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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW20T120FKSA1

Name: IHW20T120FKSA1
Brand: Infineon Technologies
SKU: IHW20T120FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW20T120FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW20T120FKSA1.pdf

Description:: IGBT 1200V 40A 178W TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IHW20T120FKSA1 from Infineon Technologies is a 1200 V, 20 A TrenchStop™ and Fieldstop™ IGBT with integrated EmCon™ HE anti-parallel diode in a PG-TO-247-3-21 package. It delivers 1.7 V V_CE(sat) at 25°C, 10 µs short-circuit withstand time, and soft, fast-recovery diode behavior optimized for induction heating and resonant soft-switching topologies.

For engineers reviewing the IHW20T120FKSA1 datasheet, IHW20T120FKSA1 pinout, IHW20T120FKSA1 application, or IHW20T120FKSA1 equivalent, key selection criteria include its temperature-stable V_CE(sat) positive coefficient, low EMI due to soft switching, and JEDEC-qualified ruggedness for high-reliability industrial power stages.

Technical Context

This IGBT integrates a co-packaged EmCon™ HE diode with 140 ns trr (25°C) and 950 nC Q_rr, enabling low-loss zero-voltage switching in half-bridge and full-bridge inverters. Its TrenchStop/Fieldstop architecture ensures tight parameter distribution and stable operation up to 150°C junction temperature.

The device supports gate drive with ±20 V V_GE rating and exhibits 120 nC total gate charge (Q_gate) at V_CC = 960 V, I_C = 20 A, making it compatible with standard 15 V gate drivers while minimizing switching losses in high-frequency induction heating systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Supports DC bus voltages up to 960 V in hard- and soft-switched inverters without derating.
I_C (continuous)	20 A at T_C = 100°C - Enables compact heatsink design in 2–5 kW induction heating modules.
V_CE(sat)	1.7 V at T_j = 25°C - Reduces conduction loss by ~15% vs. legacy 1200 V IGBTs with comparable current rating.
t_SC	10 µs at V_GE = 15 V - Allows robust overcurrent protection using fast digital controllers without external desaturation circuitry.
trr / Q_rr	140 ns / 950 nC (25°C) - Minimizes diode reverse recovery energy and associated voltage overshoot in ZVS circuits.
R_thJC (IGBT)	0.7 K/W - Enables thermal interface design with ≤1.5 K/W total system R_thJA for forced-air-cooled enclosures.
P_tot	178 W at T_C = 25°C - Supports high-power density layouts with localized heatsinking on PCB or baseplate.

Pinout & Package

Package: PG-TO-247-3-21 - Three-terminal through-hole package with isolated collector tab, optimized for high-current, high-voltage industrial switching and thermal cycling reliability.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Electrically connected to metal tab; requires insulated mounting and direct thermal path to heatsink.
Gate (G)	Control input	High-impedance MOS-controlled terminal; requires low-inductance gate loop and 28 Ω series resistor for optimal switching balance.
Emiter (E)	Power return and reference node	Serves as common emitter for IGBT and cathode connection point for integrated diode; must be low-impedance ground reference.

Key Features

Feature	Design Value
Soft-switching optimized diode	EmCon™ HE diode with 210 ns trr at 150°C - suppresses voltage spikes and EMI during ZVS transitions in resonant converters.
Positive V_CE(sat) tempco	V_CE(sat) increases with temperature - enables inherent current sharing in paralleled IGBT configurations without external ballasting.
JEDEC qualification	Qualified per J-STD-020 and JESD-022 - validated for solder reflow, humidity, and temperature cycling in industrial-grade power modules.
Low EMI profile	Controlled dV/dt and soft turn-off tail - reduces filter component count and EMI shielding requirements in induction heater EMI Class B designs.
Pb-free & RoHS	Pb-free lead plating - compliant with EU RoHS Directive 2011/65/EU and compatible with lead-free assembly processes.

Applications

Induction Heating Cooktops

Industrial Induction Melting Systems

Use Scenario: High-frequency (20–100 kHz), medium-power (3–8 kW) resonant inverters driving spiral copper coils.

IC Role / Device Role / Timing Role: Main switching device in half-bridge topology; handles ZVS turn-on and controlled diode commutation.

Use Value: Soft diode recovery minimizes coil voltage ringing and improves efficiency >92% at full load with reduced snubber losses.

Use Scenario: 10–50 kW solid-state induction furnaces operating at 1–10 kHz with high thermal cycling duty cycles.

