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Infineon Technologies IHW15N120R3FKSA1

Part No.:
IHW15N120R3FKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIHW15N120R3FKSA1.pdf
Description:
IGBT TRENCH 1200V 30A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:274

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Product details

Overview

IHW15N120R3FKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant and soft-switching topologies in high-voltage power conversion. It features 1200 V VCE, 15 A rated collector current, 1.48 V VCEsat at 25°C, 175°C maximum junction temperature, and PG-TO247-3 package.

For engineers reviewing the IHW15N120R3FKSA1 datasheet, IHW15N120R3FKSA1 pinout, IHW15N120R3FKSA1 application, or IHW15N120R3FKSA1 equivalent, key selection criteria include its low switching losses in ZVS/ZCS circuits, tight parameter distribution from TRENCHSTOP™ technology, and integrated diode optimized for soft commutation-not hard-switched freewheeling.

Technical Context

This RC-IGBT integrates an anti-parallel diode on the same die, eliminating external diode placement and reducing parasitic inductance in resonant tank circuits. Its positive temperature coefficient of VCEsat enables stable parallel operation without current-sharing resistors.

The device targets high-frequency resonant converters operating up to ~100 kHz, where low Eoff (0.70 mJ at 25°C), fast fall time (46 ns), and controlled tail current minimize conduction and switching loss trade-offs under soft-commutation conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCE1200 V - supports DC bus voltages up to 800 V in 3-phase rectified systems with margin
IC (rated)15 A - continuous conduction capability at Tc = 100°C, suitable for 1–2 kW resonant inverters
VCEsat1.48 V @ 25°C - low conduction loss enabling high efficiency in medium-power ZVS applications
Eoff0.70 mJ @ 25°C - reduced turn-off energy critical for minimizing losses in high-frequency resonant switching
Rth(j-c)0.59 K/W - enables direct heatsink mounting with predictable thermal performance in compact designs
fsw max~100 kHz - supported by low Cies (1165 pF), Cres (32 pF), and fast switching times
Tvjmax175°C - allows sustained operation under transient overloads in induction heating and microwave inverters

Pinout & Package

Supplied in PG-TO247-3 package with isolated mounting hole, standard leadframe layout, and creepage/clearance compliant with IEC 61800-5-1 for 1200 V systems.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side power terminalConnected to DC+ rail; carries full load current and withstands 1200 V blocking
Gate (G)Control inputReceives 15 V drive signal; requires gate resistor (14.6 Ω typical) for controlled dV/dt and EMI management
Emitter (E)Power return and reference nodeServes as common source for IGBT and integrated diode; must be low-inductance connection to minimize voltage spikes

Key Features

FeatureDesign Value
Monolithic body diodeLow VF (1.55 V @ 25°C) and soft recovery tailored for zero-current switching-no external diode needed
TRENCHSTOP™ technologyTight VCEsat distribution (±0.1 V) and rugged short-circuit withstand (10 µs @ 175°C) improve system reliability
Positive VCEsat tempcoEnables natural current sharing in paralleled configurations without external balancing components
JEDEC-qualifiedValidated for industrial inverter applications per JESD47 stress testing-supports long-term field deployment

Applications

Induction Cooking SystemsInverterized Microwave Ovens

Use Scenario: High-frequency (20–50 kHz) half-bridge resonant inverter driving series-resonant LC tank.

IC Role / Device Role / Timing Role: Main switching device in ZVS topology; handles 1–3 kW load with integrated diode conducting reverse current during dead-time.

Use Value: Eliminates discrete diode, reduces PCB area and stray inductance, and improves thermal coupling between switch and diode for consistent soft-commutation behavior.

Use Scenario: Resonant inverter powering magnetron with variable power control via frequency modulation.

IC Role / Device Role / Timing Role: High-voltage switch in asymmetrical half-bridge; operates with phase-shifted gate drive to achieve ZVS across wide load range.

Use Value: Low Eoff and stable VCEsat over temperature ensure consistent output power regulation and reduced audible noise from magnetostriction.

Resonant DC-DC ConvertersSoft-Switched UPS Modules

Use Scenario: LLC resonant converter stage stepping down 400 V DC bus to 48 V/12 V for telecom or server power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in full-bridge configuration; conducts during capacitive zero-voltage turn-on and inductive zero-current turn-off.

Use Value: Integrated diode with soft recovery minimizes reverse recovery losses and EMI generation during transition intervals.

Use Scenario: Online double-conversion UPS with high-efficiency inverter stage operating in burst-mode or variable-frequency soft-switching mode.

IC Role / Device Role / Timing Role: Output inverter switch handling bidirectional energy flow during battery backup and grid re-synchronization.

Use Value: 175°C Tvjmax and robust SOA support extended overload tolerance during grid faults and brownouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW15N120H3Same 1200 V/15 A rating but uses H3 technology; lower VCEsat (1.35 V) and higher Cres (42 pF)Better conduction loss, slightly slower turn-off; suited for lower-frequency (<50 kHz) hard-switched PFC stagesSelect when priority is lowest conduction loss over switching speed in fixed-frequency topologies
IRGP4062DPBF1200 V/16 A standard IGBT + separate ultrafast diode; higher VCEsat (1.8 V), no monolithic integrationRequires external diode layout; higher layout complexity and parasitic inductance in resonant tanksChoose only if existing design uses discrete diode layout and cannot accommodate RC-IGBT footprint

Compared with IKW15N120H3 and IRGP4062DPBF, IHW15N120R3FKSA1 delivers superior soft-switching performance due to its monolithic diode's matched thermal and dynamic characteristics, lower Eoff, and optimized capacitance profile for resonant operation-making it the preferred choice for ZVS/ZCS inverters above 30 kHz.

Availability

IHW15N120R3FKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, inverterized microwave ovens, and resonant DC-DC converters requiring stable component supply and long-lifecycle support.

Supply support for IHW15N120R3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's Resonant Switching Series RC-IGBT product line, engineered specifically for high-efficiency, high-frequency soft-switching inverters where integrated diode timing and thermal matching are critical.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

A 14.6 Ω gate resistor is specified in the datasheet for standardized switching characterization (Eoff, td(off)). Using >22 Ω increases turn-off delay and Eoff significantly-especially at 175°C-risking shoot-through in bridge configurations. For ZVS applications, 10–15 Ω balances dV/dt control and loss minimization.

Can IHW15N120R3FKSA1 replace a standard IGBT + external diode in an existing design?

Yes, but only if the PCB layout accommodates the PG-TO247-3 footprint and the gate drive circuit accounts for the integrated diode's forward voltage and recovery behavior. The monolithic diode eliminates external diode selection but requires verification of dead-time settings to avoid cross-conduction during soft-commutation transitions.

Is this device suitable for hard-switched applications like motor drives?

No-it is not optimized for hard-switching. Its monolithic diode has soft recovery but higher VF than dedicated ultrafast diodes, and its Eoff rises sharply at high Tvj. In hard-switched motor drives, standard IGBTs like IKW40N120H3 offer better overall efficiency and ruggedness under short-circuit conditions.

Does the "R3" suffix indicate RoHS compliance and lead-free plating?

Yes-the "R3" suffix denotes Infineon's RoHS-compliant, lead-free lead plating per JEDEC J-STD-609. The device meets EU RoHS Directive 2011/65/EU and is compatible with standard SnAgCu reflow profiles (peak 260°C, 10 s).

IHW15N120R3FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
30 A
Current - Collector Pulsed (Icm):
45 A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 15A
Power - Max:
254 W
Switching Energy:
700µJ (off)
Input Type:
Standard
Gate Charge:
165 nC
Td (on/off) @ 25°C:
-/300ns
Test Condition:
600V, 15A, 14.6Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

IHW15N120R3FKSA1 FAQ

1.How can I place an order for IHW15N120R3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW15N120R3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW15N120R3FKSA1 reliable?

The price and inventory of IHW15N120R3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW15N120R3FKSA1 is usually 5 days.

3.What payment methods are accepted for IHW15N120R3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW15N120R3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW15N120R3FKSA1?

IHW15N120R3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW15N120R3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW15N120R3FKSA1?

For technical support, including IHW15N120R3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW15N120R3FKSA1 requirements.

6.How does Aetrix verify that IHW15N120R3FKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW15N120R3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW15N120R3FKSA1 meets industry standards.

7.What is the process for return or replacement of IHW15N120R3FKSA1?

All IHW15N120R3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW15N120R3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW15N120R3FKSA1 part is unused and in its original packaging.

Return procedure for IHW15N120R3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IHW15N120R3FKSA1 Tags

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