Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW30N110R5XKSA1

Name: IHW30N110R5XKSA1
Brand: Infineon Technologies
SKU: IHW30N110R5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IHW30N110R5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW30N110R5XKSA1.pdf

Description:: IGBT TRENCH 60A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:185

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IHW30N110R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1100 V collector-emitter voltage and 30 A continuous collector current at Tc = 100 °C. It features low V_CE(sat) (1.55–1.9 V), soft commutation capability via integrated diode, and positive temperature coefficient for stable parallel operation. Used in high-frequency resonant topologies of induction cookers and microwave ovens.

For engineers reviewing the IHW30N110R5XKSA1 datasheet, IHW30N110R5XKSA1 pinout, IHW30N110R5XKSA1 application, or IHW30N110R5XKSA1 equivalent, key selection criteria include V_CE(sat) vs. temperature stability, diode forward voltage (V_F = 1.8–2.1 V), turn-off energy (E_off = 1.2–2.4 mJ), soft-switching compatibility, and TO-247-3 package thermal resistance (R_th(j-c) = 0.45 K/W).

Technical Context

This RC-IGBT integrates an ultra-fast, low-V_F body diode on the same die as the IGBT, enabling bidirectional conduction without external antiparallel diodes. Its gate threshold voltage (V_GE(th) = 5.1–6.4 V) and transconductance (g_fs = 23 S) support robust drive margin and linear current control in hard- and soft-switched converters.

The device operates up to 175 °C junction temperature with tight parameter distribution and exhibits low EMI due to controlled fall time (t_f = 30–120 ns) and optimized capacitance profile (C_ies = 1800 pF, C_res = 45 pF). Its positive V_CE(sat) temperature coefficient ensures current sharing in paralleled configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1100 V - supports 800 V DC bus designs with 37.5% voltage margin for surge and ringing.
I_C	30 A @ T_c = 100 °C - defines continuous output power capability in thermally constrained consumer appliance heatsinks.
V_CE(sat)	1.55–1.9 V - enables <1.5 W conduction loss at 30 A, critical for efficiency in 20–50 kHz induction heating inverters.
V_F (diode)	1.8–2.1 V @ 30 A - minimizes reverse conduction loss during ZVS/ZCS transitions in resonant half-bridge topologies.
E_off	1.2–2.4 mJ @ 600 V/30 A - determines snubber sizing and switching loss budget in high-frequency cooking applications.
R_th(j-c)	0.45 K/W - allows direct thermal interface to aluminum heatsink without thermal pad derating in compact rice cooker modules.
t_f	30–120 ns - ensures clean voltage transitions and low dv/dt-induced EMI in unshielded kitchen appliances.

Pinout & Package

Package: PG-TO247-3-STD-NN2.5 - standard 3-pin TO-247 outline with isolated tab, 0.6 Nm M3 mounting torque rating, and 13 nH internal emitter inductance measured 5 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC bus (+); carries full load current and withstands 1100 V blocking; electrically tied to metal tab.
Gate (G)	Control input for IGBT channel	High-impedance MOS gate requiring 15 V drive; threshold 5.1–6.4 V; sensitive to ESD and overvoltage (>30 V transient).
Emitter (E)	Power return and reference node	Common source for IGBT and body diode; low-inductance path critical for minimizing switching oscillation and shoot-through risk.

Key Features

Feature	Design Value
Monolithic body diode	Enables single-package bidirectional conduction with matched thermal tracking and soft recovery-eliminates discrete diode layout complexity and parasitic mismatch.
Positive V_CE(sat) tempco	Ensures inherent current balancing across paralleled devices without external ballasting resistors or active current sharing circuits.
Low EMI design	Optimized C_res/C_ies ratio and controlled t_f reduce high-frequency spectral content, easing EMC compliance in Class B household appliances.
Tight parameter distribution	Minimizes binning requirements and simplifies production calibration-critical for cost-sensitive, high-volume induction cooker manufacturing.

Applications

Induction Cooker Half-Bridge

Microwave Oven Inverter

Use Scenario: Resonant half-bridge driving 20–30 kHz LC tank for pan-bottom eddy current heating.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical ZVS topology; body diode conducts freewheeling current during dead-time.

Use Value: Low V_F (1.8 V) and soft recovery minimize reverse recovery losses; 1.55 V V_CE(sat) reduces conduction loss by >15% vs. legacy 2.1 V IGBTs.

Use Scenario: High-efficiency inverter supplying magnetron with regulated 2.5–4.5 kW RF power.

