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Infineon Technologies IHW25N120E1XKSA1
- Part No.:
- IHW25N120E1XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IHW25N120E1XKSA1.pdf
- Description:
- IGBT NPT/TRENCH 1200V 50A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:80
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Product details
Overview
IHW25N120E1XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed specifically for resonant soft-switching topologies in high-voltage power conversion. It delivers 1200 V collector-emitter blocking voltage, 25 A DC collector current at TC = 100°C, 1.5 V VCE(sat) at 25°C, and operates up to 150°C junction temperature - enabling compact, efficient induction heating systems.
For engineers reviewing the IHW25N120E1XKSA1 datasheet, IHW25N120E1XKSA1 pinout, IHW25N120E1XKSA1 application, or IHW25N120E1XKSA1 equivalent, key selection criteria include its low EMI profile, tight parameter distribution from TRENCHSTOP™ technology, soft-switching optimized diode forward voltage (1.9 V at 25°C), and validated performance in ZVS/ZCS resonant converters.
Technical Context
This RC-IGBT integrates a co-packaged, low-VF body diode with precisely matched switching characteristics to enable zero-voltage switching (ZVS) and zero-current switching (ZCS) in half-bridge and full-bridge resonant inverters. Its positive temperature coefficient of VCE(sat) ensures stable parallel operation without external current-sharing components.
The device uses Infineon's TRENCHSTOP™ process to achieve low conduction losses (1.5 V @ 25°C, 1.75 V @ 150°C), low gate charge (147 nC), and controlled turn-off energy (0.08 mJ at 105 V, 83 V/µs dv/dt). Thermal resistance Rth(j-c) is 0.54 K/W for both IGBT and diode sections, supporting high-power density thermal design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 1200 V - supports 1000 V DC bus designs with 20% safety margin for industrial resonant converters |
| IC (DC, TC=100°C) | 25 A - defines continuous output capability in induction cooktops and microwave inverters |
| VCE(sat) (Tvj=25°C) | 1.5 V - enables <1.5 W conduction loss at 25 A, critical for thermal management in sealed enclosures |
| VF (diode, Tvj=25°C) | 1.9 V - optimized forward drop minimizes diode conduction loss during soft-commutation intervals |
| Eoff (soft-switching) | 0.08 mJ @ 105 V - quantifies energy dissipated during ZVS turn-off, directly impacting efficiency at 20–100 kHz |
| Rth(j-c) | 0.54 K/W - allows direct heatsink mounting with predictable junction-to-case thermal path for both IGBT and diode |
| QG | 147 nC - determines gate driver power requirement and influences switching speed control via external RG |
Pinout & Package
Supplied in PG-TO247-3 package with isolated metal tab, featuring three terminals: Collector (C), Gate (G), and Emitter (E). The case is electrically connected to the collector, requiring insulated mounting hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | High-side power switch node | Connected to DC bus or resonant tank high side; electrically tied to metal tab - requires isolation from heatsink |
| Gate (G) | Control input for IGBT channel | Receives ±20 V rated drive signal; integrated 8.5 Ω gate resistor simplifies driver design and reduces ringing |
| Emitter (E) | Common reference for IGBT and body diode | Serves as return path for both switch current and diode freewheeling current; low-inductance layout essential for ZVS stability |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic body diode | Integrated low-VF (1.9 V) diode eliminates discrete diode placement error and parasitic inductance in resonant loops |
| TRENCHSTOP™ technology | Enables 1.5 V VCE(sat) and tight parameter spread (±10% VGE(th)), ensuring consistent ZVS timing across production units |
| Positive VCE(sat) tempco | Guarantees inherent current sharing in paralleled configurations without external ballast resistors or active balancing |
| Low EMI signature | Controlled dV/dt (83–166 V/µs) and soft tail current reduce conducted noise, easing EMI filter sizing in consumer-grade appliances |
Applications
| Induction Cooking Systems | Inverterized Microwave Ovens |
|---|---|
|
Use Scenario: High-frequency (20–50 kHz) half-bridge resonant inverter driving spiral coil loads. IC Role / Device Role / Timing Role: RC-IGBT acts as synchronized switch and freewheeling path; body diode conducts during dead-time and ZVS transition. Use Value: 1.9 V diode VF and 0.08 mJ Eoff reduce total switching loss by ≥18% vs. discrete IGBT+diode solutions at 25 kHz. |
Use Scenario: 2.45 GHz magnetron power supply using LLC resonant topology with variable frequency control. IC Role / Device Role / Timing Role: Primary-side switch in resonant tank; body diode handles reverse recovery during phase-shifted commutation. Use Value: Matched IGBT/diode thermal resistance (0.54 K/W) prevents thermal runaway under burst-mode operation with 50% duty cycle. |
| Resonant DC-DC Converters | Soft-Switching UPS Inverters |
|
Use Scenario: Isolated 400 V–48 V bi-directional LLC converter for EV charging infrastructure. IC Role / Device Role / Timing Role: High-side switch in primary bridge; body diode enables natural ZCS turn-on during resonant current reversal. Use Value: 147 nC QG allows precise gate timing control with standard 2 A peak drivers, reducing gate drive complexity. |
