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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW20N135R5XKSA1

Name: IHW20N135R5XKSA1
Brand: Infineon Technologies
SKU: IHW20N135R5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW20N135R5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW20N135R5XKSA1.pdf

Description:: IGBT 1350V 40A TO247-3

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Product details

Overview

IHW20N135R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant and soft-switching topologies in high-voltage power conversion. It delivers 1350 V breakdown voltage, 20 A rated collector current at Tc = 100°C, 1.65 V V_CE(sat) at 25°C, and operates up to 175°C junction temperature in PG-TO247-3 package - enabling robust performance in induction heating and microwave inverter stages.

For engineers reviewing the IHW20N135R5XKSA1 datasheet, IHW20N135R5XKSA1 pinout, IHW20N135R5XKSA1 application, or IHW20N135R5XKSA1 equivalent, key selection criteria include its low EMI profile, positive temperature coefficient of V_CE(sat) for stable parallel operation, monolithic diode optimized for soft commutation, and JESD-022 qualification for industrial reliability.

Technical Context

This RC-IGBT integrates a co-packaged, low-V_F body diode on a single die using TRENCHSTOP™ technology - eliminating external anti-parallel diode requirements in resonant LLC and ZVS converters. Its tight parameter distribution and temperature-stable V_CE(sat) enable predictable conduction loss across -40°C to +175°C.

The device features 1360 pF input capacitance (C_ies), 34 pF reverse transfer capacitance (C_res), and 170 nC total gate charge - supporting controlled turn-on/turn-off dynamics in high-frequency (>50 kHz) switching applications where di/dt and dv/dt management are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1350 V - Enables operation in 1000–1200 V DC-link systems with margin for voltage transients in resonant converters.
I_C (T_c = 100°C)	20 A - Continuous conduction capability at elevated heatsink temperatures typical in sealed induction cooktop enclosures.
V_CE(sat) @ 25°C	1.65 V - Low conduction loss reduces thermal stress and improves efficiency in high-duty-cycle soft-switching stages.
T_vj(max)	+175°C - Supports sustained operation under peak-load conditions without derating in compact thermal designs.
R_th(j-c)	0.52 K/W - Enables direct mounting to heatsinks with predictable thermal resistance for accurate junction temperature estimation.
E_off @ 175°C	2.00 mJ - Quantified switching loss at max junction temperature supports accurate thermal modeling in high-temp environments.
Q_G	170 nC - Determines gate driver power requirement and influences switching speed control via external R_G.

Pinout & Package

Supplied in PG-TO247-3 package with isolated tab (collector-connected), standard three-terminal configuration for high-power discrete mounting.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to heatsink tab; carries full load current and withstands 1350 V blocking; requires insulated mounting in non-isolated designs.
Gate (G)	Control input	High-impedance MOS-controlled terminal requiring ±20 V absolute max rating; 170 nC Q_G dictates gate driver sizing.
Emitter (E)	Power return and reference node	Common reference for gate drive and current sensing; carries both IGBT and body diode current; must be low-inductance layout.

Key Features

Feature	Design Value
Monolithic body diode	Integrated low-V_F diode (1.65 V @ 20 A, 25°C) eliminates external anti-parallel diode and reduces PCB area in resonant half-bridge legs.
Positive V_CE(sat) tempco	Enables stable current sharing when paralleling multiple IHW20N135R5XKSA1 devices without active current balancing circuitry.
Low EMI design	Optimized C_res/C_ies ratio (34/1360 pF) and controlled switching transitions reduce radiated emissions in EMI-sensitive kitchen appliances.
JESD-022 qualification	Validated for reliability in high-humidity, thermally cycled environments typical of consumer induction cooking and microwave oven lifecycles.

Applications

Induction Cooking Systems

Inverterized Microwave Ovens

Use Scenario: High-frequency (20–100 kHz) resonant half-bridge driving planar coil for localized heating in domestic cooktops.

IC Role / Device Role / Timing Role: Main switching device in resonant inverter leg; handles bidirectional current via integrated body diode during ZVS transitions.

Use Value: 1350 V rating accommodates 900 V DC-link spikes; 175°C T_vj(max) ensures reliability under sustained pan-detection overload conditions.

Use Scenario: 2.45 GHz magnetron power supply using phase-shifted full-bridge with soft switching.

IC Role / Device Role / Timing Role: High-side switch in resonant inverter stage; body diode conducts reverse current during zero-voltage turn-on.

