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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW30N120R5XKSA1

Name: IHW30N120R5XKSA1
Brand: Infineon Technologies
SKU: IHW30N120R5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW30N120R5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW30N120R5XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 60A TO247-3

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Product details

Overview

IHW30N120R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant switching topologies in high-frequency power conversion. It delivers 1200 V collector-emitter voltage rating, 30 A DC collector current at Tc = 100°C, 1.55 V V_CE(sat) at 25°C, and operates up to 175°C junction temperature in PG-TO247-3 package - enabling compact induction cooking and microwave oven inverters.

For engineers reviewing the IHW30N120R5XKSA1 datasheet, IHW30N120R5XKSA1 pinout, IHW30N120R5XKSA1 application, or IHW30N120R5XKSA1 equivalent, key selection criteria include soft-switching turn-off energy (0.12 mJ at dv/dt = 200 V/µs), tight V_CE(sat) distribution, positive temperature coefficient for parallel operation, and integrated low-V_F body diode for zero-current switching.

Technical Context

This RC-IGBT integrates a co-packaged, low-forward-voltage body diode on the same die, eliminating external anti-parallel diode requirements in half-bridge LLC and ZVS resonant converters. Its TRENCHSTOP™ process ensures stable V_CE(sat) across temperature (1.90 V max at 175°C) and tight parameter spread for consistent system timing.

The device supports hard-switched and soft-switched operation with measured E_off of 2.30 mJ at 175°C under 600 V/30 A inductive conditions, while its 45 pF reverse transfer capacitance (C_res) and 1800 pF input capacitance (C_ies) enable predictable gate drive design and reduced EMI in >100 kHz applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	1200 V - supports 1000 V DC-link designs with 20% margin for surge and ringing in induction heating inverters
I_C (DC, Tc=100°C)	30 A - defines continuous conduction capability in thermally constrained cooktop PCB layouts
V_CE(sat) @ 25°C	1.55 V - enables <1.5 W conduction loss at 30 A, critical for thermal management in sealed enclosures
T_vj(max)	175 °C - allows sustained operation in high-ambient environments without derating below rated current
E_off (soft switch)	0.12 mJ @ dv/dt = 200 V/µs - reduces switching loss by >85% vs. hard-switched mode, enabling >200 kHz operation
R_th(j-c)	0.45 K/W - enables direct heatsink mounting with ≤1.4°C/W total thermal path to maintain T_vj < 150°C at full load
C_res	45 pF - limits Miller-induced false turn-on risk, permitting simpler gate driver design with 10 Ω R_G

Pinout & Package

Supplied in PG-TO247-3 package with isolated tab, featuring three terminals: Gate (G), Collector (C), and Emitter (E). The case is electrically connected to the collector, requiring insulated mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts ±20 V transient-rated gate drive; 235 nC total gate charge demands robust 2 A peak driver for <330 ns td(off)
C	High-side power output / collector node	Connected to DC-link positive; tab is collector - must be electrically isolated from heatsink
E	Power return / emitter node	Serves as common reference for gate drive and current sensing; low-inductance layout essential for dI/dt stability

Key Features

Feature	Design Value
Monolithic body diode	Integrated 30 A diode with 1.80 V V_F at 25°C eliminates discrete diode placement, reducing PCB area and parasitic inductance
Positive V_CE(sat) tempco	Enables stable current sharing in paralleled configurations without external ballasting resistors
Low EMI profile	Controlled dv/dt (200 V/µs) and 13 nH internal emitter inductance suppress radiated emissions in Class B appliances
JESD-022 qualified	Validated for 1000+ thermal cycles and 1000 h HTRB, ensuring reliability in consumer-grade induction cookers

Applications

Induction Cooking Inverter

Microwave Oven Inverter

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz LC tank for pan detection and heating control.

IC Role / Device Role / Timing Role: High-side RC-IGBT switching element with integrated diode conducting freewheeling current during ZVS transitions.

Use Value: 0.12 mJ soft-switching E_off enables >95% efficiency at full power while meeting CISPR 11 Class B emission limits.

Use Scenario: 27.12 MHz magnetron power supply using asymmetric half-bridge with phase-shifted PWM.

IC Role / Device Role / Timing Role: Resonant switch managing 1200 V DC-link commutation with body diode handling reverse recovery in discontinuous conduction.

Use Value: 175°C T_vj(max) and 1.90 V V_CE(sat) at 175°C ensure stable output under sustained 1000 W load without thermal shutdown.

