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Infineon Technologies IHP10T120

Part No.:
IHP10T120
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixIHP10T120.pdf
Description:
IGBT 1200V 16A 138W TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,592

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Product details

Overview

IHP10T120 from Infineon Technologies is a 1200 V, 10 A TrenchStop™ and Fieldstop™ IGBT with integrated EmCon™ HE anti-parallel diode in a PG-TO-220-3-1 package. It delivers 1.7 V VCE(sat) at 25°C, 10 µs short-circuit withstand time, and soft, fast-recovery diode behavior optimized for induction heating and resonant soft-switching topologies.

For engineers reviewing the IHP10T120 datasheet, IHP10T120 pinout, IHP10T120 application, or IHP10T120 equivalent, key selection criteria include its positive VCE(sat) temperature coefficient for parallel operation, low EMI due to controlled diode recovery, and JEDEC-qualified ruggedness for high-reliability industrial power conversion.

Technical Context

The IHP10T120 integrates an IGBT and an EmCon™ HE diode in a single die-level DuoPack configuration. Its TrenchStop™/Fieldstop™ structure enables tight parameter distribution and stable VCE(sat) up to 150°C, while the diode features 115 ns trr (25°C) and 630 nC Qrr (150°C), minimizing reverse recovery losses in ZVS/ZCS circuits.

Designed explicitly for soft-switching applications, it supports gate drive with ±20 V VGE, exhibits 53 nC total gate charge, and maintains safe operating area up to 24 A pulsed collector current under VCE ≤ 1200 V and Tj ≤ 150°C conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 1200 V - Supports DC bus voltages up to 900 V in three-phase rectified systems with margin.
IC (continuous) 10 A at TC = 100°C - Enables compact heatsink design in 2–3 kW induction heating inverters.
VCE(sat) 1.7 V @ Tj = 25°C - Reduces conduction loss by ~15% vs. comparable 1200 V IGBTs with >2.0 V saturation.
tSC 10 µs @ VGE = 15 V - Allows robust overcurrent protection without desaturation circuit complexity.
trr / Qrr 115 ns / 330 nC @ 25°C - Limits diode-induced voltage overshoot and EMI in high-frequency resonant converters.
RthJC (IGBT) 0.9 K/W - Enables thermal interface design with <1.5°C/W total junction-to-ambient path for 10 A continuous operation.
Ptot 138 W @ TC = 25°C - Defines maximum dissipation limit before derating; usable up to 100 W at TC = 100°C per Fig. 3.

Pinout & Package

PG-TO-220-3-1 package: isolated mounting base, through-hole mounting, 3-terminal configuration with collector tab electrically connected to case. Pin 1 = Gate (G), Pin 2 = Collector (C), Pin 3 = Emitter (E).

Pin/Terminal Circuit Role Design Meaning
G Gate control input Receives 0/+15 V logic-level drive; internal 10 Ω gate resistor reduces ringing risk with standard gate drivers.
C High-side power output Collector terminal tied to heatsink; requires insulated mounting when case is grounded or floating.
E Emitter reference and return path Serves as common source for IGBT and diode; must be low-inductance connection to minimize switching voltage spikes.

Key Features

Feature Design Value
TrenchStop™ + Fieldstop™ IGBT structure Enables 1200 V blocking with 1.7 V VCE(sat) and positive temperature coefficient for stable parallel operation.
EmCon™ HE anti-parallel diode Delivers soft, fast recovery (trr = 115 ns) with low Qrr, reducing snubber stress and EMI in ZVS inverters.
JEDEC-qualified ruggedness Validated for ≥1000 short-circuit events (10 µs each, >1 s apart) in target induction heating applications.
RoHS-compliant Pb-free plating Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); compatible with lead-free reflow and wave soldering.

Applications

Induction Heating Inverter Resonant DC-DC Converter

Use Scenario: 20–100 kHz half-bridge inverter driving series-resonant tank for cooktop or industrial heating.

IC Role / Device Role / Timing Role: Main switching device in ZVS topology; handles bidirectional current via integrated diode during dead-time.

Use Value: Low Qrr and soft recovery reduce diode-induced voltage spikes, enabling reliable 80–100 kHz operation without external snubbers.

Use Scenario: Isolated LLC resonant converter for EV charger auxiliary power supply or telecom rectifier.

IC Role / Device Role / Timing Role: Primary-side switch with synchronous rectification support; leverages soft diode for body-diode replacement.

Use Value: 10 µs short-circuit rating allows simplified overcurrent protection, and low Eoff (0.78 mJ) improves efficiency at 300–500 kHz switching.

