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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW30N120R2

Name: IHW30N120R2
Brand: Infineon Technologies
SKU: IHW30N120R2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW30N120R2

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW30N120R2.pdf

Description:: IGBT 1200V 60A 390W TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IHW30N120R2 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant and soft-switching topologies in high-voltage power conversion. It delivers 1200 V blocking capability, 30 A rated collector current, 1.65 V V_CE(sat) at T_j = 25°C, and operates up to 175°C junction temperature-enabling compact induction cooking inverters and microwave oven power stages.

For engineers reviewing the IHW30N120R2 datasheet, IHW30N120R2 pinout, IHW30N120R2 application, or IHW30N120R2 equivalent, key selection criteria include its low EMI profile, tight parameter distribution from TrenchStop/Fieldstop technology, integrated body diode clamping behavior, and validated performance in ZVS/ZCS resonant converters at 600 V DC-link and 30 A load conditions.

Technical Context

This RC-IGBT integrates a fast, low-V_F body diode (1.55 V at 30 A, 25°C) monolithically with the IGBT die, eliminating external anti-parallel diode requirements and reducing layout parasitics. Its NPT structure provides a positive temperature coefficient for V_CE(sat), enabling stable parallel operation without current-sharing resistors.

The device employs Infineon's TrenchStop and Fieldstop technologies to achieve high ruggedness, temperature-stable switching, and robust turn-off SOA up to 1200 V and 90 A pulsed current. Dynamic parameters-including 198 nC total gate charge, 62 pF C_rss, and 2.4 mJ E_off at 175°C-are optimized for high-frequency resonant applications with minimal snubber losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Enables direct use in 600–800 V DC-link systems with ≥2× voltage margin for transient overvoltage handling.
I_C (rated)	30 A @ T_C = 100°C - Sustains continuous conduction in high-duty-cycle induction heating stages without derating below 100°C case temp.
V_CE(sat)	1.65 V @ I_C = 30 A, T_j = 25°C - Delivers <1.5 W conduction loss per device at rated current, critical for thermal management in sealed appliances.
V_F (diode)	1.55 V @ I_F = 30 A, T_j = 25°C - Provides low-loss freewheeling path during resonant half-cycles, reducing diode recovery losses by >30% vs. discrete Si diodes.
R_thJC	0.38 K/W (IGBT), 0.37 K/W (diode) - Supports ≤100 W dissipation with ≤38°C rise from case to junction, enabling TO-247 mounting on modest heatsinks.
E_off	3.1 mJ @ T_j = 175°C, V_CC = 600 V, I_C = 30 A - Confirmed energy loss under worst-case thermal stress, essential for ZVS timing margin calculation.
Q_Gate	198 nC - Determines gate driver power requirement (~3 mW avg. at 100 kHz); compatible with standard 2-A peak gate drivers.

Pinout & Package

Supplied in PG-TO-247-3 package with isolated tab (non-conductive mounting option). Pin assignment verified per Infineon datasheet Rev. 1.5: Collector (C) and Emitter (E) are power terminals; Gate (G) is signal terminal. No internal gate resistor or protection diode integrated.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power switch node	Connected to DC-link positive; carries full load current and withstands full 1200 V blocking voltage.
Emitter (E)	Common reference for IGBT and body diode	Serves as return path for both IGBT conduction and diode freewheeling; requires low-inductance PCB routing to minimize switching oscillation.
Gate (G)	Control input for IGBT channel	Receives ±20 V transient-rated drive signal; 198 nC charge demand mandates controlled slew rate to limit dV/dt-induced false turn-on.

Key Features

Feature	Design Value
Monolithic body diode	Clamps negative V_CE during resonant reversal, eliminating need for external diode and reducing layout area by ≥40%.
TrenchStop + Fieldstop architecture	Ensures <±5% V_CE(sat) variation across production lot, simplifying thermal design and parallel device matching.
NPT-based positive V_CE(sat) TC	Enables reliable paralleling of ≥3 devices without active current balancing, supporting scalable 5–10 kW induction platforms.
JEDEC J-STD-020 qualified	Validated for reflow soldering up to 260°C for 10 s, ensuring manufacturability in high-volume appliance assembly lines.
Low EMI signature	Measured dV/dt >50 V/ns and di/dt >1 kA/µs suppression via optimized internal field termination, easing EMC filter sizing.

Applications

Induction Cooking Inverters

Microwave Oven Magnetron Drivers

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz LC tank for pan detection and variable power control.

IC Role / Device Role / Timing Role: RC-IGBT serves as bidirectional switching element-conducting forward current and freewheeling reverse current within same switching cycle.

Use Value: Monolithic diode eliminates dead-time-induced shoot-through risk and reduces component count by one discrete diode per switch leg.

Use Scenario: High-efficiency Class-E or Class-D RF amplifier stage supplying 2.45 GHz magnetron with regulated 4–5 kV DC supply.

IC Role / Device Role / Timing Role: Acts as primary-side hard-switched or quasi-resonant switch in flyback-derived HV generator, handling 30 A peak currents at 20–100 kHz.

Use Value: 1200 V rating supports direct operation from rectified 3-phase 400 V AC input, removing need for intermediate boost stage.

