Infineon Technologies IHW30N65R5XKSA1

Overview

IHW30N65R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant switching in high-frequency power converters. It delivers 650 V V_CE, 30 A continuous collector current at T_C = 100 °C, 1.35 V V_CEsat at 25 °C, and operates up to 175 °C junction temperature in PG-TO247-3 package - enabling compact induction cooking and inverterized microwave oven inverters.

For engineers reviewing the IHW30N65R5XKSA1 datasheet, IHW30N65R5XKSA1 pinout, IHW30N65R5XKSA1 application, or IHW30N65R5XKSA1 equivalent, key selection criteria include its low E_off (0.24 mJ), tight V_CEsat distribution, positive temperature coefficient for parallel operation, and integrated diode with 95 ns t_rr at 25 °C.

Technical Context

This RC-IGBT integrates a fast, low-V_F diode (1.70 V at 30 A, 25 °C) monolithically on the same die, eliminating external anti-parallel diode layout complexity. Its TRENCHSTOP™ trench-gate structure ensures stable V_CEsat across temperature and tight parameter spread - critical for consistent resonant tank behavior in ZVS/ZCS topologies.

The device exhibits low dynamic losses: E_on = 0.85 mJ and E_off = 0.24 mJ under 400 V, 30 A inductive switching at 25 °C, with C_ies = 3690 pF and Q_G = 153 nC enabling predictable gate drive design. Its 13 nH internal emitter inductance supports low-noise commutation in high-dI/dt applications.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard 3-pin through-hole variant with isolated tab). Pin assignment verified per Infineon package drawing H30ER5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Compared with IKW30N65ES5XKSA1 and IRGP4062DPBF, IHW30N65R5XKSA1 provides superior resonant performance via lower V_CEsat, faster diode recovery, and monolithic integration - reducing component count and improving ZVS consistency in high-frequency induction systems.

Availability

IHW30N65R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking inverters, inverterized microwave ovens, and resonant LLC converters requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.

Supply support for IHW30N65R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's Resonant Switching Series RC-IGBT portfolio, engineered specifically for high-frequency soft-switching topologies in consumer and industrial induction heating where low E_off, fast diode recovery, and thermal stability are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 13 Ω for characterization at 30 A, 400 V. Using >15 Ω increases td(off) and E_off; values below 8 Ω risk excessive dV/dt-induced shoot-through. For 50 kHz operation, 10–12 Ω balances switching speed and EMI, confirmed by measured tr/tf ≤17/8 ns at 25 °C.

Does the integrated diode replace an external anti-parallel diode in all resonant topologies?

Yes - the monolithic diode is rated for IF = 23 A (DC, T_C = 25 °C) and t_rr = 95 ns, making it suitable for ZCS operation in half-bridge and full-bridge resonant converters. However, in asymmetric topologies with unidirectional diode conduction, verify peak reverse recovery current (I_rrm = 28 A) against circuit stress.

How does thermal resistance differ between IGBT and diode sections?

R_th(j-c) is 0.81 K/W for the IGBT section and 3.81 K/W for the integrated diode - reflecting different active area and thermal path geometry. This means diode self-heating dominates at high IF duty cycles; thermal design must prioritize average diode power (V_F × I_F(avg)) separately from IGBT conduction loss.

Is this part suitable for 175 °C junction operation in continuous conduction mode?

Yes - the device is rated for Tvj(max) = 175 °C and maintains V_CEsat ≤1.70 V and E_off ≤0.41 mJ at that temperature. Continuous 30 A operation requires case temperature ≤100 °C (per datasheet derating curve), achievable with ≥0.81 K/W heatsink thermal resistance and forced airflow.