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Infineon Technologies IGZ100N65H5XKSA1

Part No.:
IGZ100N65H5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-4
Datasheet:
AetrixIGZ100N65H5XKSA1.pdf
Description:
IGBT TRENCH 650V 161A TO247-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,918

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Product details

Overview

IGZ100N65H5XKSA1 from Infineon is a 650V, 100A high-speed TRENCHSTOP™ 5 IGBT with Kelvin emitter configuration in PG-TO247-4 package, designed for hard-switching and resonant topologies in solar string inverters, welding converters, and UPS systems. It delivers 1.65V VCE(sat) at 100A/25°C, 210nC gate charge, and 175°C maximum junction temperature.

For engineers reviewing the IGZ100N65H5XKSA1 datasheet, IGZ100N65H5XKSA1 pinout, IGZ100N65H5XKSA1 application, or IGZ100N65H5XKSA1 equivalent, key selection criteria include ultra-low switching loss enabled by Kelvin emitter, JEDEC-qualified reliability for industrial power control, and compatibility with existing H4/H3 board layouts as a plug-and-play upgrade.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure with integrated Kelvin emitter terminal to decouple gate control from power current path, minimizing Miller-induced turn-off oscillation and enabling precise gate drive timing. Its low Cies (6560pF) and Cres (21pF) at 25V support fast, stable switching up to 50kHz in hard-switched converters.

The device operates across -40°C to +175°C junction range with 0.28K/W Rth(j-c), optimized for forced-air or liquid-cooled heatsink mounting. Switching energy is characterized at 400V/50A with 8Ω/18Ω gate resistors, yielding 0.85mJ Eon and 0.77mJ Eoff at 25°C, increasing to 2.19mJ total at 150°C.

Key Specifications

ParameterValue and Actual Design Meaning
VCE650V - supports DC bus voltages up to 600V in solar inverters and UPS designs
IC100A continuous - rated for 100A collector current at TC = 25°C with thermal derating
VCE(sat)1.65V at 100A/25°C - enables low conduction loss and reduced heatsink requirements
QG210nC - determines gate driver peak current demand and influences switching speed control
Tvj(max)175°C - allows operation in high-ambient industrial environments with margin for transient overload
Rth(j-c)0.28K/W - defines minimum heatsink thermal resistance needed for safe 100A operation
Ets1.62mJ at 25°C - quantifies total switching loss per cycle in 400V/50A inductive test condition

Pinout & Package

IGZ100N65H5XKSA1 uses the PG-TO247-4 package with isolated Kelvin emitter terminal to eliminate power loop inductance from gate control path. The backside metal serves as collector connection, requiring insulated mounting hardware.

Pin/TerminalCircuit RoleDesign Meaning
C (front pin)CollectorMain high-side power output node; electrically tied to backside metal
E (front pin)Power EmitterHigh-current return path for load current; not interchangeable with K
K (front pin)Kelvin EmitterSense-only emitter reference for gate driver feedback; eliminates VCE error from emitter inductance
G (front pin)GateControl input referenced to Kelvin emitter; requires low-inductance gate loop layout

Key Features

FeatureDesign Value
Kelvin emitter configurationEnables accurate gate voltage referencing independent of power emitter voltage drop, suppressing false turn-on during high di/dt
TRENCHSTOP™ 5 technologyDelivers best-in-class trade-off between VCE(sat) and switching loss via optimized field-stop layer and trench geometry
JEDEC qualificationValidated for industrial power control applications including temperature cycling, humidity bias, and high-temperature operating life
Pb-free RoHS complianceMeets EU RoHS Directive 2011/65/EU with lead-free plating and halogen-free molding compound

Applications

Solar String InvertersUninterruptible Power Supplies

Use Scenario: DC-to-AC conversion stage in 5–15kW photovoltaic inverters with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: High-side IGBT switch in three-phase inverter bridge, operating at 16–32kHz with soft-switching assistance.

Use Value: 1.65V VCE(sat) and 210nC QG enable >98.5% peak efficiency while maintaining thermal margin at 60°C ambient.

Use Scenario: Online double-conversion UPS delivering clean sine-wave output during utility outages.

IC Role / Device Role / Timing Role: Inverter-stage switching element handling bidirectional power flow between battery bank and AC output.

Use Value: 175°C Tvj(max) and 0.28K/W Rth(j-c) support sustained 100% load operation under forced-air cooling without derating.

