Infineon Technologies IGZ75N65H5XKSA1

Overview

IGZ75N65H5XKSA1 from Infineon is a 650 V, 75 A high-speed TRENCHSTOP™ 5 IGBT with Kelvin emitter pin, optimized for hard-switching and resonant topologies in industrial power converters. It delivers 1.65 V V_CE(sat) at 75 A and 25°C, supports 175°C maximum junction temperature, and features ultra-low switching losses enabled by integrated Kelvin emitter sensing.

For engineers reviewing the IGZ75N65H5XKSA1 datasheet, IGZ75N65H5XKSA1 pinout, IGZ75N65H5XKSA1 application, or IGZ75N65H5XKSA1 equivalent, key selection criteria include gate charge (166 nC), internal emitter inductance (13 nH), turn-off delay (347 ns at 25°C), E_off (0.43 mJ), and PG-TO247-4 package compatibility with thermal resistance R_th(j–c) = 0.38 K/W.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure with dedicated Kelvin emitter terminal to decouple gate control from power emitter current path. The architecture minimizes Miller effect and enables precise gate drive timing independent of load current transients.

It operates with ±20 V DC and ±30 V transient gate-emitter voltage rating, supports 300 A pulsed collector current, and maintains stable V_GE(th) (3.2–4.8 V) across –40°C to +175°C junction temperature range while delivering <1.90 V V_CE(sat) up to 150°C.

Key Specifications

Pinout & Package

IGZ75N65H5XKSA1 uses the PG-TO247-4 package: a 4-pin through-hole variant with isolated collector tab (backside), standard emitter (E), Kelvin emitter (K), and gate (G). The collector (C) and backside are electrically common; emitter and Kelvin emitter pins are non-interchangeable.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IKZ75N65EH5 and IGW75N65H5, IGZ75N65H5XKSA1 uniquely combines Kelvin emitter sensing, lowest E_off, and PG-TO247-4 mechanical layout-making it optimal for high-efficiency, high-frequency industrial inverters demanding precise gate control and minimal switching loss.

Availability

IGZ75N65H5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, uninterruptible power supplies, and mid-frequency welding converters requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for IGZ75N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency industrial power conversion where low switching loss and thermal robustness are critical.

FAQ

What is the purpose of the Kelvin emitter (pin K) on IGZ75N65H5XKSA1?

The Kelvin emitter provides a dedicated low-inductance reference path for the gate driver, isolating gate control from power emitter current transients. This prevents voltage spikes induced by L_E × di/dt from distorting gate voltage, enabling stable high-speed switching and reducing risk of false turn-on. It must be connected directly to the driver ground, not shared with the main emitter (E) trace.

Can IGZ75N65H5XKSA1 replace IGW75N65H5 in an existing design?

Yes, but only with PCB layout revision to accommodate the fourth pin (Kelvin emitter). The electrical ratings are identical, but omitting the Kelvin emitter connection forfeits its switching performance benefits. If the original design uses IGW75N65H5 in TO247-3, adding the K-pin routing and separating driver ground from power ground is mandatory to realize the full advantage.

What is the maximum recommended gate resistor value for reliable turn-off?

Based on datasheet test conditions (R_G(off) = 18 Ω), and considering E_off increase and td(off) extension beyond 400 ns at 150°C, Infineon recommends R_G(off) ≤ 22 Ω for hard-switching applications up to 20 kHz. Higher values risk excessive turn-off loss and thermal stress; lower values require careful driver current capability verification (peak >4 A for 166 nC/40 ns).

Is IGZ75N65H5XKSA1 suitable for use in a 650 V SiC MOSFET-based gate driver evaluation board?

No - IGZ75N65H5XKSA1 is an IGBT, not a gate driver IC. It cannot function as a gate driver. However, it can be driven *by* a SiC MOSFET gate driver (e.g., 1ED34xx series) due to its 15 V gate threshold and ±20 V gate rating. Its Kelvin emitter pin is compatible with drivers supporting separate source-sense connections.