.

Does IGW75N60H3FKSA1 include an integrated freewheeling diode?

No-it is a discrete IGBT in a 3-pin TO-247 package. However, it is designed for co-packaging with the companion IKW75N60H3 diode in dual modules. The datasheet switching energy values (E_sw) include diode reverse recovery loss, but the diode must be externally mounted or selected as a separate component in discrete designs.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases linearly with junction temperature: from 1.85 V at 25°C to 2.25 V at 175°C (typical). This 21.6% rise directly increases conduction loss and must be accounted for in thermal modeling. The positive temperature coefficient also provides inherent current-sharing stability in paralleled devices.

Can this IGBT be used in 650 V DC-link applications?

No-its rated V_CE max is 600 V with no safety margin for transients. For 650 V DC-link systems, use 650 V-rated devices such as Infineon's IGW75N65H5 or similar. Operating near breakdown voltage risks premature avalanche failure, especially under inductive load switching or line surges exceeding 100 V.