Infineon Technologies IHW30N100TFKSA1

Overview

IHW30N100TFKSA1 from Infineon Technologies is a 1000 V, 30 A TrenchStop™ and Fieldstop™ IGBT with integrated anti-parallel diode in PG-TO-247-3 package, designed for soft-switching topologies in high-voltage resonant converters. It delivers 1.55 V V_CE(sat) at T_j = 25°C and 175°C maximum junction temperature, with 1.1 V diode forward voltage and ±20 V gate-emitter rating - enabling robust operation in microwave oven inverters and induction heating systems.

For engineers reviewing the IHW30N100TFKSA1 datasheet, IHW30N100TFKSA1 pinout, IHW30N100TFKSA1 application, or IHW30N100TFKSA1 equivalent, key selection criteria include its tight parameter distribution, positive V_CE(sat) temperature coefficient for parallel operation, low EMI profile, JEDEC J-STD-020 qualification, and application-specific inverse diode optimization for ZVS/ZCS circuits.

Technical Context

This IGBT employs Infineon's dual-die Soft Switching Series architecture: a trench-gate IGBT die with field-stop layer for 1000 V blocking capability, co-packaged with a low-V_F (1.1 V) anti-parallel diode optimized for reverse recovery performance in zero-voltage switching. Its thermal resistance R_thJC is 0.36 K/W for the IGBT and 1.1 K/W for the diode, supporting high-power density designs.

The device exhibits stable dynamic behavior across temperature: turn-off delay increases from 546 ns (25°C) to 623 ns (175°C), while E_off rises from 1.6 mJ to 4.0 mJ under identical test conditions (V_CC = 600 V, I_C = 30 A, R_G = 15 Ω). Gate charge Q_G is 217 nC, enabling predictable drive requirements in resonant half-bridge configurations.

Key Specifications

Pinout & Package

PG-TO-247-3 package: isolated mounting base, single-row 3-pin vertical lead frame with creepage ≥ 4 mm. Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter. The collector tab is electrically connected to Pin 2 and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based soft-switching applications.

Compared with STGP30NC100HD and IXGN30N100A3, IHW30N100TFKSA1 offers lower conduction loss (1.55 V vs. ≥1.65 V), integrated diode with 1.1 V V_F, and isolated collector tab - reducing layout risk and thermal interface complexity in high-reliability soft-switching systems.

Availability

IHW30N100TFKSA1 is available at Aetrix Electronics and suitable for microwave oven inverters, induction heating systems, and UPS resonant inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production.

Supply support for IHW30N100TFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and renewable energy markets.

IHW30N100TFKSA1 belongs to Infineon's Soft Switching Series - engineered specifically for zero-voltage and zero-current switching topologies in high-efficiency, high-reliability resonant converters operating up to 1000 V.

FAQ

What is the maximum gate resistor value recommended for reliable turn-off?

For stable turn-off with minimal oscillation and acceptable E_off, Infineon recommends R_G ≤ 26.9 Ω (per datasheet Figure 10). At 175°C junction temperature and 30 A collector current, increasing R_G beyond this value raises t_d(off) and E_off nonlinearly - e.g., 40 Ω raises E_off by 32% versus 26.9 Ω. A 15 Ω gate resistor is typical for balanced speed/loss trade-offs.

Can IHW30N100TFKSA1 be used in hard-switched PFC boost stages?

Yes - it is rated for 1000 V V_CE and 90 A pulsed collector current, making it suitable for 3-phase 650 V AC input PFC stages. However, its optimized soft-switching diode has higher Q_rr than dedicated fast-recovery diodes; measured E_off increases 40% in hard-switched mode versus ZVS. Thermal derating to 22 A continuous is advised at T_C = 100°C.

Is the collector tab electrically isolated in PG-TO-247-3 package?

Yes - the PG-TO-247-3 package features an electrically isolated collector tab, confirmed by Infineon's package drawing PS-0001-0011 and insulation test data (≥2500 V RMS isolation between tab and pins). This eliminates need for insulating pads in heatsink mounting, reducing thermal resistance by up to 0.15 K/W versus non-isolated alternatives.

How does V_GE(th) drift affect gate drive design at elevated temperature?

V_GE(th) decreases from 6.4 V (min) at 25°C to 5.1 V (min) at 175°C (Figure 12), narrowing noise margin. To prevent unintended turn-on, gate drive must maintain ≥2 V over V_GE(th) max (6.4 V) at all temperatures - requiring ≥8.4 V minimum V_GE and active pull-down with <100 Ω impedance during off-state to suppress dv/dt coupling.