Infineon Technologies IHW30N140R5LXKSA1
- Part No.:
- IHW30N140R5LXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IHW30N140R5LXKSA1.pdf
- Description:
- IGBT 1400V 80A TO247-44
- Quantity:
- Payment:

- Shipping:

Inventory:218
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Product details
Overview
IHW30N140R5LXKSA1 from Infineon is a reverse-conducting IGBT with monolithic body diode, rated for 1400 V collector-emitter voltage and 30 A continuous collector current at Tc = 100 °C. It features low VCE(sat) (1.65–1.95 V), soft-commutation-optimized diode, positive temperature coefficient for paralleling, and JESD-022 qualification for industrial use.
For engineers reviewing the IHW30N140R5LXKSA1 datasheet, IHW30N140R5LXKSA1 pinout, IHW30N140R5LXKSA1 application, or IHW30N140R5LXKSA1 equivalent, key selection criteria include VCE(sat) stability over temperature, diode forward voltage matching, soft turn-off energy (0.147–0.175 mJ), and TO-247-3 package thermal resistance (Rth(j-c) = 0.49 K/W).
Technical Context
This RC-IGBT integrates a co-packaged, monolithic body diode optimized for soft commutation-enabling low EMI and reduced snubber requirements in resonant topologies. Its VCE(sat) exhibits a positive temperature coefficient (1.85 V at 125 °C, 1.9 V at 175 °C), ensuring stable current sharing during parallel operation.
The device supports high-voltage switching in hard- and soft-switched converters, with gate charge QG = 210 nC, turn-off delay td(off) = 170–175 ns, and fall time tf = 1065–1195 ns under standardized inductive load conditions (VCC = 1120 V, IC = 30 A, RG(off) = 10 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 1400 V - Maximum blocking voltage for high-voltage AC/DC conversion stages |
| IC | 30 A @ Tc = 100 °C - Continuous conduction capability in thermally constrained induction heating designs |
| VCE(sat) | 1.65–1.95 V - Low conduction loss enabling >98% efficiency in 1–3 kW resonant inverters |
| VF (diode) | 1.6–1.95 V @ IF = 30 A - Matched forward drop minimizes asymmetry in bidirectional current paths |
| Eoff | 0.147–0.175 mJ - Soft turn-off energy reduces voltage overshoot and EMI in ZVS/ZCS circuits |
| Rth(j-c) | 0.49 K/W - Enables direct heatsink mounting with predictable thermal margin up to 175 °C junction |
| QG | 210 nC - Gate drive power requirement informs gate driver selection (e.g., 15 V, ≥2 A peak) |
Pinout & Package
Package: PG-TO247-3-STD-NN2.5 - Standard through-hole 3-pin TO-247 housing with isolated tab, optimized for mechanical robustness and thermal transfer in high-power consumer appliances.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side current path | Connected to DC bus or resonant tank high side; electrically tied to metal tab for thermal conduction |
| Gate (G) | Control input for IGBT channel | Isolated MOS-gated terminal requiring <±20 V drive; sensitive to ESD and dV/dt coupling |
| Emitter (E) | Common reference for IGBT and diode | Low-inductance return path shared by both IGBT and integrated body diode; defines switching node potential |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic body diode | Integrated low-VF diode eliminates external anti-parallel diode, reducing PCB area and parasitic inductance |
| Positive VCE(sat) tempco | Enables stable current sharing across multiple devices without active current balancing circuitry |
| Tight parameter distribution | Minimizes unit-to-unit variation in timing and loss, critical for multi-phase synchronous control |
| JESD-022 qualification | Validated for industrial reliability including temperature cycling, humidity, and solderability per JEDEC standards |
Applications
| Induction Cooker Inverter Stage | Microwave Oven Magnetron Driver |
|---|---|
Use Scenario: High-frequency (20–50 kHz) half-bridge inverter driving resonant LC tank for pan detection and power regulation. IC Role / Device Role / Timing Role: RC-IGBT serves as main switching element with integrated diode conducting freewheeling current during dead-time. Use Value: Soft commutation capability reduces EMI emissions below CISPR-11 Class B limits without added snubbers. | Use Scenario: High-voltage DC link switching to generate pulsed anode voltage for magnetron excitation. IC Role / Device Role / Timing Role: Acts as high-side switch in flyback-derived topology; body diode handles reverse recovery during reset phase. Use Value: 1400 V rating enables direct use with 1200 V DC bus, eliminating voltage divider or clamping networks. |
| Industrial Induction Heating | UPS Inverter Output Stage |