Welding ConvertersMid-Frequency Induction Heaters

Use Scenario: Inverter-based arc welding equipment requiring precise current regulation and fast response to load transients.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC or phase-shifted full-bridge topology operating at 20–100kHz.

Use Value: Low Cres (21pF) and fast td(off) (421ns) minimize dead-time uncertainty and improve current regulation fidelity.

Use Scenario: Solid-state induction heating systems for metal hardening and brazing at 20–80kHz.

IC Role / Device Role / Timing Role: Half-bridge leg switch managing high-Q tank circuit with rapid polarity reversal and high di/dt.

Use Value: Kelvin emitter pin ensures stable gate control despite >10kA/µs emitter current slew rates, preventing parasitic turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKZ100N65EH5Same die, identical electrical specs, but PG-TO247-3 package without Kelvin emitterLacks Kelvin sense capability; requires external emitter bypass for high-di/dt stabilitySelect when cost sensitivity outweighs need for ultra-stable gate control in lower-frequency (<15kHz) topologies
IGW100N65H5Same VCE/IC/Tvj, but higher VCE(sat) (1.75V typ.) and QG (230nC), no Kelvin emitterHigher conduction and switching losses; suited for simpler gate drive circuitsChoose where gate driver simplicity and legacy footprint compatibility are prioritized over peak efficiency

Compared with IKZ100N65EH5 and IGW100N65H5, IGZ100N65H5XKSA1 uniquely provides Kelvin emitter functionality for millivolt-level gate voltage accuracy-critical for zero-voltage switching stability and EMI reduction in high-frequency resonant converters.

Availability

IGZ100N65H5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term industrial lifecycle support, and traceable manufacturing origin.

Supply support for IGZ100N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency power conversion in solar, UPS, and industrial motor drives.

FAQ

What is the purpose of the Kelvin emitter pin (K) on IGZ100N65H5XKSA1?

The Kelvin emitter pin provides a dedicated low-current reference path for the gate driver, isolating gate control from voltage drops across the main emitter bond wires and PCB traces. This prevents false turn-on caused by high di/dt-induced emitter inductance and ensures precise VGE regulation during fast switching transitions.

Can IGZ100N65H5XKSA1 replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes-it is designed as a plug-and-play replacement for previous-generation devices like IKW100N65ES5, offering improved efficiency and thermal performance without requiring PCB layout changes. However, gate resistor values may require minor optimization due to its lower QG and faster switching characteristics.

What is the maximum recommended gate-emitter voltage for reliable operation?

The absolute maximum gate-emitter voltage is ±20V DC, with a transient rating of ±30V for pulses ≤10µs and duty cycle <1%. Operating above ±20V risks permanent gate oxide damage; gate drivers must clamp to this limit using Zener diodes or active clamping circuits.

How does the internal emitter inductance affect layout design?

The device specifies 13nH internal emitter inductance, which is mitigated by routing the Kelvin emitter trace directly to the gate driver ground plane-separate from the high-current emitter path. This layout technique eliminates the inductive coupling that causes gate ringing and instability in standard TO-247-3 configurations.

IGZ100N65H5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™ 5
Package/Case:
TO-247-4
Packaging:
Bulk
Product Status:
Active
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
161 A
Current - Collector Pulsed (Icm):
400 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 100A
Power - Max:
536 W
Switching Energy:
850µJ (on), 770µJ (off)
Input Type:
Standard
Gate Charge:
210 nC
Td (on/off) @ 25°C:
30ns/421ns
Test Condition:
400V, 50A, 8Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-4

IGZ100N65H5XKSA1 FAQ

1.How can I place an order for IGZ100N65H5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGZ100N65H5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGZ100N65H5XKSA1 reliable?

The price and inventory of IGZ100N65H5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGZ100N65H5XKSA1 is usually 5 days.

3.What payment methods are accepted for IGZ100N65H5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGZ100N65H5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGZ100N65H5XKSA1?

IGZ100N65H5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGZ100N65H5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGZ100N65H5XKSA1?

For technical support, including IGZ100N65H5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGZ100N65H5XKSA1 requirements.

6.How does Aetrix verify that IGZ100N65H5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGZ100N65H5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGZ100N65H5XKSA1 meets industry standards.

7.What is the process for return or replacement of IGZ100N65H5XKSA1?

All IGZ100N65H5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGZ100N65H5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGZ100N65H5XKSA1 part is unused and in its original packaging.

Return procedure for IGZ100N65H5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IGZ100N65H5XKSA1 Tags

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