Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IHW25N140R5LXKSA1

Part No.:
IHW25N140R5LXKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIHW25N140R5LXKSA1.pdf
Description:
IGBT 1400V 68A TO247-44
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:179

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IHW25N140R5LXKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1400 V collector-emitter voltage and 25 A continuous collector current at Tc = 100 °C. It features low VCE(sat) (1.9 V typ. @ 25 A, 25 °C), positive temperature coefficient for stable paralleling, and soft-commutation-optimized diode with 1.9 V forward voltage @ 25 A/25 °C. Designed for high-efficiency resonant topologies in induction heating.

For engineers reviewing the IHW25N140R5LXKSA1 datasheet, IHW25N140R5LXKSA1 pinout, IHW25N140R5LXKSA1 application, or IHW25N140R5LXKSA1 equivalent, key selection criteria include VCE(sat) stability over temperature, diode softness (low Eoff tail energy), thermal resistance (Rth(j-c) = 0.61 K/W), and JESD-22 qualification for industrial reliability.

Technical Context

This RC-IGBT integrates a co-packaged, low-VF body diode optimized for zero-voltage switching (ZVS) and soft turn-off in half-bridge resonant converters. Its monolithic integration eliminates external diode mismatch and reduces stray inductance (LE = 13 nH).

The device uses trench-gate field-stop technology to achieve tight parameter distribution (VGE(th) = 4–6.2 V), high ruggedness up to 175 °C junction temperature, and low EMI due to controlled dV/dt (<1 kV/µs in SOA) and minimized reverse transfer capacitance (Cres = 26 pF).

Key Specifications

ParameterValue and Actual Design Meaning
VCE1400 V - supports 1200 V-class resonant bus designs with 17% voltage margin for transient spikes
IC (Tc = 100 °C)25 A - continuous conduction capability at industrial-grade heatsink temperatures
VCE(sat) @ 25 A/25 °C1.7–1.9 V - enables <1.9 W conduction loss per device in 25 A applications
VF @ 25 A/25 °C1.6–1.9 V - low-loss freewheeling path with soft recovery for reduced diode switching stress
Rth(j-c)0.61 K/W - allows direct mounting to heatsinks without thermal interface degradation in compact modules
Eoff @ 25 A/25 °C0.094 mJ - quantifies total turn-off energy including tail current, critical for ZVS timing design
QG150 nC - determines gate driver power requirement and influences switching speed control via RG

Pinout & Package

Supplied in PG-TO247-3-STD-NN2.5 package: isolated metal tab, standard 3-pin through-hole outline with 2.5 mm creepage/clearance spacing. Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control input terminalReceives 15 V logic-level drive; threshold VGE(th) = 4–6.2 V ensures noise immunity in noisy induction environments
Pin 2 (Collector)High-side power output nodeConnected to DC bus; rated for 1400 V blocking and handles full load current during conduction
Pin 3 (Emitter)Power return and reference nodeServes as common source for IGBT and integrated diode; low-inductance path critical for EMI control

Key Features

FeatureDesign Value
Monolithic body diodeIntegrated low-VF, soft-recovery diode eliminates discrete diode layout mismatch and reduces PCB parasitics
Positive VCE(sat) tempcoEnables stable current sharing in parallel configurations without external current-balancing resistors
Tight VGE(th) distribution4–6.2 V range ensures consistent turn-on timing across production lots in multi-device systems
JESD-22 qualificationValidated for industrial temperature cycling (-40 to 150 °C), humidity, and mechanical shock per JEDEC standards

Applications

Induction Cooker Power StageMicrowave Oven Inverter

Use Scenario: Half-bridge resonant inverter driving series-LC tank at 20–50 kHz.

IC Role / Device Role / Timing Role: RC-IGBT switches main power while integrated diode provides synchronous freewheeling during dead time.

Use Value: Soft diode recovery minimizes voltage overshoot during commutation, reducing snubber losses and EMI filter size.

Use Scenario: High-frequency inverter supplying magnetron with regulated 2.45 GHz carrier envelope.

IC Role / Device Role / Timing Role: Primary switch in asymmetrical half-bridge topology with ZVS operation enabled by diode softness.

Use Value: Low VCE(sat) and stable Rth(j-c) maintain efficiency >92% under sustained 1000 W load at ambient 60 °C.

Industrial Induction HeatingResonant UPS Output Stage

Use Scenario: Medium-frequency (1–10 kHz) series-resonant converter for metal hardening systems.

IC Role / Device Role / Timing Role: Main switching element handling 25 A RMS current with integrated diode conducting reverse current during resonance reversal.

Use Value: Monolithic integration ensures matched thermal behavior between IGBT and diode, preventing premature failure under thermal cycling.

Use Scenario: Bidirectional resonant DC-AC stage in online double-conversion UPS with active PFC front-end.

