Infineon Technologies IGW75N65H5XKSA1

Overview

IGW75N65H5XKSA1 from Infineon is a 650 V, 75 A high-speed TRENCHSTOP™ 5 IGBT in PG-TO247-3 package, optimized for hard-switching and resonant topologies in UPS, solar inverters, and welding equipment. It delivers 1.65 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and low 160 nC gate charge for reduced switching losses.

For engineers reviewing the IGW75N65H5XKSA1 datasheet, IGW75N65H5XKSA1 pinout, IGW75N65H5XKSA1 application, or IGW75N65H5XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, turn-off energy (0.95 mJ at 25°C), thermal resistance (0.38 K/W j–c), and compatibility with 15 V gate drive in high-frequency converters.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology to achieve superior conduction and switching trade-offs. Its low Q_G (160 nC) and fast turn-off delay (174 ns at 25°C) enable operation up to mid-to-high switching frequencies (e.g., 20–50 kHz in solar MPPT stages).

The device integrates a co-packaged ultrafast diode (from IKW75N65EH5) with low reverse recovery charge, supporting snubberless inductive switching. Thermal design is enabled by its 0.38 K/W junction-to-case resistance and 175°C rated junction temperature.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3 package with isolated mounting flange (collector-connected backside). Standard through-hole mounting with M3 screw (0.6 Nm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKW75N65ES5 and FGH75T65SHD, IGW75N65H5XKSA1 offers the lowest combined conduction–switching loss product at 20–50 kHz, making it optimal for thermally constrained, high-efficiency renewable energy inverters where gate drive power and thermal management are critical.

Availability

IGW75N65H5XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar converters, and welding converters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IGW75N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, medium-frequency power conversion in solar inverters, UPS systems, and industrial welding equipment.

FAQ

What gate resistor value is recommended for optimal switching performance?

A gate resistor of 8 Ω (R_G(on) = R_G(off)) is specified in the datasheet for standardized switching characterization at 75 A and 400 V. This value balances E_on/E_off trade-offs and limits dv/dt to ≤15 V/ns. Lower values (e.g., 4.7 Ω) reduce switching time but increase EMI risk; higher values (e.g., 15 Ω) suppress ringing but raise total switching loss by up to 22%.

Does IGW75N65H5XKSA1 include an anti-parallel diode?

No - IGW75N65H5XKSA1 is a discrete IGBT die in a 3-pin TO-247 package with no integrated diode. The datasheet references IKW75N65EH5 as the companion diode for evaluation, but users must select and mount a separate ultrafast diode (e.g., IDW75E65D2) with matched Q_rr and t_rr for bidirectional current paths.

How does V_CE(sat) change across temperature and current?

V_CE(sat) increases linearly with junction temperature: 1.65 V at 25°C, 1.85 V at 125°C, and 1.95 V at 175°C (measured at I_C = 75 A). At fixed temperature, it rises sublinearly with current-e.g., 1.45 V at 37.5 A and 1.65 V at 75 A (25°C)-due to channel resistance and conductivity modulation effects.

Is this part suitable for parallel operation?

Yes - its positive V_GE(th) temperature coefficient (3.2–4.8 V range, decreasing with T_vj) and flat output characteristics above 10 V gate drive promote current sharing. Successful parallel use requires matched gate drive layout, identical R_G, and emitter ballasting resistors (≤0.1 Ω) to mitigate dynamic imbalance during turn-on.