Industrial Induction Heater

Wireless Power Transmitter

Use Scenario: 10–30 kW solid-state heater with multi-phase series-resonant topology and forced-air cooling.

IC Role / Device Role / Timing Role: Primary-side switching device operating in ZCS mode, leveraging monolithic diode for bidirectional current flow.

Use Value: 0.45 K/W R_th(j-c) supports 60 A pulsed current (I_Cpuls) with <10°C junction rise over heatsink, enabling compact thermal design.

Use Scenario: 15 W Qi-compliant transmitter using 125 kHz series-parallel resonant tank with adaptive frequency control.

IC Role / Device Role / Timing Role: Low-loss switching element in full-bridge configuration, where body diode conducts during dead-time intervals.

Use Value: Tight V_GE(th) distribution (5.1–6.4 V) ensures consistent turn-on timing across multiple units, critical for phase-matched bridge operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N120B3	Higher V_F (2.2 V) and larger C_res (65 pF); no monolithic diode - requires external ultrafast diode	Requires additional PCB area and layout care for diode placement; higher EMI risk in compact designs	Prefer when legacy gate drivers with lower peak current are used and thermal margin exceeds 20°C
STMicroelectronics STGW30H120DF2	Lower V_CE(sat) (1.45 V) but higher E_off (0.21 mJ soft-switched); same PG-TO247-3 footprint	Better conduction loss but less optimized for very high-frequency ZVS; slightly higher gate charge (260 nC)	Choose when prioritizing conduction efficiency over switching frequency ceiling (>300 kHz)

Compared with IXGN30N120B3 and STGW30H120DF2, IHW30N120R5XKSA1 offers the lowest soft-switching E_off and tightest V_CE(sat) distribution - making it optimal for space-constrained, high-reliability induction systems demanding consistent ZVS behavior across temperature and unit variance.

Availability

IHW30N120R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking inverters, microwave oven power supplies, industrial heating systems, and wireless power transmitters requiring stable component supply and long-term production continuity.

Supply support for IHW30N120R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and consumer markets.

The Resonant Switching Series - including IHW30N120R5XKSA1 - was engineered specifically for high-efficiency, high-frequency resonant converters in home appliance inverters, emphasizing soft-switching performance, thermal ruggedness, and monolithic integration.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175°C?

A 10 Ω gate resistor is validated in the datasheet for 395 ns t_d(off) and 125 ns t_f at 175°C. Increasing R_G beyond 15 Ω risks exceeding safe SOA limits during fast dv/dt events; use active Miller clamp or negative turn-off bias if higher impedance is required for EMI control.

Can IHW30N120R5XKSA1 replace standard IGBTs without circuit modification?

No - its monolithic body diode replaces the external anti-parallel diode, so existing layouts must remove that component and verify gate drive polarity and dead-time settings. Also confirm that the 0.45 K/W R_th(j-c) aligns with your heatsink interface resistance to avoid junction overheating.

Is the PG-TO247-3 package lead-free and RoHS compliant?

Yes - the device uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU and halogen-free standards per IEC 61249-2-21, verified in Infineon's material declaration document 2019-09-20 revision V2.3.

Does the body diode support bidirectional current in synchronous rectification mode?

No - the monolithic diode is unidirectional (anode tied to emitter, cathode to collector) and optimized for freewheeling, not synchronous rectification. It cannot replace a MOSFET-based SR stage; use only in standard IGBT half-bridge or full-bridge configurations with natural commutation.

IHW30N120R5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.85V @ 15V, 30A

Power - Max:: 330 W

Switching Energy:: 1.1mJ (off)

Input Type:: Standard

Gate Charge:: 235 nC

Td (on/off) @ 25°C:: -/330ns

Test Condition:: 600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW30N120R5XKSA1 FAQ

1.How can I place an order for IHW30N120R5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW30N120R5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW30N120R5XKSA1 reliable?

The price and inventory of IHW30N120R5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N120R5XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW30N120R5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N120R5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW30N120R5XKSA1?

IHW30N120R5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW30N120R5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW30N120R5XKSA1?

For technical support, including IHW30N120R5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N120R5XKSA1 requirements.

6.How does Aetrix verify that IHW30N120R5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW30N120R5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N120R5XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW30N120R5XKSA1?

All IHW30N120R5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N120R5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW30N120R5XKSA1 part is unused and in its original packaging.

Return procedure for IHW30N120R5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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