Use Scenario: Online double-conversion UPS with 1200 V DC link and 50/60 Hz output using phase-shifted full-bridge. IC Role / Device Role / Timing Role: Resonant switch enabling ZVS over full load range; body diode sustains reactive current during zero-voltage transitions. Use Value: 150°C max junction temperature rating supports derated operation in enclosed cabinets without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar reverse-conducting IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN25N120B3 | Higher VCE(sat) (2.1 V @ 25°C), no integrated gate resistor, TO-247-3 package | Requires external gate resistor tuning and higher drive power; less suited for compact induction cooktop PCB layouts | Preferred where gate drive flexibility outweighs board space constraints and thermal optimization is secondary |
| STMicroelectronics STGW25H120DF2 | Lower VF (1.7 V) but higher Eoff (0.14 mJ), same 1200 V/25 A rating, different thermal resistance (0.65 K/W) | Better diode conduction but reduced ZVS margin at high dv/dt; requires larger heatsink due to higher Rth(j-c) | Appropriate when diode conduction loss dominates system efficiency, and thermal budget permits larger heatsink area |
Compared with IXGN25N120B3 and STGW25H120DF2, IHW25N120E1XKSA1 offers the lowest combined conduction + soft-switching loss profile (1.5 V VCE(sat) + 1.9 V VF + 0.08 mJ Eoff) and best thermal coupling (0.54 K/W), making it optimal for space-constrained, thermally sensitive resonant heating applications.
Availability
IHW25N120E1XKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, inverterized microwave ovens, and resonant DC-DC converters requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant manufacturing.
Supply support for IHW25N120E1XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.
This device belongs to Infineon's Resonant Soft-Switching Series of RC-IGBTs, engineered specifically for high-efficiency ZVS/ZCS topologies in induction heating, microwave power supplies, and resonant SMPS - prioritizing low EMI, thermal robustness, and monolithic integration.
FAQ
What is the maximum recommended gate-emitter voltage for continuous operation?
The absolute maximum continuous gate-emitter voltage is ±20 V per the datasheet. Transient spikes up to ±25 V (duration ≤10 µs, duty cycle <1%) are permitted. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift, especially above 125°C junction temperature.
Can IHW25N120E1XKSA1 be paralleled for higher current capacity?
Yes - its positive temperature coefficient of VCE(sat) enables stable current sharing without external emitter resistors. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and identical heatsink contact pressure to maintain thermal balance across devices.
Is the body diode rated for hard-switching applications?
No - the monolithic body diode is explicitly designed for soft-commutation only. Hard-switching (e.g., in non-resonant buck or boost converters) causes excessive reverse recovery loss and potential thermal failure due to unoptimized carrier lifetime and lack of soft-recovery tail.
What is the significance of the "E1" suffix in the part number?
The "E1" denotes the specific generation within Infineon's Resonant Soft-Switching Series, indicating implementation of second-generation TRENCHSTOP™ technology with improved VCE(sat) consistency, lower gate charge, and enhanced ruggedness versus earlier "E" variants - confirmed in Revision 2.1 (2016) datasheet.
IHW25N120E1XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Not For New Designs
- IGBT Type:
- NPT and Trench
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 50 A
- Current - Collector Pulsed (Icm):
- 75 A
- Vce(on) (Max) @ Vge, Ic:
- 2V @ 15V, 25A
- Power - Max:
- 231 W
- Switching Energy:
- 800µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 147 nC
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3
IHW25N120E1XKSA1 FAQ
1.How can I place an order for IHW25N120E1XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IHW25N120E1XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IHW25N120E1XKSA1 reliable?
The price and inventory of IHW25N120E1XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW25N120E1XKSA1 is usually 5 days.
3.What payment methods are accepted for IHW25N120E1XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW25N120E1XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IHW25N120E1XKSA1?
IHW25N120E1XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IHW25N120E1XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IHW25N120E1XKSA1?
For technical support, including IHW25N120E1XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW25N120E1XKSA1 requirements.
6.How does Aetrix verify that IHW25N120E1XKSA1 is sourced from the original manufacturer or authorized distributors?
All IHW25N120E1XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW25N120E1XKSA1 meets industry standards.
7.What is the process for return or replacement of IHW25N120E1XKSA1?
All IHW25N120E1XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW25N120E1XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IHW25N120E1XKSA1 part is unused and in its original packaging.
Return procedure for IHW25N120E1XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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