Use Scenario: Medium-power (3–5 kW) series-resonant inverter for metal hardening and brazing equipment. IC Role / Device Role / Timing Role: Primary switching device in full-bridge configuration; monolithic diode conducts reverse current during zero-voltage switching transitions. Use Value: 0.49 K/W Rth(j-c) allows compact heatsink design while maintaining Tvj ≤ 150 °C at full load. | Use Scenario: Bidirectional output stage in online double-conversion UPS supporting regeneration and battery charging. IC Role / Device Role / Timing Role: Reverse-conducting topology enables efficient four-quadrant operation without external anti-parallel diodes. Use Value: Matched VF and VCE(sat) minimize conduction loss asymmetry in inverter and rectifier modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar reverse-conducting IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN30N140A | VCE(sat) = 2.1 V (typ), higher Eoff = 0.22 mJ, TO-247-3 package | Higher conduction loss; less suitable for thermally constrained 3 kW+ designs | Prefer when gate drive margin >2 A is available and soft-switching priority is lower |
| STMicroelectronics STGW30H140DF2 | Diode VF = 2.1 V (typ), Rth(j-c) = 0.55 K/W, same 1400 V/30 A rating | Higher diode forward drop increases conduction loss in bidirectional operation | Choose if cost sensitivity outweighs 0.2 V diode VF advantage and thermal margin permits 0.06 K/W penalty |
Compared with IXGN30N140A and STGW30H140DF2, IHW30N140R5LXKSA1 delivers lower total switching + conduction loss in soft-switched resonant inverters due to its 1.65 V VCE(sat), matched 1.6 V diode VF, and superior thermal resistance-making it optimal for compact, high-efficiency induction heating modules.
Availability
IHW30N140R5LXKSA1 is available at Aetrix Electronics and suitable for induction cookers, microwave oven magnetron drivers, and industrial induction heating systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for IHW30N140R5LXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
This device belongs to Infineon's RC-IGBT product line, engineered specifically for high-efficiency, high-reliability resonant and soft-switched power conversion in consumer and industrial heating applications.
FAQ
What is the maximum operating junction temperature for IHW30N140R5LXKSA1?
The absolute maximum operating junction temperature is 175 °C, with recommended derating to ≤150 °C for extended lifetime. Thermal design must account for Rth(j-c) = 0.49 K/W and case temperature limits defined by the heatsink interface and ambient conditions.
Does IHW30N140R5LXKSA1 require an external freewheeling diode?
No. It integrates a monolithic body diode rated for 30 A continuous forward current at Tc = 100 °C, designed specifically for soft commutation. External diodes are unnecessary unless higher peak current or faster recovery is required beyond the integrated diode's 1.6–1.95 V VF profile.
How does the positive temperature coefficient of VCE(sat) benefit system design?
The positive tempco (VCE(sat) increases with junction temperature) ensures inherent current balancing when multiple IHW30N140R5LXKSA1 devices operate in parallel, eliminating need for individual emitter resistors or active current-sharing circuits in high-power inverters.
Is IHW30N140R5LXKSA1 compatible with standard TO-247 heatsinks?
Yes. Its PG-TO247-3-STD-NN2.5 package uses industry-standard TO-247 mechanical dimensions and mounting hole spacing. The isolated metal tab allows direct thermal interface to heatsinks using standard thermal paste and M3 screws with 0.6 Nm torque specification.
IHW30N140R5LXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 1400 V
- Current - Collector (Ic) (Max):
- 80 A
- Current - Collector Pulsed (Icm):
- 90 A
- Vce(on) (Max) @ Vge, Ic:
- 1.95V @ 15V, 30A
- Power - Max:
- 306 W
- Switching Energy:
- -, 140µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 210 nC
- Td (on/off) @ 25°C:
- -/175ns
- Test Condition:
- 25V, 30A, 2.2Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-44
IHW30N140R5LXKSA1 FAQ
1.How can I place an order for IHW30N140R5LXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IHW30N140R5LXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IHW30N140R5LXKSA1 reliable?
The price and inventory of IHW30N140R5LXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N140R5LXKSA1 is usually 5 days.
3.What payment methods are accepted for IHW30N140R5LXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N140R5LXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IHW30N140R5LXKSA1?
IHW30N140R5LXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IHW30N140R5LXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IHW30N140R5LXKSA1?
For technical support, including IHW30N140R5LXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N140R5LXKSA1 requirements.
6.How does Aetrix verify that IHW30N140R5LXKSA1 is sourced from the original manufacturer or authorized distributors?
All IHW30N140R5LXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N140R5LXKSA1 meets industry standards.
7.What is the process for return or replacement of IHW30N140R5LXKSA1?
All IHW30N140R5LXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N140R5LXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IHW30N140R5LXKSA1 part is unused and in its original packaging.
Return procedure for IHW30N140R5LXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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