Infineon Technologies IHW20N140R5LXKSA1

Overview

IHW20N140R5LXKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1400 V collector-emitter voltage and 20 A continuous collector current at Tc = 100 °C. It features low V_CE(sat) (1.7–2.0 V), soft commutation capability via integrated diode, and positive temperature coefficient enabling stable paralleling. Used in high-efficiency resonant topologies of induction cookers and microwave ovens.

For engineers reviewing the IHW20N140R5LXKSA1 datasheet, IHW20N140R5LXKSA1 pinout, IHW20N140R5LXKSA1 application, or IHW20N140R5LXKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, soft turn-off energy (0.061–0.072 mJ), diode forward voltage (1.6–1.85 V), ruggedness up to 175 °C junction, and TO-247-3 package thermal resistance (R_th(j-c) = 0.71 K/W).

Technical Context

This RC-IGBT integrates an optimized fast-recovery diode on the same die, eliminating external anti-parallel diode requirements in half-bridge resonant inverters. Its monolithic structure ensures matched thermal behavior and tight parameter distribution across V_CE(sat), V_F, and switching timing.

The device employs field-stop trench gate technology with low output capacitance (C_oes = 28 pF) and reverse transfer capacitance (C_res = 22 pF), enabling low EMI and robust dV/dt immunity (<1 kV/µs). Gate charge is 125 nC at V_CC = 1120 V, IC = 20 A, supporting efficient gate driving with standard 15 V logic.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3-STD-NN2.5 package with isolated tab, standard 3-pin through-hole outline. Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter. The emitter terminal serves as common reference for both IGBT and integrated diode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Compared with IXGN20N140A and STGW20H130DF, IHW20N140R5LXKSA1 delivers lower conduction loss (1.7 V vs. ≥2.2 V), lower turn-off energy (0.061 mJ vs. ≥0.085 mJ), and true monolithic integration-making it uniquely suitable for high-frequency resonant heating where diode softness and thermal matching are critical.

Availability

IHW20N140R5LXKSA1 is available at Aetrix Electronics and suitable for induction cooker designs, microwave oven inverters, industrial induction heating systems, and UPS output stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IHW20N140R5LXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's TRENCHSTOP™ RC-IGBT product line, engineered specifically for resonant and soft-switching topologies in consumer and industrial heating applications where integrated diode softness, thermal stability, and low EMI are mandatory.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω gate resistor is validated in the datasheet for turn-off delay (150 ns) and fall time (1035 ns) at 20 A. Increasing R_G beyond 22 Ω risks exceeding safe SOA limits under high dV/dt; values below 5 Ω require careful PCB layout to avoid oscillation due to low gate impedance and 125 nC Q_G.

Can IHW20N140R5LXKSA1 replace standard IGBTs without circuit modification?

No. Its monolithic diode shares the emitter terminal, requiring revalidation of gate drive referencing and dead-time settings. Unlike discrete IGBT+diode pairs, this part conducts reverse current through the same emitter pin-altering current sensing and protection logic in existing designs.

Is the body diode suitable for continuous forward conduction?

Yes-the integrated diode is rated for 40 A continuous forward current at Tc = 100 °C and designed for soft commutation, not just flyback. Its V_F of 1.6–1.85 V and 175 °C max junction temperature support sustained bidirectional conduction in resonant half-bridges.

Does this part support paralleling, and what layout considerations apply?

Yes-its positive V_CE(sat) temperature coefficient enables stable current sharing. Layout must ensure symmetrical gate drive paths (≤5 cm trace length difference), matched emitter inductance (≤13 nH), and uniform heatsink contact pressure across all devices to prevent thermal runaway.