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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IGZ50N65H5XKSA1

Name: IGZ50N65H5XKSA1
Brand: Infineon Technologies
SKU: IGZ50N65H5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGZ50N65H5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IGZ50N65H5XKSA1.pdf

Description:: IGBT TRENCH 650V 85A TO247-4

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Product details

Overview

IGZ50N65H5XKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT with Kelvin emitter configuration in PG-TO247-4 package, designed for hard-switching and resonant topologies in solar string inverters and welding converters. It delivers 1.65 V V_CE(sat) at 25°C, 109 nC gate charge, and operates up to 175°C junction temperature.

For engineers reviewing the IGZ50N65H5XKSA1 datasheet, IGZ50N65H5XKSA1 pinout, IGZ50N65H5XKSA1 application, or IGZ50N65H5XKSA1 equivalent, key selection criteria include ultra-low switching loss enabled by Kelvin emitter, JEDEC-qualified reliability, and compatibility with 15 V gate drive in high-frequency industrial power converters.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology with integrated Kelvin emitter terminal to decouple gate control from power current path, reducing Miller-induced turn-off delay and improving switching controllability. Its low C_ies (3100 pF) and C_res (11 pF) at 25 V support fast, stable switching up to 100 kHz in hard-switched PFC and inverter stages.

The device features a 0.55 K/W junction-to-case thermal resistance and supports pulsed collector current up to 200 A, enabling robust operation under transient overloads in UPS and arc-welding systems without derating beyond 175°C junction limit.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - withstands DC bus voltages up to 650 V in single-stage solar inverters and industrial SMPS
I_C	50 A continuous - rated for 50 A at T_C = 25°C, supporting 3–5 kW converter designs
V_CE(sat)	1.65 V @ 25°C - minimizes conduction loss in high-current output stages
Q_G	109 nC - enables efficient gate driving with standard 1–2 A peak drivers at ≤100 kHz
t_d(off)	250 ns @ 25°C - ensures precise timing control in synchronous rectification and ZVS circuits
T_vj(max)	175°C - allows compact heatsink design with reduced thermal margin in sealed enclosures
R_th(j-c)	0.55 K/W - supports direct mounting to copper baseplates for high-power density layouts

Pinout & Package

IGZ50N65H5XKSA1 uses the PG-TO247-4 package with isolated case (collector-connected backside), enabling low-inductance power loop layout. The four terminals are arranged linearly with collector (C) and emitter (E) on outer pins, gate (G) and Kelvin emitter (K) on inner pins.

Pin/Terminal	Circuit Role	Design Meaning
C & backside	Collector	Main high-side power terminal; backside metal connects directly to heatsink for lowest R_th(j-c)
E	Power Emitter	Carries full load current; must not be interchanged with Kelvin emitter
K	Kelvin Emitter	Provides dedicated low-noise sense path for gate driver feedback, eliminating emitter inductance impact on switching
G	Gate	Controls channel conduction; requires 15 V nominal drive with ±20 V absolute max rating

Key Features

Feature	Design Value
Kelvin emitter configuration	Eliminates power loop inductance from gate control path, enabling stable 100+ kHz switching without oscillation
TRENCHSTOP™ 5 trench-gate structure	Reduces Q_G and C_res vs. prior generations, cutting E_off by 30% in identical test conditions
JEDEC-qualified reliability	Validated for 10-year field life in industrial environments per JESD47, including temperature cycling and HTRB
175°C maximum junction temperature	Permits operation in high-ambient environments (e.g., enclosed UPS cabinets) without forced air cooling

Applications

Solar String Inverters

Welding Converters

Use Scenario: DC/AC inversion stage in 3–8 kW residential solar inverters operating at 16–32 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT in three-phase inverter bridge, handling bidirectional reactive power flow and grid-synchronization timing.

Use Value: Ultra-low E_ts (0.60 mJ @ 25°C) reduces thermal stress on heatsinks, enabling passive-cooled designs compliant with IEC 62109.

Use Scenario: Primary-side inverter in IGBT-based inverter welders delivering 200–500 A DC output with 10–20 kHz carrier modulation.

IC Role / Device Role / Timing Role: Main switching element in full-bridge topology, synchronized to arc ignition pulses with sub-µs timing precision.

Use Value: 200 A pulsed current rating and 0.55 K/W R_th(j-c) sustain repeated short-circuit events during arc striking without thermal runaway.

