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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW30N90R

Name: IHW30N90R
Brand: Infineon Technologies
SKU: IHW30N90R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW30N90R

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW30N90R.pdf

Description:: IGBT 900V 60A 454W TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,869

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Product details

Overview

IHW30N90R from Infineon Technologies is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 900 V collector-emitter voltage and 30 A DC collector current at T_C = 100 °C. It features 1.5 V typical V_CE(sat) at 25 °C, trench-and-fieldstop technology, and JEDEC J-STD-020 qualification - optimized for soft-switching ZCS topologies in microwave oven inverters.

For engineers reviewing the IHW30N90R datasheet, IHW30N90R pinout, IHW30N90R application, or IHW30N90R equivalent, key selection criteria include its positive temperature coefficient of V_CE(sat), low EMI profile, 175 °C maximum junction temperature, and integrated inverse diode with 1.4 V typical forward voltage at 30 A and 25 °C.

Technical Context

The IHW30N90R integrates an IGBT and anti-parallel diode on a single die using trench-gate and fieldstop architecture, enabling stable parallel operation and high ruggedness under repetitive short-circuit conditions. Its gate threshold voltage (5.1–6.4 V) and tight parameter distribution support robust gate drive design across industrial temperature ranges.

Designed specifically for zero-current switching (ZCS) resonant converters, it delivers 1.46 mJ total switching energy at 25 °C and 2.1 mJ at 175 °C (V_CC = 600 V, I_C = 30 A, R_G = 15 Ω), with internal emitter inductance limited to 13 nH for reduced voltage overshoot during turn-off.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	900 V - supports 600 V bus designs with 50 % voltage margin for transient overvoltage in resonant SMPS
I_C (DC, T_C = 100 °C)	30 A - defines continuous conduction capability in thermally constrained microwave oven power stages
V_CE(sat) (T_j = 25 °C)	1.5 V typical - enables low conduction loss (45 W at 30 A) and reduces heatsink requirements
T_j,max	175 °C - allows operation in high-ambient environments without derating below 100 °C case temperature
R_thJC	0.33 K/W - permits 454 W total power dissipation at T_C = 25 °C, critical for compact inverter packaging
E_ts (T_j = 175 °C)	2.1 mJ - quantifies total switching loss per cycle in ZCS operation, directly impacting thermal design at 20–50 kHz
C_iss	2889 pF - determines gate drive strength requirement and influences dv/dt immunity in hard-commutated transitions

Pinout & Package

Supplied in PG-TO-247-3 package with isolated mounting base, the IHW30N90R has three terminals: Collector (pin 1), Gate (pin 2), and Emitter (pin 3). The package provides 260 °C solderability and meets RoHS-compliant lead plating requirements.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Pin 1)	Main high-side current path	Connected to DC bus; carries full load current and withstands 900 V blocking; electrically tied to metal tab
Gate (Pin 2)	Control input for IGBT channel	Receives ±20 V DC / ±25 V transient drive; requires 200 nC total gate charge for full enhancement
Emitter (Pin 3)	Current return and reference node	Serves as common source for IGBT and integrated diode; low-inductance path critical for EMI control

Key Features

Feature	Design Value
Monolithic RC-IGBT structure	Eliminates discrete diode placement error and parasitic inductance, enabling precise ZCS timing alignment
Positive V_CE(sat) temperature coefficient	Ensures inherent current sharing stability when paralleling multiple devices without external ballasting resistors
Low EMI emission profile	Result of controlled fall time (24 ns typ. at 25 °C) and 13 nH internal emitter inductance, reducing radiated noise in ISM bands
JEDEC J-STD-020 qualified	Validated for reflow soldering up to 260 °C for 10 s at 1.6 mm from case, ensuring assembly reliability in high-volume OEM lines
Application-optimized inverse diode	1.4 V V_F at 30 A/25 °C and soft recovery reduce reverse recovery spikes in resonant tank circuits

Applications

Microwave Oven Inverter

ZCS Resonant DC-DC Converter

Use Scenario: High-efficiency 2.45 GHz magnetron power supply operating at 20–50 kHz with variable power control via duty cycle modulation.

IC Role / Device Role / Timing Role: Main switching device in half-bridge ZCS topology; conducts during resonant current zero-crossing to minimize switching loss.

Use Value: 1.5 V V_CE(sat) and 2.1 mJ E_ts at 175 °C enable >85 % system efficiency while maintaining <85 °C heatsink temperature in sealed cabinet.

Use Scenario: Isolated 400 V to 24 V DC-DC stage for industrial PLC power supplies requiring low audible noise and high reliability.

IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant converter; leverages monolithic diode for synchronous rectification during dead-time intervals.

Use Value: Integrated diode with 1.4 V V_F and soft recovery eliminates need for external SiC Schottky, reducing BOM count and layout area by 35 %.

