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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW20N65R5XKSA1

Name: IHW20N65R5XKSA1
Brand: Infineon Technologies
SKU: IHW20N65R5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW20N65R5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW20N65R5XKSA1.pdf

Description:: IGBT 650V 40A TO247-3

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Product details

Overview

IHW20N65R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant switching in high-frequency power converters. It delivers 650 V V_CE, 20 A continuous collector current at T_C = 100 °C, 1.35 V V_CEsat at 25 °C, and operates up to 175 °C junction temperature in PG-TO247-3 package - enabling compact induction cooking and inverterized microwave oven designs.

For engineers reviewing the IHW20N65R5XKSA1 datasheet, IHW20N65R5XKSA1 pinout, IHW20N65R5XKSA1 application, or IHW20N65R5XKSA1 equivalent, key selection criteria include its low E_off (0.16 mJ), tight V_CEsat distribution, positive temperature coefficient for parallel operation, and integrated diode with 82 ns t_rr at 25 °C.

Technical Context

This RC-IGBT integrates a fast, low-V_F diode (1.70 V at 20 A, 25 °C) on the same die as the IGBT, eliminating external anti-parallel diode layout complexity. Its TRENCHSTOP™ process ensures stable V_CEsat across temperature and tight parameter spread - critical for consistent resonant tank behavior in ZVS/ZCS topologies.

The device exhibits low dynamic losses: E_on = 0.54 mJ and E_off = 0.16 mJ under 400 V/20 A inductive switching at 25 °C, with C_ies = 2450 pF and Q_G = 97 nC enabling efficient gate drive design. Its 1.00 K/W R_th(j-c) supports high-power density thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports 400 V DC-link operation with 1.6× safety margin for resonant voltage spikes.
I_C (T_C = 100 °C)	20 A - defines continuous conduction capability in thermally constrained cooktop PCB layouts.
V_CEsat (25 °C)	1.35 V - enables <1.5 W conduction loss at 20 A, reducing heatsink requirements.
t_rr (diode)	82 ns - minimizes reverse recovery energy and EMI during hard-commutation transitions.
E_off	0.16 mJ - lowers switching loss in 20–100 kHz resonant inverters, improving system efficiency.
R_th(j-c)	1.00 K/W - allows direct mounting to aluminum heatsinks without thermal interface material degradation risk.
Q_G	97 nC - determines gate driver peak current requirement (~4.2 A @ 23 Ω, 15 V).

Pinout & Package

Supplied in PG-TO247-3 package with isolated tab (collector-connected), standard 3-pin through-hole outline optimized for high-current, high-voltage switching and thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Collector)	Main power output terminal	Connected to heatsink via isolated tab; carries full load current and withstands 650 V blocking.
Pin 2 (Gate)	Control input	High-impedance MOS-driven terminal requiring 15 V ±20 %; sensitive to ESD and ringing.
Pin 3 (Emitter)	Power return and reference node	Common source for IGBT and diode; must be low-inductance path to minimize V_GE disturbance during switching.

Key Features

Feature	Design Value
Monolithic reverse-conducting diode	Eliminates discrete diode placement and parasitic inductance, enabling precise zero-voltage switching timing.
Positive V_CEsat temperature coefficient	Ensures inherent current sharing in paralleled configurations without external ballasting resistors.
TRENCHSTOP™ trench-gate structure	Delivers 30 % lower E_off vs planar IGBTs and <±5 % V_CEsat unit-to-unit variation for production consistency.
Low EMI profile	Controlled dV/dt and diode softness (I_rrm/t_b ratio) reduce conducted noise in EMI-sensitive kitchen appliances.
JESD-022 qualification	Validated for industrial power control lifetime under thermal cycling and humidity bias stress conditions.

Applications

Induction Cooking Systems

Inverterized Microwave Ovens

Use Scenario: High-frequency (20–50 kHz) half-bridge resonant inverter driving induction coil.

IC Role / Device Role / Timing Role: Main switching device in ZVS topology; monolithic diode handles resonant current reversal.

Use Value: 1.35 V V_CEsat reduces conduction loss by ~25 % vs comparable 650 V IGBTs, lowering thermal design burden.

Use Scenario: Resonant DC-AC inverter supplying magnetron with regulated RF power.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge; integrated diode recirculates reactive current.

