Infineon Technologies IHW20N135R3FKSA1

Overview

IHW20N135R3FKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant and soft-switching topologies. It features 1350 V collector-emitter breakdown voltage, 20 A DC collector current at Tc = 100°C, 1.6 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and PG-TO247-3 package. It is used in high-efficiency inductive cooking systems requiring low EMI and rugged commutation.

For engineers reviewing the IHW20N135R3FKSA1 datasheet, IHW20N135R3FKSA1 pinout, IHW20N135R3FKSA1 application, or IHW20N135R3FKSA1 equivalent, key selection criteria include V_CE rating, soft-commutation diode performance, thermal resistance (0.48 K/W j-c), gate charge (195 nC), and turn-off energy (1.30 mJ at 25°C).

Technical Context

This RC-IGBT integrates a fast, low-V_F body diode optimized exclusively for soft commutation-no hard-switching capability. Its TRENCHSTOP™ technology delivers tight parameter distribution, positive V_CE(sat) temperature coefficient (1.60 → 1.90 V from 25°C to 175°C), and stable behavior up to 175°C junction temperature.

The device supports resonant ZVS operation with low output capacitance (C_oes = 55 pF) and reverse transfer capacitance (C_res = 45 pF), enabling reduced switching losses and EMI. Gate drive requires ±20 V steady-state and ±25 V transient compliance, with 5.8 V typical V_GE(th).

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab; collector connected to backside metal).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Compared with IXGN20N120B3 and STGW20H130DF, IHW20N135R3FKSA1 offers the highest voltage rating (1350 V), lowest V_CE(sat), and lowest V_F among RC-IGBTs in this current class-making it optimal for margin-critical 1000 V+ resonant systems where diode conduction and voltage headroom dominate trade-offs.

Availability

IHW20N135R3FKSA1 is available at Aetrix Electronics and suitable for inductive cooking systems, resonant DC-DC converters, and inverterized microwave ovens requiring stable component supply and long-term industrial availability.

Supply support for IHW20N135R3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's Resonant Switching Series of RC-IGBTs, engineered specifically for zero-voltage switching topologies in induction heating and high-efficiency SMPS-emphasizing diode softness, voltage margin, and thermal ruggedness over general-purpose switching.

FAQ

Is IHW20N135R3FKSA1 suitable for hard-switching applications?

No. The integrated body diode is explicitly designed for soft commutation only, as stated in the datasheet. Hard-switching causes excessive diode reverse recovery stress and premature failure. This part must be used in ZVS or quasi-resonant circuits where diode turn-off occurs near zero current.

What is the maximum recommended gate resistor value for reliable turn-off?

Based on the datasheet's dynamic test conditions (RG(off) = 15 Ω), and confirmed by turn-off delay time increase in Figure 10, RG(off) should not exceed 22 Ω to maintain td(off) < 500 ns at 175°C. Higher values risk incomplete turn-off during high-temperature operation.

Does the backside collector connection require electrical isolation from the heatsink?

Yes. The backside metal is electrically connected to Pin 2 (collector). Mounting requires electrically isolating thermal interface material (e.g., ceramic washer or silicone pad with dielectric strength ≥2 kV) unless the heatsink is floating or referenced to high-side potential.

Can IHW20N135R3FKSA1 replace a standard IGBT in an existing 600 V inverter design?

No. Its 1350 V rating reflects overvoltage capability-not compatibility with lower-bus designs. Using it in a 600 V system introduces unnecessary cost and gate drive overhead; its optimized diode and saturation characteristics deliver value only in resonant topologies operating near its rated voltage.