Infineon Technologies IHFW40N65R5SXKSA1

Overview

IHFW40N65R5SXKSA1 from Infineon is a 650V, 40A reverse-conducting IGBT with monolithic body diode in a fully isolated TO-247 package, featuring TRENCHSTOP™ 5 technology, 1.5V V_CE(sat) at 25°C, 2500V_RMS isolation, and 175°C max junction temperature - deployed in high-efficiency resonant converters and induction heating systems.

For engineers reviewing the IHFW40N65R5SXKSA1 datasheet, IHFW40N65R5SXKSA1 pinout, IHFW40N65R5SXKSA1 application, or IHFW40N65R5SXKSA1 equivalent, this device delivers verified hard-switching efficiency, soft fast-recovery diode behavior, and industrial-grade thermal robustness for compact power stage designs requiring galvanic isolation and high reliability.

Technical Context

This RC-IGBT integrates a co-packaged, optimized antiparallel diode with ultra-low Q_rr (2.48 µC typ. at 25°C) and soft recovery (dI_rr/dt = −1493 A/µs), enabling low EMI and reduced snubber stress in ZVS/ZCS topologies. Its gate charge of 142 nC supports efficient 20–100 kHz switching with controlled dV/dt.

The device uses a fully isolated PG-HSIP247-3-2 package with 100% tested insulated mounting surface, delivering 1.19 K/W typical R_th(j–h) for the IGBT and 3.32 K/W for the diode - critical for thermally constrained induction cooking modules where heatsink access is limited.

Key Specifications

Pinout & Package

Package: PG-HSIP247-3-2 (TO-247 variant with fully isolated mounting base). The package features three terminals: Collector (C), Emitter (E), and Gate (G), with the metal tab electrically isolated and rated for 2500 V_RMS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IXGN40N60B3 and STGW40H65DFB, IHFW40N65R5SXKSA1 uniquely combines 650 V rating, monolithic soft diode, and certified 2500 V_RMS isolation in one package - reducing BOM count, safety validation effort, and thermal stack-up complexity in consumer-grade high-power inverters.

Availability

IHFW40N65R5SXKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, inverterized microwave ovens, and industrial resonant converters requiring stable component supply, long-term lifecycle support, and certified galvanic isolation.

Supply support for IHFW40N65R5SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to Infineon's TRENCHSTOP™ 5 RC-IGBT product line, engineered specifically for high-frequency resonant and hard-switching inverters in energy-efficient home appliances and industrial power supplies.

FAQ

What is the maximum allowable gate-emitter voltage for IHFW40N65R5SXKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient conditions (tp ≤ 10 µs, duty cycle < 1%). Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drivers must include clamping or zener protection to maintain long-term reliability under PWM transients.

Can IHFW40N65R5SXKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (1.5 V at 25°C → 1.85 V at 175°C) enables inherent current sharing. Successful paralleling requires matched gate resistors (<5% tolerance), symmetrical PCB layout, and individual gate loop inductance <10 nH to avoid dynamic imbalance during switching transitions.

Does the 2500 V_RMS isolation rating apply to the entire package or just the mounting surface?

The 2500 V_RMS rating applies specifically to the isolation barrier between the collector terminal (including the metal tab) and all other terminals (emitter, gate), verified per IEC 60747-5-2. It does not extend to creepage/clearance between pins - those must be designed per end-equipment safety standards (e.g., IEC 60335-1).

How does the integrated diode differ from standard FRDs in terms of reverse recovery behavior?

Unlike standard fast recovery diodes, this monolithic diode exhibits soft recovery (dI_rr/dt = −1493 A/µs at 25°C) and low stored charge (Q_rr = 2.48 µC), resulting in minimal voltage overshoot and reduced EMI generation. Its recovery waveform is tightly coupled to the IGBT's switching dynamics, enabling predictable commutation in half-bridge configurations.