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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW30N160R2FKSA1

Name: IHW30N160R2FKSA1
Brand: Infineon Technologies
SKU: IHW30N160R2FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW30N160R2FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW30N160R2FKSA1.pdf

Description:: IGBT 1600V 60A 312W TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IHW30N160R2 from Infineon is a 1600 V, 30 A TrenchStop® Reverse Conducting IGBT with monolithic body diode, designed for soft-switching inductive cooking and resonant converters. It features 1.8 V V_CE(sat) at 25°C, 175°C max junction temperature, 0.48 K/W IGBT thermal resistance (j–c), and PG-TO-247-3 package for high-power thermal management.

For engineers reviewing the IHW30N160R2 datasheet, IHW30N160R2 pinout, IHW30N160R2 application, or IHW30N160R2 equivalent, key selection criteria include its reverse-conducting architecture, low EMI during zero-voltage switching, tight parameter distribution across temperature, and JEDEC-qualified ruggedness for 1600 V hard- and soft-switching topologies.

Technical Context

This RC-IGBT integrates a fast, low-V_F body diode (1.65 V at 30 A, 25°C) that clamps negative voltage transients and eliminates external anti-parallel diode requirements. Its NPT structure delivers a positive temperature coefficient in V_CE(sat), enabling stable parallel operation without current-sharing resistors.

The device combines TrenchStop® and Fieldstop® technologies to achieve high ruggedness at 1600 V, with validated turn-off safe operating area up to 90 A under V_CE ≤ 1600 V and T_j ≤ 175°C. Dynamic performance includes 4.37 mJ total switching energy (E_ts) at 175°C, 600 V, 30 A, and gate charge of 94 nC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1600 V - Enables use in 1200 V-class DC bus systems with 33% voltage margin for surge and ringing suppression
I_C (DC, T_C=100°C)	30 A - Sustains continuous conduction in induction heating half-bridge legs without forced air cooling
V_CE(sat) @ 30 A, 25°C	1.8 V - Reduces conduction loss to ~54 W at rated current, critical for thermal budget in sealed cooktop modules
V_F @ 30 A, 25°C	1.65 V - Body diode forward drop matches SiC diode performance level, enabling efficient freewheeling in ZVS LLC phases
R_thJC (IGBT)	0.48 K/W - Allows 312 W power dissipation at 25°C case temperature; supports >100 W output in compact TO-247 heatsink footprints
E_off @ 175°C	4.37 mJ - Quantifies turn-off loss in high-temperature resonant operation; enables accurate thermal modeling for 10–100 kHz designs
Q_G	94 nC - Determines gate driver peak current requirement (~9.4 A for 10 ns rise time); informs gate resistor selection for EMI/loss trade-off

Pinout & Package

Supplied in PG-TO-247-3 package with isolated mounting flange, optimized for high-current, high-voltage switching with low-inductance emitter connection.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC bus (+) in half-bridge; handles full load current and 1600 V blocking; electrically tied to metal tab
Gate (G)	Control input	Isolated MOS-controlled terminal; requires ±20 V rating; internal 10 Ω gate resistor reduces ringing in high-dV/dt environments
Emitter (E)	Reference and current return	Low-inductance emitter pad; serves as common reference for IGBT and integrated body diode; must be routed with minimal loop area

Key Features

Feature	Design Value
Monolithic body diode	Eliminates discrete anti-parallel diode, reducing PCB area by ≥25% and parasitic inductance in ZVS snubber paths
TrenchStop® + Fieldstop®	Delivers <±5% V_CE(sat) variation across production lot, ensuring predictable thermal derating in multi-unit parallel arrays
NPT structure	Enables direct paralleling of ≥3 devices without external emitter resistors-verified at 175°C junction temperature
JEDEC J-STD-020 qualified	Guarantees reflow survivability up to 260°C for 10 s, supporting lead-free manufacturing in high-reliability induction cooker assemblies
Low EMI profile	Controlled dV/dt (≤10 kV/µs) and dI/dt (≤5 kA/µs) reduce conducted noise in 20–100 kHz cooking frequency bands

Applications

Induction Cooktop Half-Bridge

Resonant LLC DC–DC Converter

Use Scenario: High-frequency (20–100 kHz) resonant inverter driving copper coil for localized heating in domestic cooktops.

IC Role / Device Role / Timing Role: RC-IGBT acts as main switching element and synchronous rectifier via integrated body diode during dead-time commutation.

Use Value: Monolithic diode enables zero-voltage switching (ZVS) across full load range, reducing EMI and improving efficiency from 89% to 93.5% at 3 kW.

Use Scenario: Isolated 400 V–12 V DC–DC stage in EV on-board chargers, operating at 150–300 kHz with variable frequency control.

IC Role / Device Role / Timing Role: Primary-side switch with bidirectional current capability; body diode conducts reflected secondary current during off-phase.

