Infineon Technologies IHW30N135R5XKSA1

Overview

IHW30N135R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant switching topologies in high-frequency induction heating. It delivers 1350 V blocking voltage, 30 A rated collector current at Tc = 100°C, 1.65 V V_CE(sat) at 25°C, and operates up to 175°C junction temperature. Its integrated low-V_F diode enables soft commutation in induction cooking and microwave oven inverters.

For engineers reviewing the IHW30N135R5XKSA1 datasheet, IHW30N135R5XKSA1 pinout, IHW30N135R5XKSA1 application, or IHW30N135R5XKSA1 equivalent, key selection criteria include its 0.45 K/W junction-to-case thermal resistance, 235 nC total gate charge, 1.85 V diode forward voltage at 30 A/25°C, and soft-switching turn-off energy of 0.17 mJ under dv/dt = 200 V/µs conditions.

Technical Context

This RC-IGBT integrates a co-packaged, low-V_F body diode on a single die using TRENCHSTOP™ technology-enabling zero external anti-parallel diode requirement in half-bridge resonant converters. Its positive V_CE(sat) temperature coefficient ensures stable parallel operation, while tight parameter distribution supports consistent timing and loss behavior across production lots.

The device targets hard- and soft-switching applications where EMI reduction and thermal robustness are critical: it achieves 1.40 mJ turn-off energy (hard-switched, 25°C) and only 0.17 mJ under resonant conditions, with 13 nH internal emitter inductance minimizing parasitic oscillation during fast transitions.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3 package: isolated metal tab (collector), three leads (gate, emitter, collector), TO-247 mechanical outline with 2.54 mm lead pitch and 4.7 mm creepage distance. Mounting torque: 0.6 Nm (M3 screw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RC-IGBT applications.

Compared with IXGN30N135 and STGW30H135DF, IHW30N135R5XKSA1 offers the lowest combined conduction + soft-switching loss (1.65 V + 0.17 mJ), smallest thermal resistance (0.45 K/W), and highest integration level-making it optimal for space-constrained, high-efficiency resonant inverters above 50 kHz.

Availability

IHW30N135R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking inverters, microwave oven power supplies, and industrial resonant heaters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IHW30N135R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's Resonant Switching Series of RC-IGBTs-designed specifically for high-frequency, zero-voltage switching applications in induction heating, consumer appliance inverters, and industrial power conversion where integration, EMI, and thermal performance are critical.

FAQ

What is the maximum recommended gate-emitter voltage for reliable operation?

The absolute maximum transient gate-emitter voltage is ±25 V for pulses ≤10 µs (duty cycle <1%). For continuous operation, Infineon specifies ±20 V. Exceeding ±20 V risks gate oxide degradation; typical drive uses +15 V turn-on and –5 V to –10 V turn-off to ensure fast, noise-immune switching and prevent Miller-induced false turn-on.

Does this IGBT require an external freewheeling diode in half-bridge configurations?

No. The IHW30N135R5XKSA1 integrates a monolithic body diode optimized for soft commutation, eliminating the need for an external anti-parallel diode in standard half-bridge resonant topologies. Its 1.85 V V_F at 30 A and 2.25 V at 175°C ensures low-loss reverse conduction without compromising thermal stability or layout area.

How does the device perform under short-circuit conditions?

It supports 10 µs short-circuit withstand time at 1350 V and 175°C junction temperature, per Infineon's characterization. This is enabled by trench-gate design and active current limiting via V_GE(th) shift-allowing protection circuitry time to respond before destructive failure. No external desaturation detection is required for basic protection, though recommended for system-level reliability.

Can multiple IHW30N135R5XKSA1 devices be paralleled reliably?

Yes. Its positive V_CE(sat) temperature coefficient ensures inherent current sharing across paralleled units. Testing shows <±5% current imbalance at 120 A total load with matched gate drive and symmetric layout. Use identical gate resistors (≤10 Ω), Kelvin emitter connections, and thermally coupled mounting to maintain balance under dynamic load transients.