Infineon Technologies IHW20N120R5XKSA1

Overview

IHW20N120R5XKSA1 from Infineon is a 1200 V, 20 A reverse-conducting IGBT with monolithic body diode, optimized for resonant and soft-switching topologies in industrial power converters. It features 1.55 V V_CE(sat) at 25°C, 175°C max junction temperature, TRENCHSTOP™ technology, and PG-TO247-3 package. Used in inductive cooking and inverterized microwave ovens where low EMI and robust commutation are critical.

For engineers reviewing the IHW20N120R5XKSA1 datasheet, IHW20N120R5XKSA1 pinout, IHW20N120R5XKSA1 application, or IHW20N120R5XKSA1 equivalent, key selection criteria include V_CE(sat) temperature stability, integrated diode forward voltage (1.60 V @ 20 A), turn-off energy (0.75 mJ @ 25°C), gate charge (170 nC), and thermal resistance (0.52 K/W j-c).

Technical Context

This RC-IGBT integrates a co-packaged, low-V_F body diode on a single die-enabling zero-voltage switching (ZVS) in LLC and phase-shifted full-bridge topologies. Its positive V_CE(sat) temperature coefficient ensures stable current sharing during parallel operation.

The device uses TRENCHSTOP™ trench-gate field-stop structure to achieve tight parameter distribution, high ruggedness, and low EMI. Switching behavior is characterized under standardized inductive load conditions (V_CC = 600 V, I_C = 20 A, R_G(on/off) = 10 Ω), with turn-off delay (260 ns @ 25°C) and fall time (50 ns @ 25°C) explicitly specified.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3 package with isolated mounting screw hole and electrically active backside collector. Package outline conforms to JEDEC TO-247 standard with 2.54 mm lead pitch and 15.8 mm body height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IXGN20N120A3 and STGW20H120DF2, IHW20N120R5XKSA1 delivers lower total switching + conduction loss in ZVS topologies due to its monolithic diode softness and tighter V_CE(sat) temperature stability-critical for thermally dense inductive heating modules.

Availability

IHW20N120R5XKSA1 is available at Aetrix Electronics and suitable for inductive cooking systems, inverterized microwave ovens, and resonant DC-DC converters requiring stable component supply, long-lifecycle support, and industrial-grade qualification.

Supply support for IHW20N120R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's Resonant Switching Series of RC-IGBTs-designed specifically for high-efficiency, low-EMI resonant converters in consumer and industrial power electronics.

FAQ

What is the maximum allowable gate-emitter voltage for IHW20N120R5XKSA1?

The absolute maximum transient gate-emitter voltage is ±25 V for pulses ≤10 µs with duty cycle <0.01. Continuous operation must remain within ±20 V. Exceeding these limits risks irreversible gate oxide damage, especially at elevated junction temperatures. Gate drive circuits should include clamping (e.g., TVS diodes) and low-inductance layout to suppress ringing-induced overshoot.

Can IHW20N120R5XKSA1 be paralleled for higher current capacity?

Yes-its positive V_CE(sat) temperature coefficient enables stable current sharing without external ballasting resistors. Successful parallel operation requires matched gate drive impedance (≤1 Ω difference), symmetrical PCB layout, and common-source emitter routing to minimize dynamic current imbalance. Thermal coupling between devices must also be uniform to avoid thermal runaway.

Does the monolithic body diode replace an external anti-parallel diode in all soft-switching applications?

It replaces external diodes in most ZVS resonant topologies (e.g., LLC, PSFB) where reverse recovery performance and layout compactness are critical. However, in hard-switched applications with high di/dt or unidirectional current, an external ultrafast diode may still be preferred for optimized reverse recovery charge (Q_rr) and peak reverse recovery current (I_RRM) control.

What is the recommended gate resistor value for optimal switching performance?

A 10 Ω gate resistor is validated in the datasheet for turn-on/turn-off under 600 V, 20 A inductive load testing. Lower values (5–8 Ω) reduce switching time but increase EMI and gate driver stress; higher values (15–22 Ω) improve EMI and reduce dV/dt but raise E_off by ~15%. Layout-dependent stray inductance must be minimized regardless of R_G choice.