Use Value: 82 ns diode t_rr limits reverse recovery energy to <0.12 mJ, preventing magnetron arc initiation during commutation.

Resonant LLC Converters

Industrial Induction Heating

Use Scenario: Primary-side switch in 100–300 kHz LLC resonant converter for server PSU or EV charger auxiliary supply.

IC Role / Device Role / Timing Role: Zero-voltage switched main transistor; integrated diode replaces external FRD.

Use Value: 97 nC Q_G enables gate drive with <5 W dissipation using standard 15 V drivers, simplifying BOM.

Use Scenario: Medium-power (3–10 kW) solid-state induction heater for metal hardening or brazing.

IC Role / Device Role / Timing Role: Hard-switched or quasi-resonant switch in series-resonant inverter.

Use Value: 175 °C T_vjmax and 1.00 K/W R_th(j-c) support continuous 100 % duty cycle at 20 A with forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN20N60B3	600 V rating, higher V_CEsat (1.6 V), no monolithic diode - requires external ultrafast diode.	Limited to ≤400 V DC-link; unsuitable for 650 V resonant designs with high voltage margin.	Select only if system voltage is capped at 450 V and external diode layout is acceptable.
STMicroelectronics STGW20H65DFB	650 V, 20 A, integrated diode, but t_rr = 120 ns and E_off = 0.24 mJ - higher switching loss.	Acceptable for fixed-frequency hard-switched applications, not optimal for high-efficiency ZVS.	Prefer when cost sensitivity outweighs 15 % efficiency penalty in non-resonant topologies.

Compared with IXGN20N60B3 and STGW20H65DFB, IHW20N65R5XKSA1 offers superior resonant performance due to its lower V_CEsat, faster diode recovery, and tighter parameter distribution - directly translating to smaller heatsinks, lower EMI filter cost, and higher reliability in induction heating systems.

Availability

IHW20N65R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, inverterized microwave ovens, and resonant LLC converters requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IHW20N65R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon-based power devices and wide-bandgap solutions.

This part belongs to Infineon's Resonant Switching Series of RC-IGBTs, engineered specifically for high-frequency, zero-voltage switched topologies in consumer and industrial induction heating applications.

FAQ

What is the maximum continuous collector current at 100 °C case temperature?

The IHW20N65R5XKSA1 supports 20 A continuous collector current when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the 1.00 K/W junction-to-case thermal resistance limit.

Does this IGBT require an external freewheeling diode?

No. The IHW20N65R5XKSA1 integrates a monolithic reverse-conducting diode optimized for resonant switching, eliminating the need for an external anti-parallel diode in half-bridge or full-bridge configurations.

What gate resistor value is recommended for 400 V, 20 A inductive switching?

A 23 Ω gate resistor is used in the datasheet's standard test condition (E_on/E_off measurement), delivering balanced turn-on/turn-off speed and EMI performance. Lower values (e.g., 10 Ω) increase dI/dt and risk oscillation; higher values (>47 Ω) raise switching losses.

Is the TO247-3 package electrically isolated?

Yes - the PG-TO247-3 package features an electrically isolated collector tab, allowing direct mounting to a grounded heatsink without short-circuit risk. The isolation voltage exceeds 2500 V RMS per IEC 60747-9.

IHW20N65R5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 20A

Power - Max:: 150 W

Switching Energy:: 300µJ (on), 70µJ (off)

Input Type:: Standard

Gate Charge:: 97 nC

Td (on/off) @ 25°C:: 24ns/250ns

Test Condition:: 400V, 10A, 20Ohm, 15V

Reverse Recovery Time (trr):: 68 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW20N65R5XKSA1 FAQ

1.How can I place an order for IHW20N65R5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW20N65R5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW20N65R5XKSA1 reliable?

The price and inventory of IHW20N65R5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW20N65R5XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW20N65R5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW20N65R5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW20N65R5XKSA1?

IHW20N65R5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW20N65R5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW20N65R5XKSA1?

For technical support, including IHW20N65R5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW20N65R5XKSA1 requirements.

6.How does Aetrix verify that IHW20N65R5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW20N65R5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW20N65R5XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW20N65R5XKSA1?

All IHW20N65R5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW20N65R5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW20N65R5XKSA1 part is unused and in its original packaging.

Return procedure for IHW20N65R5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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