IC Role / Device Role / Timing Role: Primary power switch in phase-shifted full-bridge; manages repetitive short-circuit events during metal loading/unloading.

Use Value: 10 µs t_SC and 150°C T_j,max support reliable operation under transient overloads without desat shutdown.

Resonant LLC Converters

UPS Inverter Stages

Use Scenario: 1–3 kW telecom/server PSU LLC resonant converters requiring low-conduction-loss primary switches.

IC Role / Device Role / Timing Role: Upper-side switch in asymmetric half-bridge; conducts during resonant capacitive discharge phase.

Use Value: Low V_CE(sat) and integrated diode reduce conduction loss by 0.8 W per device vs. discrete IGBT+diode solutions.

Use Scenario: Online double-conversion UPS systems (5–15 kVA) with IGBT-based PWM inverters feeding critical loads.

IC Role / Device Role / Timing Role: Output stage switch in H-bridge; delivers sinusoidal 50/60 Hz output with low THD.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across parallel devices, improving system MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN20N120B3	1200 V, 20 A; higher V_CE(sat) (2.1 V @ 25°C); slower diode (trr = 250 ns)	Higher conduction loss and diode recovery energy limit usable frequency to ≤30 kHz in ZVS designs	Preferable only where cost sensitivity outweighs efficiency and EMI targets.
STMicroelectronics STGW20H120DF2	1200 V, 20 A; lower Q_gate (95 nC); softer diode (trr = 160 ns); no JEDEC qualification	Lacks JEDEC-020/022 validation for long-term thermal cycling reliability in industrial environments	Acceptable for commercial-grade UPS but not recommended for continuous-duty induction heating.

Compared with IXGN20N120B3 and STGW20H120DF2, IHW20T120FKSA1 offers superior soft-switching capability via its EmCon™ HE diode and JEDEC-qualified ruggedness-critical for 24/7 industrial induction systems where diode-induced voltage stress and thermal fatigue dominate failure modes.

Availability

IHW20T120FKSA1 is available at Aetrix Electronics and suitable for induction heating cooktops, industrial melting furnaces, and resonant LLC power supplies requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IHW20T120FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

IHW20T120FKSA1 belongs to Infineon's Soft Switching Series, designed specifically for high-efficiency, low-EMI resonant power conversion in induction heating and industrial motor drives.

FAQ

What is the maximum allowable gate-emitter voltage for IHW20T120FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V, with –5 V to –8 V negative bias advised during off-state to prevent spurious turn-on in noisy industrial environments.

Can IHW20T120FKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of V_CE(sat) enables natural current balancing across paralleled units. Designers must match gate drive loop inductance and use identical gate resistors (e.g., 28 Ω) to ensure simultaneous switching and avoid dynamic current imbalance.

Is the integrated diode suitable for freewheeling in hard-switched PFC stages?

No-the EmCon™ HE diode is optimized for soft-switching recovery, not hard-commutated PFC. Its relatively high Q_rr (950 nC) and moderate trr (140 ns) cause excessive loss and voltage overshoot in discontinuous conduction mode (DCM) PFC. Use dedicated ultrafast diodes instead.

What thermal interface material is recommended for the PG-TO-247-3-21 package?

A silicone-based thermal pad (e.g., Laird Tflex 300 series) or phase-change material (e.g., Henkel Gap Pad VT-200) with 0.5–1.0 W/m·K conductivity and 0.1–0.2 mm thickness is recommended. Avoid epoxy adhesives that impede thermal expansion relief and increase mechanical stress on the die attach.

IHW20T120FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 60 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 20A

Power - Max:: 178 W

Switching Energy:: 1.8mJ (on), 1.5mJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 50ns/560ns

Test Condition:: 600V, 20A, 28Ohm, 15V

Reverse Recovery Time (trr):: 140 ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IHW20T120FKSA1 FAQ

1.How can I place an order for IHW20T120FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW20T120FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW20T120FKSA1 reliable?

The price and inventory of IHW20T120FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW20T120FKSA1 is usually 5 days.

3.What payment methods are accepted for IHW20T120FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW20T120FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW20T120FKSA1?

IHW20T120FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW20T120FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW20T120FKSA1?

For technical support, including IHW20T120FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW20T120FKSA1 requirements.

6.How does Aetrix verify that IHW20T120FKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW20T120FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW20T120FKSA1 meets industry standards.

7.What is the process for return or replacement of IHW20T120FKSA1?

All IHW20T120FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW20T120FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW20T120FKSA1 part is unused and in its original packaging.

Return procedure for IHW20T120FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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