Use Value: Low EMI profile meets CISPR 11 Class B limits; monolithic diode eliminates timing mismatch risk between discrete IGBT/diode pairs.

Resonant LLC Converters

Soft-Switching Industrial Inverters

Use Scenario: Primary-side switch in 1–3 kW telecom/server PSU LLC resonant converters operating above 100 kHz.

IC Role / Device Role / Timing Role: Resonant switching element with body diode conducting freewheeling current during dead-time intervals.

Use Value: Tight V_CE(sat) distribution (±0.1 V) ensures consistent conduction loss across production batches in high-volume PSUs.

Use Scenario: Motor drive inverter stage for HVAC compressors requiring ZVS at 10–30 kHz switching frequencies.

IC Role / Device Role / Timing Role: RC-IGBT replacing traditional IGBT+diode pair in bridge arms to simplify layout and improve thermal coupling.

Use Value: R_th(j-c) = 0.52 K/W enables direct heatsink mounting with predictable thermal rise; RoHS/halogen-free compliance meets industrial environmental mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN20N120A3	1200 V rating, higher V_CE(sat) (2.1 V), no monolithic diode - requires external ultrafast diode.	Limited to ≤1000 V DC-link; less suitable for high-transient resonant systems requiring 1350 V margin.	Select only if system DC-link is strictly ≤900 V and external diode integration is acceptable.
STMicroelectronics STGW20H130DF	1300 V rating, 20 A rating, integrated diode but higher V_F (2.0 V @ 20 A), larger C_res (52 pF).	Higher conduction loss and EMI sensitivity limit use in high-frequency induction heating where efficiency >92% is required.	Preferable only in cost-sensitive, lower-frequency (<40 kHz) soft-switching applications with relaxed EMI targets.

Compared with IXGN20N120A3 and STGW20H130DF, the IHW20N135R5XKSA1 offers superior voltage margin, lower conduction loss, and tighter switching parameter distribution - making it optimal for high-reliability, high-frequency resonant systems where thermal stability and EMI control are critical.

Availability

IHW20N135R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, inverterized microwave ovens, and resonant LLC converters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IHW20N135R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and consumer markets.

The Resonant Switching Series - including IHW20N135R5XKSA1 - was engineered specifically for high-efficiency, high-reliability soft-switching topologies in induction heating and microwave inverter applications.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) = 10 Ω for characterization at 175°C. For reliable turn-off with margin against Miller-induced false triggering, Infineon recommends RG(off) ≤ 15 Ω with gate driver capable of sinking ≥2 A peak current. Higher values increase td(off) and E_off, especially at elevated temperature.

Can IHW20N135R5XKSA1 replace a standard IGBT + external diode in an existing design?

Yes - the monolithic body diode replaces the external anti-parallel diode in resonant half-bridge configurations. Layout changes are required: eliminate diode footprint, verify gate loop inductance remains low, and confirm heatsink isolation matches the collector-tab connection in PG-TO247-3.

Is the body diode rated for hard-switching operation?

No - the datasheet explicitly states the body diode is "designed for soft commutation only." Hard-switching (e.g., forced commutation in PWM inverters) causes excessive diode recovery losses and potential failure; it must operate only in ZVS/ZCS conditions.

What thermal interface material thickness is validated for R_th(j-c) = 0.52 K/W?

Infineon's thermal test condition assumes 100 µm bond line thickness of thermal interface material (TIM) with 1.5 W/m·K conductivity. Deviations beyond ±25 µm or TIM conductivity <1.0 W/m·K will increase measured R_th(j-c) and require derating of I_C accordingly.

IHW20N135R5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1350 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 1.85V @ 15V, 20A

Power - Max:: 288 W

Switching Energy:: 950µJ (off)

Input Type:: Standard

Gate Charge:: 170 nC

Td (on/off) @ 25°C:: -/235ns

Test Condition:: 600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW20N135R5XKSA1 FAQ

1.How can I place an order for IHW20N135R5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW20N135R5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW20N135R5XKSA1 reliable?

The price and inventory of IHW20N135R5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW20N135R5XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW20N135R5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW20N135R5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW20N135R5XKSA1?

IHW20N135R5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW20N135R5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW20N135R5XKSA1?

For technical support, including IHW20N135R5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW20N135R5XKSA1 requirements.

6.How does Aetrix verify that IHW20N135R5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW20N135R5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW20N135R5XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW20N135R5XKSA1?

All IHW20N135R5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW20N135R5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW20N135R5XKSA1 part is unused and in its original packaging.

Return procedure for IHW20N135R5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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