IC Role / Device Role / Timing Role: Main switching element in voltage-fed push-pull or full-bridge; handles repetitive 100–200 A peak currents during duty cycling.

Use Value: 200 A non-repetitive I_CSM and 175 °C T_vj(max) enable short-term overload tolerance during magnetron ignition surges.

Rice Cooker Power Control

Commercial Food Warmer

Use Scenario: Phase-angle or burst-fire AC line control for precise thermal ramping in multi-stage cooking cycles.

IC Role / Device Role / Timing Role: Fast-switching AC switch replacing TRIAC; body diode provides commutation path for reactive loads.

Use Value: 1100 V V_RRM and 630 µA I_R at 175 °C ensure reliability under humid, high-ambient-temperature conditions inside sealed cooking chambers.

Use Scenario: Solid-state relay replacement in 3-phase food holding cabinets with 24/7 operation.

IC Role / Device Role / Timing Role: Zero-crossing–assisted switching element; body diode enables bidirectional conduction without back-to-back configuration.

Use Value: R_th(j-c) = 0.45 K/W and 165 W P_tot @ T_c = 100 °C allow compact heatsink integration in space-constrained commercial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N120B3	Higher V_CE = 1200 V; higher V_CE(sat) = 2.1 V; no monolithic diode (requires external diode)	Designed for industrial UPS; lacks integrated soft-commutation diode	Select when 1200 V margin is mandatory and board space permits discrete diode placement.
STMicroelectronics STGW30H120DF2	Same 1200 V rating; lower I_C = 25 A @ T_c = 100 °C; V_F = 2.3 V; higher E_off = 3.1 mJ	Optimized for motor drives; slower soft recovery increases switching loss in resonant cookers	Prefer only if existing design uses ST's gate driver ecosystem and thermal margin exceeds 15 °C.

Compared with IXGN30N120B3 and STGW30H120DF2, IHW30N110R5XKSA1 delivers superior soft-switching efficiency in consumer resonant inverters due to its monolithic low-V_F diode, tighter V_CE(sat) distribution, and lower E_off-making it the preferred choice for cost- and size-sensitive induction heating platforms.

Availability

IHW30N110R5XKSA1 is available at Aetrix Electronics and suitable for induction cookers, microwave oven inverters, and rice cooker power control systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for IHW30N110R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to Infineon's TRENCHSTOP™ RC-IGBT product line, engineered specifically for high-efficiency, high-frequency resonant converters in compact household appliances where integration, thermal performance, and EMI control are critical.

FAQ

What is the maximum gate-emitter voltage rating for safe operation?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient rating up to 30 V for pulses ≤10 µs and duty cycle <1%. Exceeding 20 V DC risks permanent gate oxide damage; recommended drive is +15 V / –5 V to ensure fast, reliable turn-on and noise-immune turn-off.

Can IHW30N110R5XKSA1 be used without an external freewheeling diode?

Yes-the integrated monolithic body diode is rated for 30 A continuous forward current at T_c = 100 °C and 1100 V reverse blocking, eliminating need for external antiparallel diodes in half-bridge and full-bridge resonant topologies where soft commutation is required.

How does the positive temperature coefficient of V_CE(sat) benefit parallel operation?

As junction temperature rises, V_CE(sat) increases, causing current to naturally redistribute toward cooler devices-enabling stable, self-balancing parallel operation without current-sharing resistors or complex gate-drive matching, reducing system cost and PCB area.

Is this device qualified for industrial temperature range?

Yes-it is qualified per JEDEC47/20/22 standards for industrial applications, with guaranteed operation from –40 °C to +175 °C junction temperature, and thermal resistance R_th(j-c) = 0.45 K/W confirmed under standardized mounting conditions using M3 screws at 0.6 Nm torque.

IHW30N110R5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.85V @ 15V, 30A

Power - Max:: 330 W

Switching Energy:: -

Input Type:: Standard

Gate Charge:: 240 nC

Td (on/off) @ 25°C:: -/350ns

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW30N110R5XKSA1 FAQ

1.How can I place an order for IHW30N110R5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW30N110R5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW30N110R5XKSA1 reliable?

The price and inventory of IHW30N110R5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N110R5XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW30N110R5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N110R5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW30N110R5XKSA1?

IHW30N110R5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW30N110R5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW30N110R5XKSA1?

For technical support, including IHW30N110R5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N110R5XKSA1 requirements.

6.How does Aetrix verify that IHW30N110R5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW30N110R5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N110R5XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW30N110R5XKSA1?

All IHW30N110R5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N110R5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW30N110R5XKSA1 part is unused and in its original packaging.

Return procedure for IHW30N110R5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…