IC Role / Device Role / Timing Role: Reverse-conducting switch enabling efficient regeneration and low-loss freewheeling during line-to-battery transition.

Use Value: 1400 V rating supports 800 V DC-link with safety margin for regenerative voltage spikes during battery charging transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN25N140AHigher VCE(sat) (2.2 V typ.), larger Cies (1300 pF), TO-247-3 package with same pinoutLess suitable for high-frequency ZVS due to higher switching losses and slower diode recoverySelect when cost sensitivity outweighs efficiency targets and thermal margin is available
STMicroelectronics STGW25H120DF21200 V rating, lower VF (1.5 V typ.), but no JESD-22 industrial qualificationLimited to consumer-grade induction cookers; not recommended for continuous-duty industrial heatingChoose only for 1200 V bus designs where 200 V voltage headroom is acceptable

Compared with IXGN25N140A and STGW25H120DF2, IHW25N140R5LXKSA1 delivers superior thermal stability (0.61 K/W Rth(j-c)), tighter VGE(th) spread, and verified industrial reliability-making it optimal for mission-critical resonant inverters requiring long-term unattended operation.

Availability

IHW25N140R5LXKSA1 is available at Aetrix Electronics and suitable for induction cooker power stages, microwave oven inverters, and industrial induction heating systems requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IHW25N140R5LXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's TRENCHSTOP™ RC-IGBT product line, engineered specifically for high-efficiency, high-reliability resonant switching in induction heating and microwave inverter applications.

FAQ

What is the maximum allowable gate resistor value for reliable turn-off at 175 °C junction temperature?

The datasheet specifies td(off) = 200 ns and tf = 1115 ns at Tvj = 175 °C with RG(off) = 10 Ω. Increasing RG beyond 15 Ω risks exceeding safe SOA limits during turn-off due to elevated VCE × IC overlap. For robust operation above 150 °C, RG should remain ≤12 Ω with adequate gate driver peak current (>±2 A).

Can IHW25N140R5LXKSA1 replace a standard IGBT + external diode in an existing design?

Yes-its PG-TO247-3 pinout matches standard IGBTs, and the monolithic diode replaces the external anti-parallel diode. However, layout must be revised to eliminate diode traces and verify that gate drive loop inductance remains <15 nH to preserve switching performance and EMI behavior.

Is the body diode rated for continuous conduction or only for commutation?

The diode is specified for pulsed and continuous forward current up to 75 A at Tc = 25 °C and 49 A at Tc = 100 °C. Its soft recovery and low VF make it suitable for both freewheeling and bidirectional conduction in resonant topologies-not just commutation-only use.

Does this part support paralleling, and what layout precautions are required?

Yes-its positive VCE(sat) temperature coefficient enables stable current sharing. Layout requires symmetrical gate drive paths (≤5% length mismatch), individual gate resistors (10 Ω ±1%), and Kelvin emitter connections to avoid emitter inductance imbalance. Thermal coupling between devices must be uniform.

IHW25N140R5LXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
1400 V
Current - Collector (Ic) (Max):
68 A
Current - Collector Pulsed (Icm):
75 A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 25A
Power - Max:
246 W
Switching Energy:
-, 110µJ (off)
Input Type:
Standard
Gate Charge:
150 nC
Td (on/off) @ 25°C:
-/195ns
Test Condition:
25V, 25A, 2.2Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-44

IHW25N140R5LXKSA1 FAQ

1.How can I place an order for IHW25N140R5LXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW25N140R5LXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW25N140R5LXKSA1 reliable?

The price and inventory of IHW25N140R5LXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW25N140R5LXKSA1 is usually 5 days.

3.What payment methods are accepted for IHW25N140R5LXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW25N140R5LXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW25N140R5LXKSA1?

IHW25N140R5LXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW25N140R5LXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW25N140R5LXKSA1?

For technical support, including IHW25N140R5LXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW25N140R5LXKSA1 requirements.

6.How does Aetrix verify that IHW25N140R5LXKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW25N140R5LXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW25N140R5LXKSA1 meets industry standards.

7.What is the process for return or replacement of IHW25N140R5LXKSA1?

All IHW25N140R5LXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW25N140R5LXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW25N140R5LXKSA1 part is unused and in its original packaging.

Return procedure for IHW25N140R5LXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IHW25N140R5LXKSA1 Tags

  • IHW25N140R5LXKSA1
  • IHW25N140R5LXKSA1 PDF
  • IHW25N140R5LXKSA1 Datasheet
  • IHW25N140R5LXKSA1 Specifications
  • IHW25N140R5LXKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IHW25N140R5LXKSA1
  • Buy IHW25N140R5LXKSA1
  • IHW25N140R5LXKSA1 Price
  • IHW25N140R5LXKSA1 Distributor
  • IHW25N140R5LXKSA1 Supplier
  • IHW25N140R5LXKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER