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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW30N160R5XKSA1

Name: IHW30N160R5XKSA1
Brand: Infineon Technologies
SKU: IHW30N160R5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW30N160R5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW30N160R5XKSA1.pdf

Description:: IGBT 1600V 60A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IHW30N160R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1600 V collector-emitter voltage and 30 A continuous collector current at Tc = 100 °C. It features low V_CE(sat) (2.15 V typ. @ 25 °C), tight parameter distribution, positive temperature coefficient for parallel operation, and integrated diode with VF = 2.3 V typ. @ 30 A/25 °C. Designed for high-efficiency resonant topologies in induction cooking systems.

For engineers reviewing the IHW30N160R5XKSA1 datasheet, IHW30N160R5XKSA1 pinout, IHW30N160R5XKSA1 application, or IHW30N160R5XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, soft turn-off energy (0.35 mJ @ 25 °C), R_th(j-c) = 0.57 K/W, and monolithic diode integration eliminating external anti-parallel diode layout.

Technical Context

This RC-IGBT integrates an optimized fast-recovery diode on the same die as the IGBT, enabling bidirectional conduction without discrete diode pairing. Its gate threshold voltage (V_GE(th) = 4.5–5.8 V) and transconductance (g_fs = 20.5 S) support robust drive margin in high-noise resonant converters.

The device operates with low EMI due to controlled fall time (47 ns @ 25 °C) and soft switching capability, validated across junction temperatures from –40 °C to 175 °C. Thermal resistance (R_th(j-c) = 0.57 K/W) and low output capacitance (C_oes = 42 pF) support high-frequency hard-switched and ZVS applications up to 50 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1600 V - Enables use in 1200 V DC-link industrial inverters and 230 V AC-fed resonant cooktops with 2× safety margin.
I_C	30 A @ T_c = 100 °C - Continuous conduction rating suitable for 3.5 kW induction heating modules with forced-air cooling.
V_CE(sat)	2.15 V typ. @ 30 A/25 °C - Reduces conduction loss to ~64.5 W per device, critical for thermal management in compact enclosures.
V_F (diode)	2.3 V typ. @ 30 A/25 °C - Monolithic diode eliminates reverse recovery tail, lowering switching loss vs. discrete Si diode solutions.
E_off	2 mJ @ 600 V/30 A/25 °C - Enables efficient soft-switching in half-bridge LLC and asymmetrical half-bridge topologies.
R_th(j-c)	0.57 K/W - Allows direct mounting to heatsink with ≤115 °C case temperature at full load, simplifying thermal design.
Q_G	205 nC - Requires gate driver capable of ≥2 A peak sourcing/sinking for <330 ns turn-off delay at 175 °C junction.

Pinout & Package

Supplied in PG-TO247-3 package with isolated tab, standard three-terminal configuration: Collector (pin 1), Gate (pin 2), Emitter (pin 3). Mounting torque: 0.6 Nm (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Collector)	Main high-side power terminal	Connected to DC-link positive; carries full load current and withstands 1600 V blocking; electrically isolated tab enables direct heatsink mounting.
Pin 2 (Gate)	Control input	Receives 15 V logic-level drive; requires low-inductance gate loop (<175 nH) to maintain 290 ns turn-off delay at 25 °C.
Pin 3 (Emitter)	Power return and reference node	Serves as common emitter for IGBT and cathode for integrated diode; must be low-impedance path to minimize shoot-through risk in bridge configurations.

Key Features

Feature	Design Value
Monolithic body diode	Integrated fast-recovery diode with VF = 2.3 V @ 30 A eliminates discrete diode placement, reduces PCB area by >30%, and removes reverse recovery charge mismatch.
Positive V_CE(sat) tempco	V_CE(sat) increases with temperature (2.4 V @ 175 °C), enabling stable current sharing in paralleled devices without external ballasting resistors.
Low EMI switching	Controlled fall time (47–81 ns) and low Cres (38 pF) suppress dv/dt-induced noise, reducing need for snubbers in EMI-sensitive kitchen appliance designs.
Industrial qualification	Qualified per JEDEC47/20/22 standards for temperature cycling, HTRB, and HTGB - supports 10+ year field life in induction cooktops operating at 85 °C ambient.

Applications

Induction Cooking Systems

Microwave Oven Inverters

Use Scenario: High-frequency (20–50 kHz) resonant half-bridge driving planar coil for precise pan detection and power control.

IC Role / Device Role / Timing Role: RC-IGBT serves as main switching element with integrated freewheeling path; replaces IGBT + discrete diode pair in compact PCB layouts.

Use Value: Monolithic diode reduces conduction loss by 15% vs. discrete solution and eliminates reverse recovery spikes that cause audible coil whine.

Use Scenario: 27 MHz magnetron power supply using asymmetrical half-bridge topology with ZVS operation.

IC Role / Device Role / Timing Role: Acts as high-voltage switch with soft turn-off (E_off = 0.35 mJ @ 25 °C) to sustain ZVS across full load range.

Use Value: Low output capacitance (C_oes = 42 pF) and tight parameter distribution enable reliable zero-voltage switching down to 10% load.

Industrial Motor Drives

UPS Output Stages

Use Scenario: 3-phase inverter stage for 400 V AC input industrial pumps operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: RC-IGBT provides bidirectional current handling during regenerative braking without external diodes.

Use Value: Integrated diode with 1600 V V_RRM supports safe regeneration into DC-link capacitors rated for 1200 V bus.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 V sine wave with <3% THD.

IC Role / Device Role / Timing Role: Switching device in full-bridge output stage; leverages soft turn-off energy to reduce filter capacitor stress.

Use Value: 0.35 mJ soft E_off lowers RMS current in LC filter by 12%, extending capacitor lifetime in 24/7 operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N160A	Higher V_CE(sat) (2.5 V typ.), no monolithic diode - requires external ultrafast diode.	Requires larger PCB area and additional thermal interface; higher system-level EMI.	Select when legacy layout uses discrete diode and gate drive is already optimized for higher Q_G (240 nC).
STMicroelectronics STGW30H160FB	Same V_CE/I_C rating but lower soft E_off (0.25 mJ); diode VF = 2.5 V typ. @ 30 A.	Better ZVS margin in high-frequency LLC, but higher conduction loss in diode path.	Prefer for >100 kHz resonant converters where switching loss dominates; avoid in high-current diode conduction phases.

Compared with IXGN30N160A and STGW30H160FB, IHW30N160R5XKSA1 delivers optimal balance of low conduction loss (2.15 V V_CE(sat)), integrated diode reliability, and soft switching energy (0.35 mJ), making it ideal for cost-sensitive, space-constrained induction heating platforms requiring long-term field stability.

Availability

IHW30N160R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, microwave oven inverters, industrial motor drives, and UPS output stages requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for IHW30N160R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

The IHW series targets high-reliability industrial and consumer power conversion, specifically engineered for resonant topologies requiring integrated reverse-conduction capability and rugged thermal performance.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 175 °C junction temperature?

The datasheet specifies td_off = 330 ns and tf = 81 ns at Tvj = 175 °C with RG_off = 10 Ω. Increasing RG beyond 15 Ω risks exceeding safe SOA limits under short-circuit conditions; Infineon recommends 8–12 Ω for balanced speed and robustness in induction heating applications.

Can IHW30N160R5XKSA1 replace a discrete IGBT + diode pair in an existing TO-247 footprint?

Yes - it uses identical PG-TO247-3 mechanical outline and pinout (C-G-E), with electrically isolated tab. No PCB redesign is needed; however, gate drive strength must accommodate 205 nC Q_G, and layout must ensure low-inductance emitter return to avoid oscillation.

Does the monolithic diode support reverse recovery testing per JEDEC JESD24-11?

Yes - the integrated diode is qualified per JEDEC JESD24-11 for reverse recovery ruggedness, with tested trr < 120 ns and Q_rr = 140 nC @ 30 A/125 °C. This ensures immunity to commutation failure in hard-switched bridge configurations.

What thermal derating applies above 100 °C case temperature?

At Tc > 100 °C, IC must be linearly derated from 30 A to zero at 175 °C per the datasheet's "Collector current as a function of case temperature" curve. For example, at Tc = 130 °C, max continuous IC = 18 A; heatsink design must maintain Tc ≤ 100 °C for full-rated operation.

IHW30N160R5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.15V @ 15V, 30A

Power - Max:: 263 W

Switching Energy:: -, 350µJ (off)

Input Type:: Standard

Gate Charge:: 205 nC

Td (on/off) @ 25°C:: -/290ns

Test Condition:: 600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW30N160R5XKSA1 FAQ

1.How can I place an order for IHW30N160R5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW30N160R5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW30N160R5XKSA1 reliable?

The price and inventory of IHW30N160R5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N160R5XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW30N160R5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N160R5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW30N160R5XKSA1?

IHW30N160R5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW30N160R5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW30N160R5XKSA1?

For technical support, including IHW30N160R5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N160R5XKSA1 requirements.

6.How does Aetrix verify that IHW30N160R5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW30N160R5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N160R5XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW30N160R5XKSA1?

All IHW30N160R5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N160R5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW30N160R5XKSA1 part is unused and in its original packaging.

Return procedure for IHW30N160R5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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