Infineon Technologies IHW15N120R2

Overview

IHW15N120R2 from Infineon Technologies is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1200 V collector-emitter voltage, 15 A DC collector current at T_C = 100 °C, 1.5 V V_CE(sat) at T_j = 25 °C, and 175 °C maximum junction temperature. It integrates trench and fieldstop technology for soft-switching inductive cooking inverters and resonant converters.

For engineers reviewing the IHW15N120R2 datasheet, IHW15N120R2 pinout, IHW15N120R2 application, or IHW15N120R2 equivalent, key selection criteria include its low 1.45 V diode forward voltage at 15 A/25 °C, tight parameter distribution enabled by fieldstop architecture, rugged 45 A pulsed safe operating area, and JEDEC J-STD-020 qualification for high-reliability power modules.

Technical Context

This RC-IGBT combines an IGBT and anti-parallel diode on a single die using trench-gate and fieldstop layer design, enabling zero-voltage switching (ZVS) in half-bridge resonant topologies. Its monolithic body diode clamps negative V_CE during commutation and exhibits low Q_rr and soft recovery-critical for EMI reduction in 20–100 kHz induction heating systems.

The device features 133 nC total gate charge, 1530 pF input capacitance, and 39 pF reverse transfer capacitance at 25 V, supporting precise gate drive timing. Thermal resistance R_thJC is 0.52 K/W for the IGBT and 0.47 K/W for the diode, ensuring efficient heat extraction via TO-247 mounting under continuous 15 A operation.

Key Specifications

Pinout & Package

Supplied in PG-TO-247-3 package with isolated metal tab, optimized for high-current, high-voltage switching applications requiring mechanical robustness and thermal performance. Pin assignment follows standard TO-247 layout: Collector (C) on tab, Emitter (E) on lead 1, Gate (G) on lead 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IXGN15N120B3 and STGW15H120DF2, the IHW15N120R2 delivers optimal balance of low V_CE(sat), low E_off, and monolithic diode softness-making it the preferred choice for high-efficiency, high-frequency induction heating where thermal and EMI constraints are critical.

Availability

IHW15N120R2 is available at Aetrix Electronics and suitable for induction cooking inverters, resonant DC-DC converters, and industrial induction heating generators requiring stable component supply, long-lifecycle support, and JEDEC-qualified power semiconductors.

Supply support for IHW15N120R2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in high-voltage silicon and SiC power devices.

The IHW15N120R2 belongs to Infineon's Soft Switching Series RC-IGBT product line, engineered specifically for zero-voltage switching topologies in induction heating and resonant conversion where diode integration, ruggedness, and thermal stability are essential.

FAQ

What is the maximum gate-emitter voltage rating for IHW15N120R2?

The absolute maximum DC gate-emitter voltage is ±20 V; transient rating is ±25 V for pulses under 5 ms. Exceeding ±20 V continuously risks gate oxide degradation. The typical gate threshold voltage is 5.8 V, and gate drive circuits must maintain tight voltage regulation-especially during Miller plateau-to avoid unintended turn-on.

Can IHW15N120R2 replace a discrete IGBT + diode pair in existing designs?

Yes-it replaces a 1200 V IGBT and co-packaged fast diode in half-bridge configurations, provided layout accommodates TO-247-3 pinout and thermal interface. The monolithic diode has matched thermal characteristics and lower stray inductance than discrete pairs, improving ZVS consistency-but gate drive timing may require minor adjustment due to differing Q_G and C_iss.

What is the recommended gate resistor value for 50 kHz induction heating operation?

For 50 kHz ZVS operation with T_j ≤ 150 °C, a 14.8 Ω gate resistor is validated per Infineon's dynamic test circuit (Figure E). This yields ~62 ns fall time at 25 °C and balances switching speed against EMI and gate driver stress. Lower values (e.g., 10 Ω) increase dI/dt and risk overshoot; higher values (>22 Ω) degrade ZVS margin.

Is the IHW15N120R2 RoHS compliant and halogen-free?

Yes-the device uses Pb-free lead plating and meets RoHS Directive 2011/65/EU. Infineon confirms full compliance with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and halogen-free status per IEC 61249-2-21, with chlorine ≤900 ppm and bromine ≤900 ppm in homogeneous materials.