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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW30N65R6XKSA1

Name: IHW30N65R6XKSA1
Brand: Infineon Technologies
SKU: IHW30N65R6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW30N65R6XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW30N65R6XKSA1.pdf

Description:: IGBT 650V 65A TO247-3

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Product details

Overview

IHW30N65R6XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 650 V V_CE, 30 A I_C (DC), and 90 A pulsed collector current. It delivers low V_CE(sat) of 1.60 V at 25 °C and 1.45 V at 175 °C, low E_off of 0.41 mJ at 175 °C, and integrated diode with 1.90 V V_F at 30 A/25 °C - enabling high-efficiency resonant topologies in induction cooking systems.

For engineers reviewing the IHW30N65R6XKSA1 datasheet, IHW30N65R6XKSA1 pinout, IHW30N65R6XKSA1 application, or IHW30N65R6XKSA1 equivalent, key selection criteria include its positive temperature coefficient in V_CE(sat) for stable parallel operation, tight parameter distribution for consistent system timing, and JEDEC-qualified ruggedness for industrial-grade thermal cycling reliability.

Technical Context

This RC-IGBT integrates an optimized IGBT die and a fast soft-recovery anti-parallel diode in a single TO-247-3 package, eliminating external diode placement and parasitic inductance. Its gate threshold voltage (V_GE(th)) ranges from 3.20 to 4.80 V, and transconductance (g_fs) is 70.0 S - supporting robust gate drive margin and linear control in variable-frequency inverters.

The device features low output capacitance (C_oes = 32 pF) and reverse transfer capacitance (C_res = 11 pF), enabling fast switching with reduced EMI. Thermal resistance from junction-to-case is 0.92 K/W for the IGBT and 3.94 K/W for the diode - allowing efficient heatsink coupling in compact induction heating modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - supports full-bridge inverter operation across 230 VAC mains with 2× safety margin.
I_C (DC, T_C = 25 °C)	65 A - enables high-power density designs without derating at ambient temperatures ≤50 °C.
V_CE(sat) @ 30 A/175 °C	1.45 V - reduces conduction loss by >25% vs. standard 650 V IGBTs, lowering thermal stress in sealed cooktop enclosures.
E_off @ 30 A/175 °C	0.41 mJ - minimizes turn-off loss in 20–50 kHz resonant converters, improving system efficiency above 95%.
V_F @ 30 A/25 °C (diode)	1.90 V - ensures low forward loss during freewheeling, critical for ZVS operation in half-bridge induction heaters.
t_rr @ 30 A/25 °C	90 ns - limits reverse recovery overshoot and dv/dt-induced gate ringing in hard-switched configurations.
R_th(j-c) (IGBT)	0.92 K/W - allows direct mounting to aluminum heatsinks with <1.5 K/W total thermal path for 100 W dissipation.

Pinout & Package

Supplied in PG-TO247-3 package with isolated tab (collector connected to case). Standard lead-free plating meets RoHS compliance. Mounting torque: 0.6 Nm (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	IGBT emitter terminal	Low-inductance return path for main power loop; connects to source-side PCB plane or shunt resistor.
Pin 2 (Collector)	IGBT collector terminal	Internally bonded to metal tab; electrically tied to heatsink - requires insulating thermal pad or ceramic washer.
Pin 3 (Gate)	IGBT gate control input	High-impedance MOS-controlled terminal; requires 15 V drive with <10 Ω series resistance to limit dI/dt and prevent oscillation.

Key Features

Feature	Design Value
Monolithic reverse-conducting diode	Eliminates discrete diode placement error and layout parasitics - reduces board area by ≥30% and improves ZVS consistency.
Positive V_CE(sat) tempco	Enables stable current sharing in paralleled IGBTs without active current balancing circuits.
Tight V_CE(sat) distribution (±0.14 V)	Reduces need for individual gate resistor tuning in multi-zone induction cooktops.
JEDEC industrial qualification	Validated per JESD22-A108 (temperature cycling), JESD22-A104 (HTOL), and JESD22-A110 (HAST) - supports 10+ year field life.
Low EMI profile (C_res = 11 pF)	Minimizes capacitive coupling into gate driver ICs, reducing need for ferrite beads or snubbers in EMI-critical kitchen appliances.

Applications

Induction Cooking System

Microwave Oven Inverter

Use Scenario: High-frequency (20–50 kHz) half-bridge inverter driving spiral coil for localized pan heating.

IC Role / Device Role / Timing Role: Main switching device in resonant LLC topology; handles bidirectional current via integrated diode during dead-time conduction.

Use Value: Low V_F and soft t_rr reduce switching losses and audible noise; tight V_CE(sat) spread ensures uniform power delivery across multiple cooking zones.

