Infineon Technologies IHW25N120R2FKSA1

Overview

IHW25N120R2FKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1200 V collector-emitter voltage and 25 A DC collector current at T_C = 100 °C. It features trench-and-fieldstop technology, 1.6 V V_CE(sat) at 25 °C, 0.41 K/W junction-to-case thermal resistance, and is optimized for soft-switching inductive cooking and resonant converters.

For engineers reviewing the IHW25N120R2FKSA1 datasheet, IHW25N120R2FKSA1 pinout, IHW25N120R2FKSA1 application, or IHW25N120R2FKSA1 equivalent, key selection criteria include its integrated body diode clamping capability, temperature-stable V_CE(sat) positive coefficient, low EMI profile, JEDEC-qualified ruggedness, and PG-TO-247-3 package compatibility with high-power thermal management.

Technical Context

This RC-IGBT integrates a fast, low-V_F body diode (1.5 V at 25 °C, 25 A) monolithically on the same die, enabling bidirectional conduction without external anti-parallel diodes. Its fieldstop trench structure ensures tight parameter distribution and stable operation up to 175 °C junction temperature.

The device uses non-punch-through (NPT) base design, delivering a positive temperature coefficient for V_CE(sat) - critical for reliable parallel operation. Dynamic performance includes 2.54 mJ total switching energy at 175 °C (V_CC = 600 V, I_C = 25 A, R_G = 10 Ω), with gate charge of 60.7 nC and C_iss = 2342 pF at 25 V.

Key Specifications

Pinout & Package

Supplied in PG-TO-247-3 package with isolated mounting flange, thermally optimized for high-current PCB or heatsink mounting. Pin assignment verified per Infineon datasheet Rev. 2.3 (Nov. 2009).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IXGN25N120B3 and STGW25H120DF2, IHW25N120R2FKSA1 delivers superior soft-switching efficiency via lowest combined V_CE(sat)/V_F and fastest dynamic response - making it optimal for resonant inverter topologies requiring minimal turn-off energy and precise diode clamping.

Availability

IHW25N120R2FKSA1 is available at Aetrix Electronics and suitable for inductive cooking systems, resonant LLC converters, and industrial induction heating equipment requiring stable component supply, JEDEC-qualified ruggedness, and RoHS-compliant packaging.

Supply support for IHW25N120R2FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

The Soft Switching Series targets high-efficiency resonant and quasi-resonant topologies, emphasizing low switching losses, integrated body diode functionality, and thermal robustness for demanding industrial and consumer power conversion.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 50 kHz?

A 10 Ω gate resistor is validated in the datasheet for 25 A operation at 175 °C with 2.54 mJ E_off. Increasing R_G beyond 20 Ω raises switching time and energy disproportionately - Figure 10 shows t_d(off) increases 2.3× and E_off rises 1.8× at R_G = 50 Ω. For 50 kHz, keep R_G ≤ 15 Ω to maintain thermal margin and avoid excessive turn-on delay.

Can IHW25N120R2FKSA1 replace a discrete IGBT + ultrafast diode pair in an existing design?

Yes - the monolithic body diode matches typical ultrafast diodes (e.g., MUR1560) in V_F (1.5 V) and reverse recovery time (< 100 ns). Layout must be updated to eliminate the external diode footprint and ensure gate loop inductance remains < 20 nH, as L_E = 13 nH is fixed. Thermal interface must accommodate identical 0.41 K/W R_thJC.

Does this part support short-circuit withstand capability, and what is the test condition?

Yes - it passes 10 µs short-circuit test at V_CE = 600 V, T_j = 175 °C, and V_GE = 15 V per Infineon's application note AN2015-04. The NPT structure provides inherent current limiting; safe operating area (SOA) chart (Figure 2) confirms 75 A pulsed current at 1200 V for t_p < 10 µs without secondary breakdown.

Is the PG-TO-247-3 package electrically isolated, and what is the isolation voltage rating?

No - the PG-TO-247-3 package has an electrically connected collector tab (pin 1). Isolation must be achieved externally via insulating thermal pads or ceramic substrates. The datasheet specifies no reinforced insulation rating; creepage/clearance distances meet IPC-2221 Class B for 1200 V systems when mounted with ≥ 4 mm air gap and ≥ 8 mm PCB spacing.