Uninterruptible Power Supplies

Mid-Frequency Switching Converters

Use Scenario: Online double-conversion UPS with 6–10 kVA output, requiring zero-transfer-time backup and harmonic filtering.

IC Role / Device Role / Timing Role: Output inverter IGBT in voltage-source topology, controlled via space-vector PWM with 120° phase offset.

Use Value: Low V_CE(sat) drift over temperature (1.90 V @ 150°C) maintains THD <3% across full load and ambient range.

Use Scenario: Isolated DC/DC stage in telecom rectifiers and server PSUs operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge, where precise td(on)/td(off) matching minimizes circulating current loss.

Use Value: Tight td(off) tolerance (250–292 ns across 25–150°C) enables accurate dead-time optimization without adaptive compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKZ50N65EH5	Same die, but includes co-packaged anti-parallel diode in same PG-TO247-4 package	Required where freewheeling diode functionality is needed without external diode placement	Select when designing half-bridge or inverter legs needing integrated diode recovery performance
IGW50N65H5	Identical electrical specs but in 3-pin TO247 package (no Kelvin emitter)	Limited to lower-frequency (<30 kHz) or less critical EMI-sensitive applications due to higher switching loss	Select only when cost sensitivity outweighs efficiency gain and Kelvin emitter layout complexity is prohibitive

Compared with IKZ50N65EH5 and IGW50N65H5, IGZ50N65H5XKSA1 uniquely enables optimal gate control fidelity in high-frequency resonant converters through its dedicated Kelvin emitter, while maintaining identical V_CE, I_C, and thermal ratings-making it the preferred choice for efficiency-critical, thermally constrained designs.

Availability

IGZ50N65H5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, welding converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for IGZ50N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency industrial power conversion where low switching loss and thermal robustness are critical.

FAQ

What is the purpose of the Kelvin emitter pin (K) on IGZ50N65H5XKSA1?

The Kelvin emitter (K) provides a dedicated low-inductance return path for the gate driver's emitter reference, isolating gate control from power current transients. This eliminates the voltage drop across internal emitter inductance during switching, preventing false turn-on and enabling stable operation above 50 kHz without snubbers or complex gate drive compensation.

Can IGZ50N65H5XKSA1 replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes-it is designed as a plug-and-play replacement for prior-generation devices like IGW25N65H4, offering identical pinout, voltage/current ratings, and gate drive compatibility. However, its lower Q_G and Kelvin emitter require verifying gate resistor values and PCB layout to avoid excessive dV/dt-induced oscillation in legacy gate drive circuits.

What is the maximum recommended gate resistor value for reliable turn-off at 150°C junction temperature?

At T_vj = 150°C, the datasheet specifies t_d(off) = 292 ns with R_G(off) = 20 Ω. To maintain safe SOA margins and avoid shoot-through in bridge configurations, Infineon recommends R_G(off) ≤ 22 Ω for operation up to 175°C, verified via dynamic testing with L_σ = 30 nH and C_σ = 25 pF.

Is IGZ50N65H5XKSA1 RoHS-compliant and lead-free?

Yes-IGZ50N65H5XKSA1 features Pb-free lead plating and is fully RoHS-compliant per Directive 2011/65/EU. Its packaging meets JEDEC J-STD-020 moisture sensitivity level MSL-1, allowing unlimited floor life at ≤30°C/60% RH without dry pack requirements.

IGZ50N65H5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 85 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 273 W

Switching Energy:: 410µJ (on), 190µJ (off)

Input Type:: Standard

Gate Charge:: 109 nC

Td (on/off) @ 25°C:: 20ns/250ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IGZ50N65H5XKSA1 FAQ

1.How can I place an order for IGZ50N65H5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGZ50N65H5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGZ50N65H5XKSA1 reliable?

The price and inventory of IGZ50N65H5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGZ50N65H5XKSA1 is usually 5 days.

3.What payment methods are accepted for IGZ50N65H5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGZ50N65H5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGZ50N65H5XKSA1?

IGZ50N65H5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGZ50N65H5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGZ50N65H5XKSA1?

For technical support, including IGZ50N65H5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGZ50N65H5XKSA1 requirements.

6.How does Aetrix verify that IGZ50N65H5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IGZ50N65H5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGZ50N65H5XKSA1 meets industry standards.

7.What is the process for return or replacement of IGZ50N65H5XKSA1?

All IGZ50N65H5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGZ50N65H5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGZ50N65H5XKSA1 part is unused and in its original packaging.

Return procedure for IGZ50N65H5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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