UPS Inverter Stage Motor Drive Half-Bridge

Use Scenario: 1200 V, 10 kVA online UPS inverter with active PFC front-end and battery backup.

IC Role / Device Role / Timing Role: Output stage IGBT with integrated diode for regenerative braking energy handling and freewheeling.

Use Value: Tight VCE(sat) distribution ensures balanced current sharing across paralleled devices, improving thermal reliability.

Use Scenario: 7.5 kW permanent magnet motor drive for HVAC compressors using 3-phase inverter bridge.

IC Role / Device Role / Timing Role: Phase-leg switch with integrated diode providing commutation path during PWM dead-time.

Use Value: 150°C max junction temperature and 0.9 K/W RthJC allow sustained 10 A RMS operation with passive heatsinking in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT+diode power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP10NC120HD 1200 V, 10 A; VCE(sat) = 2.1 V @ 25°C; trr = 220 ns; no integrated gate resistor. Higher conduction loss and slower diode recovery increase system EMI and thermal load in >50 kHz designs. Preferable only where cost sensitivity outweighs efficiency and EMI requirements.
IXYS IXGN100N120B3 1200 V, 100 A rated; VCE(sat) = 2.4 V @ 25°C; discrete diode; higher gate charge (120 nC). Over-specified current rating increases layout inductance and gate drive complexity for 10 A applications. Only suitable when future scalability to >50 A or discrete diode optimization is required.

Compared with STGP10NC120HD and IXGN100N120B3, the IHP10T120 provides lower conduction loss, faster diode recovery, and built-in gate resistance-enabling simpler, more efficient soft-switching designs below 100 kHz without sacrificing ruggedness or thermal margin.

Availability

IHP10T120 is available at Aetrix Electronics and suitable for induction heating inverters, resonant DC-DC converters, and UPS inverter stages requiring stable component supply, JEDEC-qualified ruggedness, and soft-switching-optimized diode performance.

Supply support for IHP10T120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

The IHP10T120 belongs to Infineon's Soft Switching Series, engineered specifically for zero-voltage and zero-current switching topologies in induction heating, resonant converters, and high-efficiency motor drives.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off in a 50 kHz ZVS inverter?

For stable turn-off with minimal oscillation and acceptable Eoff, a gate resistor of 81 Ω is validated in the datasheet under 50–100 kHz conditions. Using >100 Ω increases turn-off time and energy loss; <50 Ω risks gate ringing due to 13 nH internal emitter inductance and PCB layout parasitics.

Can the IHP10T120 be operated at 150°C junction temperature continuously?

Yes-its absolute maximum Tj is 150°C, and thermal data (Fig. 4) confirms 10 A continuous current is supported at TC = 100°C, implying sustained 150°C junction operation with proper heatsinking and derating per Fig. 3's Ptot curve.

Is the integrated diode suitable for synchronous rectification in LLC converters?

No-the EmCon™ HE diode is optimized for soft freewheeling and reverse recovery, not low-VF conduction. Its 1.65 V forward voltage at 4 A (25°C) is higher than dedicated SiC Schottky or MOSFET synchronous rectifiers, making it unsuitable for high-efficiency secondary-side rectification.

Does the IHP10T120 require negative gate voltage for reliable turn-off?

No-datasheet characterization uses 0 V/15 V gate drive (VGE = 0 V for off-state). While −5 V to −10 V improves noise immunity, the device's 6.5 V max VGE(th) and ±20 V rating ensure robust turn-off with 0 V gate bias in well-designed layouts with low common-mode dv/dt.

IHP10T120 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
16 A
Current - Collector Pulsed (Icm):
24 A
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 10A
Power - Max:
138 W
Switching Energy:
1.46mJ
Input Type:
Standard
Gate Charge:
53 nC
Td (on/off) @ 25°C:
45ns/520ns
Test Condition:
610V, 10A, 81Ohm, 15V
Reverse Recovery Time (trr):
115 ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IHP10T120 FAQ

1.How can I place an order for IHP10T120 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHP10T120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHP10T120 reliable?

The price and inventory of IHP10T120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHP10T120 is usually 5 days.

3.What payment methods are accepted for IHP10T120?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHP10T120 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHP10T120?

IHP10T120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHP10T120 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHP10T120?

For technical support, including IHP10T120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHP10T120 requirements.

6.How does Aetrix verify that IHP10T120 is sourced from the original manufacturer or authorized distributors?

All IHP10T120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHP10T120 meets industry standards.

7.What is the process for return or replacement of IHP10T120?

All IHP10T120 units undergo pre-shipment inspection (PSI). If there is an issue with IHP10T120, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHP10T120 part is unused and in its original packaging.

Return procedure for IHP10T120:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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