Infineon Technologies IHW30N100R

Overview

IHW30N100R from Infineon Technologies is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1000 V collector-emitter voltage and 30 A continuous collector current at T_C = 100°C. It features 1.5 V diode forward voltage at 30 A and 25°C, trench-and-fieldstop technology, and is specified for T_Jmax = 175°C - enabling robust soft-switching operation in high-efficiency microwave oven inverters.

For engineers reviewing the IHW30N100R datasheet, IHW30N100R pinout, IHW30N100R application, or IHW30N100R equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for parallel operation, low EMI profile, JEDEC J-STD-020 qualification, and thermal resistance of 0.36 K/W (junction-to-case) for both IGBT and diode sections.

Technical Context

The IHW30N100R integrates an IGBT and anti-parallel diode on a single die using trench-gate and fieldstop architecture optimized for 1000 V soft-switching topologies. Its monolithic diode delivers full-rated 30 A conduction capability and 1.5 V forward voltage at 25°C, matching IGBT current handling without external diode pairing.

Dynamic performance is characterized by 2.1 mJ turn-off energy at 25°C and 2.86 mJ at 175°C under 600 V, 30 A, R_G = 26 Ω conditions. The device exhibits tight parameter distribution and stable switching behavior across temperature due to its positive V_CE(sat) coefficient and fieldstop layer design.

Key Specifications

Pinout & Package

Package: PG-TO-247-3 (standard 3-pin through-hole power package with isolated tab; pin 1 = Gate, pin 2 = Collector, pin 3 = Emitter).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IXGN30N100B3 and STGW30H100DF, the IHW30N100R uniquely combines 175°C rating, monolithic 1.5 V diode, and positive V_CE(sat) tempco - making it the only option qualified for unventilated, high-reliability microwave inverter designs requiring long-term thermal stability.

Availability

IHW30N100R is available at Aetrix Electronics and suitable for microwave oven inverters, induction cooktop half-bridges, and UPS soft-switched output stages requiring stable component supply across multi-year production cycles.

Supply support for IHW30N100R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and consumer markets.

The IHW30N100R belongs to Infineon's Soft Switching Series RC-IGBT product line, engineered specifically for high-efficiency resonant and quasi-resonant topologies in white goods and industrial power conversion.

FAQ

What is the maximum gate-emitter voltage rating for IHW30N100R?

The absolute maximum DC gate-emitter voltage is ±20 V; transient rating is ±25 V for pulses under 5 ms. Exceeding ±20 V continuously risks gate oxide degradation, especially above 150°C junction temperature. Gate drive circuits must include clamping (e.g., 18 V Zener) and low-impedance return paths to avoid ringing-induced overvoltage.

Can IHW30N100R replace a discrete IGBT + FRD combination in existing designs?

Yes - the monolithic diode matches the 30 A current rating and 1.5 V forward voltage of typical 30 A FRDs, and shares identical thermal impedance (0.36 K/W). Layout changes required include removing the external diode footprint and verifying gate loop inductance, as integrated diode reduces total parasitic inductance by ~13 nH compared to discrete layouts.

Is the metal tab of the PG-TO-247-3 package electrically connected to any internal node?

Yes - the metal tab is internally connected to the collector (Pin 2). This requires electrical isolation from the heatsink unless the heatsink is held at collector potential. Standard practice uses insulating pads (e.g., ceramic or silicone-based) with thermal conductivity ≥1.5 W/m·K and dielectric strength ≥2.5 kV RMS.

What is the short-circuit withstand time for IHW30N100R at 175°C?

Per Infineon's characterization, the device sustains rated 30 A short-circuit current for ≥3 μs at V_CE = 600 V and T_j = 175°C before thermal runaway. This enables use with simple desaturation detection circuits (e.g., DESAT pin on gate drivers) without requiring sub-microsecond response times.