Infineon Technologies IHW20N120R2

Overview

IHW20N120R2 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for soft-switching inductive loads at 1200 V and 20 A continuous current. It features trench-stop/field-stop technology, 1.55 V V_CE(sat) at 25°C, 175°C max junction temperature, and PG-TO-247-3 package. Used in high-efficiency induction cooking systems requiring low EMI and robust negative voltage clamping.

For engineers reviewing the IHW20N120R2 datasheet, IHW20N120R2 pinout, IHW20N120R2 application, or IHW20N120R2 equivalent, key selection criteria include its integrated body diode forward voltage (1.45 V @ 20 A, 25°C), tight parameter distribution, positive V_CE(sat) temperature coefficient for parallel operation, and JEDEC-qualified ruggedness for 175°C operation.

Technical Context

This RC-IGBT integrates a fast, low-V_F body diode on the same die as the IGBT, enabling bidirectional conduction without external antiparallel diodes. Its fieldstop trench structure delivers stable switching behavior across -40°C to +175°C and supports hard- and soft-switching topologies.

The device exhibits NPT-based positive temperature coefficient in V_CE(sat), allowing stable paralleling without current-sharing resistors. Dynamic parameters-143 nC total gate charge, 1.2 mJ turn-off energy at 25°C, and 2.0 mJ at 175°C-are characterized under standardized inductive load conditions (V_CC = 600 V, R_G = 15 Ω, L_σ = 180 nH).

Key Specifications

Pinout & Package

Supplied in PG-TO-247-3 package with isolated mounting flange. Pin assignment verified per Infineon's official datasheet Rev. 1.4: three terminals-Collector (C), Gate (G), Emitter (E)-arranged linearly with Collector tab electrically connected to case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IXGN20N120B3 and STGW20H120DF, the IHW20N120R2 uniquely combines 175°C operation, monolithic integration, and JEDEC qualification-making it optimal for compact, high-reliability induction heating where thermal and EMI constraints dominate.

Availability

IHW20N120R2 is available at Aetrix Electronics and suitable for induction cooking systems, resonant DC-DC converters, and soft-switched motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IHW20N120R2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

The Soft Switching Series targets high-frequency resonant topologies in consumer and industrial power conversion, emphasizing low-loss switching, integrated functionality, and rugged thermal performance.

FAQ

What is the maximum gate-emitter voltage rating for safe operation?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient rating up to ±25 V for pulses less than 5 ms. Exceeding ±20 V continuously risks gate oxide degradation. Infineon recommends using 15 V turn-on and 0 V or –5 V turn-off bias to ensure reliable switching and minimize Miller-induced false triggering.

Does the body diode have soft recovery characteristics?

Yes-the monolithic body diode exhibits soft reverse recovery with peak reverse recovery dv/dt < 15 V/ns and low recovered charge (Q_rr ≈ 120 nC at I_F = 20 A, T_j = 125°C), confirmed in Infineon's characterization data. This minimizes voltage overshoot and EMI in ZVS circuits without requiring external snubbers.

Can IHW20N120R2 be paralleled without external emitter resistors?

Yes-its NPT-based positive temperature coefficient in V_CE(sat) ensures self-balancing current sharing across paralleled devices. Testing shows <±5% current imbalance at 20 A per device with matched gate drive and symmetrical layout, eliminating need for emitter resistors in most industrial implementations.

Is the PG-TO-247-3 package lead-free and RoHS compliant?

Yes-the device uses Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The soldering temperature rating is 260°C for 10 seconds at 1.6 mm from case, validated per J-STD-020 moisture sensitivity level 1, ensuring compatibility with standard lead-free reflow profiles.