Use Scenario: 27 MHz magnetron power supply using variable-frequency DC-DC converter for precise power control.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetrical half-bridge; conducts load current during freewheeling phase via monolithic diode.

Use Value: 175 °C-rated junction enables compact heatsink design in space-constrained oven cavities; low E_off extends duty cycle without thermal throttling.

Industrial Induction Heater

Resonant Welding Power Supply

Use Scenario: 10–30 kW continuous-duty heater for metal preheating prior to forging or brazing.

IC Role / Device Role / Timing Role: High-current switching element in full-bridge inverter; operates at 10–25 kHz with forced-air cooling.

Use Value: Rugged 90 A pulsed rating and 1.45 V V_CE(sat) at 175 °C sustain full-load operation under ambient temperatures up to 70 °C.

Use Scenario: Capacitor-discharge welding controller requiring fast, repeatable energy pulses with minimal tail current.

IC Role / Device Role / Timing Role: Energy-switching IGBT in resonant discharge circuit; integrated diode provides controlled reverse recovery for pulse shaping.

Use Value: 90 ns t_rr and 2.00 µC Q_rr enable precise 1–10 ms pulse widths with <±2% energy variation across 10⁶ cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N60B3	600 V rating, higher V_CE(sat) (1.8 V typ), no monolithic diode - requires external ultrafast diode.	Limited to lower-voltage 200–240 VAC systems; unsuitable for 650 V bus designs without redesign.	Select only if legacy 600 V topology exists and cost sensitivity outweighs layout simplification benefits.
STMicroelectronics STGW30H65DFB	Same 650 V/30 A rating but uses field-stop trench IGBT + separate diode; higher C_res (15 pF) and slower t_rr (120 ns).	Higher EMI and gate drive complexity; less suitable for compact, noise-sensitive consumer appliances.	Prefer when existing ST ecosystem support (e.g., gate drivers, reference designs) is prioritized over lowest-loss performance.

Compared with IXGN30N60B3 and STGW30H65DFB, IHW30N65R6XKSA1 offers superior integration (monolithic diode), lower conduction loss (1.45 V vs. ≥1.65 V), and tighter parameter spread - delivering higher power density and reduced BOM count in new induction heating designs.

Availability

IHW30N65R6XKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, microwave oven inverters, and industrial induction heaters requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified ruggedness.

Supply support for IHW30N65R6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's TRENCHSTOP™ RC-IGBT product line, engineered specifically for high-efficiency, high-reliability resonant switching in domestic and light-industrial heating applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω gate resistor is validated in the datasheet for 30 A operation at 175 °C with 15 V drive. Increasing beyond 15 Ω raises turn-on delay and E_on disproportionately due to g_fs reduction at high temperature; values below 5 Ω risk gate oscillation from L_σ coupling. Use 8–10 Ω for optimal trade-off between loss and stability.

Can this IGBT be used without an external freewheeling diode?

Yes - the monolithic reverse-conducting diode is fully rated for 30 A DC and 90 A pulsed forward current, with 1.90 V V_F at 25 °C. It replaces external diodes in half-bridge and full-bridge topologies, provided layout avoids excessive diode junction temperature rise (>175 °C) through adequate heatsinking.

Is the TO-247-3 package electrically isolated?

No - Pin 2 (Collector) is internally connected to the metal tab, which must be electrically isolated from the heatsink using a thermally conductive, electrically insulating pad or ceramic washer. The package does not provide internal isolation; creepage and clearance must be maintained per IEC 60747-17 requirements for end-equipment safety certification.

How does the positive V_CE(sat) temperature coefficient improve system reliability?

As junction temperature rises, V_CE(sat) increases - causing current to naturally redistribute away from hotter devices in parallel configurations. This self-balancing behavior eliminates thermal runaway risk and removes the need for matched gate resistors or current-sense feedback loops, simplifying design and improving long-term field reliability in multi-IGBT modules.

IHW30N65R6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 65 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.6V @ 15V, 30A

Power - Max:: 163 W

Switching Energy:: 730µJ (on), 260µJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 13ns/161ns

Test Condition:: 400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr):: 90 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW30N65R6XKSA1 FAQ

1.How can I place an order for IHW30N65R6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW30N65R6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW30N65R6XKSA1 reliable?

The price and inventory of IHW30N65R6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N65R6XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW30N65R6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N65R6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW30N65R6XKSA1?

IHW30N65R6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW30N65R6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW30N65R6XKSA1?

For technical support, including IHW30N65R6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N65R6XKSA1 requirements.

6.How does Aetrix verify that IHW30N65R6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW30N65R6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N65R6XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW30N65R6XKSA1?

All IHW30N65R6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N65R6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW30N65R6XKSA1 part is unused and in its original packaging.

Return procedure for IHW30N65R6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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