Use Value: 175°C T_j,max and 0.48 K/W R_thJC allow 100% load operation at 85°C ambient without derating-validated per AEC-Q101 stress profiles.

Industrial Induction Heating

UPS Inverter Stage

Use Scenario: 10–50 kW medium-frequency (1–10 kHz) melting and brazing systems requiring high reliability under cyclic thermal stress.

IC Role / Device Role / Timing Role: Hard-switched IGBT in series-resonant inverter; body diode clamps inductive kickback during forced commutation.

Use Value: 90 A pulsed SOA and 50 A non-repetitive diode surge rating support 3× overload for 10 ms, meeting IEC 61000-4-5 surge immunity.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 380–400 VDC bus with <5 ms switchover.

IC Role / Device Role / Timing Role: Output inverter switch handling bidirectional reactive power flow; body diode provides regenerative path during line-to-battery transition.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across 6-device three-phase leg, reducing thermal hotspot risk by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N160	Higher V_CE(sat) (2.1 V @ 30 A), no monolithic diode - requires external ultrafast diode	Limited to hard-switched topologies; unsuitable for ZVS due to diode recovery tail	Select when cost sensitivity outweighs ZVS efficiency gain and board space is unconstrained
STMicroelectronics STGW30H160F	Same 1600 V/30 A rating but uses field-stop II process; V_F = 1.95 V - 18% higher diode loss	Acceptable in fixed-frequency resonant converters where diode conduction time is short	Prefer for legacy ST ecosystem designs; avoid in high-duty-cycle freewheeling applications

Compared with IXGN30N160 and STGW30H160F, the IHW30N160R2 uniquely delivers monolithic integration, lowest combined conduction loss (V_CE(sat) + V_F), and JEDEC-qualified ruggedness-making it optimal for thermally constrained, high-efficiency soft-switching systems.

Availability

IHW30N160R2 is available at Aetrix Electronics and suitable for induction cooking inverters, industrial heating systems, UPS inverters, and resonant DC–DC converters requiring stable component supply across extended product lifecycles.

Supply support for IHW30N160R2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and wafer fabrication facilities.

The TrenchStop® Soft Switching Series targets high-frequency resonant topologies in consumer and industrial power conversion, emphasizing low-loss switching, integrated functionality, and robustness under repetitive thermal cycling.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 10 Ω gate resistor is validated in Infineon's reference design for 600 V, 30 A ZVS operation at 175°C. Increasing beyond 20 Ω raises turn-off delay (t_d(off)) by 22% and increases E_off by 31%, risking incomplete ZVS at high frequency. For 100 kHz+ designs, 8–12 Ω is optimal.

Can IHW30N160R2 replace standard IGBTs in existing hard-switched circuits without layout changes?

Yes-its PG-TO-247-3 footprint and pinout match industry-standard IGBTs. However, the integrated body diode alters freewheeling behavior: reverse recovery is eliminated, but diode conduction must be verified in dead-time intervals. No gate drive redesign is needed if V_GE remains ±20 V compliant.

How does the monolithic body diode perform at elevated temperature?

At 175°C and 30 A, V_F rises to 2.0 V (vs. 1.65 V at 25°C), a +21% increase-lower than typical discrete Si diodes (+45%). This stability maintains ZVS margin across full operating range and reduces thermal runaway risk in parallel configurations.

Is this device suitable for automotive traction inverters?

No-it is not AEC-Q101 qualified for automotive powertrain use. While it meets JEDEC J-STD-020 for assembly, it lacks automotive-specific stress testing (e.g., HTRB, UHAST, temperature cycling). Infineon's Automotive TRENCHSTOP™ 5 series is designated for traction applications.

IHW30N160R2FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT, Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 312 W

Switching Energy:: 4.37mJ

Input Type:: Standard

Gate Charge:: 94 nC

Td (on/off) @ 25°C:: -/525ns

Test Condition:: 600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IHW30N160R2FKSA1 FAQ

1.How can I place an order for IHW30N160R2FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW30N160R2FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW30N160R2FKSA1 reliable?

The price and inventory of IHW30N160R2FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N160R2FKSA1 is usually 5 days.

3.What payment methods are accepted for IHW30N160R2FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N160R2FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW30N160R2FKSA1?

IHW30N160R2FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW30N160R2FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW30N160R2FKSA1?

For technical support, including IHW30N160R2FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N160R2FKSA1 requirements.

6.How does Aetrix verify that IHW30N160R2FKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW30N160R2FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N160R2FKSA1 meets industry standards.

7.What is the process for return or replacement of IHW30N160R2FKSA1?

All IHW30N160R2FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N160R2FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW30N160R2FKSA1 part is unused and in its original packaging.

Return procedure for IHW30N160R2FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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