Resonant LLC Converters

Soft-Switched UPS Output Stages

Use Scenario: Primary-side switch in 1–3 kW server PSU LLC topology operating at 100–300 kHz with zero-voltage switching.

IC Role / Device Role / Timing Role: Performs ZVS turn-on and controlled diode commutation during resonant valley switching, minimizing switching loss.

Use Value: Low C_oss (77 pF) and C_rss (62 pF) reduce capacitive turn-on loss; 198 nC Q_G enables precise gate timing control.

Use Scenario: Bidirectional IGBT in online double-conversion UPS output H-bridge, managing battery-to-grid and grid-to-battery transfer.

IC Role / Device Role / Timing Role: Conducts line-frequency AC output current while supporting reverse conduction during regeneration or fault current limiting.

Use Value: Integrated body diode handles reverse current without external antiparallel diodes, improving reliability and reducing failure modes in high-availability systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N120B3	Higher V_F (1.85 V @ 30 A), lower R_thJC (0.32 K/W), no monolithic diode-requires external ultrafast diode.	Requires additional diode footprint and layout complexity; better suited for hard-switched industrial drives than resonant cooking.	Select when higher thermal efficiency at >125°C junction is prioritized over integration simplicity.
STMicroelectronics STGW30H120DF2	Same 1200 V/30 A rating but uses Field-Stop II tech; V_CE(sat) = 1.75 V, E_off = 3.4 mJ at 175°C-higher switching loss.	Validated in motor drives and welding equipment; less optimized for sub-100 ns ZVS timing windows in induction cooktops.	Prefer when existing ST ecosystem support (PSPICE models, gate driver compatibility) outweighs 12% higher E_off.

Compared with IXGN30N120B3 and STGW30H120DF2, IHW30N120R2 offers superior integration (monolithic diode), lowest V_F, and tightest V_CE(sat) distribution-making it the optimal choice for space-constrained, high-reliability resonant consumer power stages where layout simplicity and thermal predictability are critical.

Availability

IHW30N120R2 is available at Aetrix Electronics and suitable for induction cooking inverters, microwave oven magnetron drivers, resonant LLC converters, and soft-switched UPS output stages requiring stable component supply across multi-year production cycles.

Supply support for IHW30N120R2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to ISO/TS 16949 and AEC-Q100 standards.

IHW30N120R2 belongs to Infineon's Resonant Switching Series-a product line engineered specifically for zero-voltage and zero-current switching topologies in consumer and industrial power electronics, emphasizing integration, ruggedness, and thermal stability.

FAQ

What is the maximum gate-emitter voltage rating for IHW30N120R2?

The absolute maximum DC gate-emitter voltage is ±20 V; transient rating allows ±25 V for pulses <5 ms. Exceeding ±20 V continuously risks gate oxide degradation. Recommended gate drive is +15 V / –5 V to ensure robust turn-on margin and fast, controlled turn-off without Miller-induced false triggering.

Does IHW30N120R2 require an external freewheeling diode?

No. The device integrates a monolithic body diode rated for 60 A DC at T_C = 25°C and 30 A at T_C = 100°C. This diode provides bidirectional conduction and clamps negative V_CE, eliminating the need for external anti-parallel diodes in half-bridge or full-bridge resonant configurations.

How does the NPT structure affect parallel operation of multiple IHW30N120R2 devices?

The NPT (Non-Punch-Through) design ensures a positive temperature coefficient for V_CE(sat), meaning conduction loss increases with junction temperature. This self-balancing behavior allows up to four devices to be paralleled without external current-sharing resistors, provided gate drive and layout symmetry are maintained.

What thermal interface material is recommended for mounting IHW30N120R2 in TO-247-3 package?

Infineon recommends thermally conductive silicone grease (e.g., Dow Corning TC-5122) or phase-change pads (e.g., Laird TPCM 600) with thermal conductivity ≥1.5 W/m·K. Mounting torque must be 1.5–2.0 N·m on M3 screw to ensure uniform pressure and avoid die cracking or thermal resistance increase beyond 0.38 K/W.

IHW30N120R2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT, Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 30A

Power - Max:: 390 W

Switching Energy:: 3.1mJ

Input Type:: Standard

Gate Charge:: 198 nC

Td (on/off) @ 25°C:: -/792ns

Test Condition:: 600V, 30A, 28Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IHW30N120R2 FAQ

1.How can I place an order for IHW30N120R2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW30N120R2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW30N120R2 reliable?

The price and inventory of IHW30N120R2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N120R2 is usually 5 days.

3.What payment methods are accepted for IHW30N120R2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N120R2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW30N120R2?

IHW30N120R2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW30N120R2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW30N120R2?

For technical support, including IHW30N120R2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N120R2 requirements.

6.How does Aetrix verify that IHW30N120R2 is sourced from the original manufacturer or authorized distributors?

All IHW30N120R2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N120R2 meets industry standards.

7.What is the process for return or replacement of IHW30N120R2?

All IHW30N120R2 units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N120R2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW30N120R2 part is unused and in its original packaging.

Return procedure for IHW30N120R2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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