Induction Heating Half-Bridge

UPS Inverter Stage

Use Scenario: 3.5 kW domestic induction cooktop operating at 20–100 kHz with adaptive frequency tracking and burst-mode power regulation.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge; blocks 900 V during freewheeling and commutates at zero current to suppress EMI.

Use Value: 0.33 K/W R_thJC and 175 °C T_j,max allow sustained 30 A conduction at 100 °C ambient without forced air cooling.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output with 10 ms transfer time and 94 % peak efficiency.

IC Role / Device Role / Timing Role: Output inverter switch in three-phase IGBT bridge; handles 30 A RMS output current with sinusoidal PWM at 16 kHz.

Use Value: Tight V_CE(sat) distribution (±0.1 V) ensures balanced phase current sharing across parallel modules without current-sense feedback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N90B3	900 V / 30 A RC-IGBT with 1.65 V V_CE(sat) and higher C_iss (3400 pF); no JEDEC qualification	Higher conduction loss (+12 % at 30 A) and less predictable thermal cycling endurance in consumer-grade ovens	Preferable only where gate drive strength exceeds 2.5 A peak and JEDEC reflow validation is not required
STMicroelectronics STGW30H90DLFB	900 V / 30 A RC-IGBT with 1.7 V V_CE(sat) and 1.55 V diode V_F; qualified to AEC-Q101 but lacks ZCS-optimized diode softness	Higher diode recovery loss increases EMI in resonant tanks; automotive qualification adds cost without benefit in white goods	Select only if automotive-grade traceability or extended temperature screening (-40 to 175 °C) is mandated by end-customer spec

Compared with IXGN30N90B3 and STGW30H90DLFB, the IHW30N90R offers the lowest combined conduction and switching loss in ZCS operation due to its 1.5 V V_CE(sat), 1.4 V diode V_F, and JEDEC-validated thermal robustness - making it optimal for cost-sensitive, high-volume microwave oven inverters.

Availability

IHW30N90R is available at Aetrix Electronics and suitable for microwave oven inverters, ZCS resonant DC-DC converters, and induction heating half-bridges requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for IHW30N90R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in industrial, automotive, and renewable energy markets.

The Soft Switching Series - including IHW30N90R - was developed specifically for zero-current switching topologies in high-frequency resonant converters, emphasizing low EMI, thermal stability, and monolithic integration of IGBT and optimized body diode.

FAQ

What is the maximum gate-emitter voltage rating for IHW30N90R?

The absolute maximum DC gate-emitter voltage is ±20 V, with a transient rating of ±25 V for pulses shorter than 5 ms. Exceeding ±20 V continuously risks gate oxide degradation, while operation above ±25 V even briefly may cause irreversible gate failure. Recommended gate drive uses +15 V turn-on and –5 V to –10 V turn-off for reliable noise immunity and fast switching.

Does IHW30N90R require an external freewheeling diode?

No - the IHW30N90R integrates a monolithic reverse-conducting diode optimized for soft recovery and low forward voltage (1.4 V typ. at 30 A, 25 °C). This eliminates the need for an external diode in half-bridge or resonant topologies, reducing PCB area, parasitic inductance, and component count. Its diode shares the same thermal path as the IGBT, ensuring matched temperature behavior.

How does the positive temperature coefficient of V_CE(sat) improve system reliability?

The positive temperature coefficient causes V_CE(sat) to increase with junction temperature (1.5 V at 25 °C → 1.7 V at 175 °C), which inherently limits current during thermal runaway events. When paralleled, warmer devices conduct less current, promoting natural current balancing without external resistors or active monitoring - a critical feature for high-power microwave oven inverters operating unattended for extended periods.

Can IHW30N90R be used in hard-switched applications?

Yes, but with significant trade-offs: its 2.1 mJ total switching energy at 175 °C is optimized for ZCS, not hard switching. In hard-switched topologies, E_off dominates and increases sharply with V_CE and I_C, raising thermal stress. For such use, gate resistor tuning (R_G ≥ 20 Ω) and snubber networks are mandatory, and maximum operating frequency must be reduced below 10 kHz to maintain T_j ≤ 150 °C.

IHW30N90R Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 900 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 30A

Power - Max:: 454 W

Switching Energy:: 1.46mJ

Input Type:: Standard

Gate Charge:: 200 nC

Td (on/off) @ 25°C:: -/511ns

Test Condition:: 600V, 30A, 15Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IHW30N90R FAQ

1.How can I place an order for IHW30N90R through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW30N90R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW30N90R reliable?

The price and inventory of IHW30N90R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N90R is usually 5 days.

3.What payment methods are accepted for IHW30N90R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N90R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW30N90R?

IHW30N90R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW30N90R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW30N90R?

For technical support, including IHW30N90R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N90R requirements.

6.How does Aetrix verify that IHW30N90R is sourced from the original manufacturer or authorized distributors?

All IHW30N90R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N90R meets industry standards.

7.What is the process for return or replacement of IHW30N90R?

All IHW30N90R units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N90R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW30N90R part is unused and in its original packaging.

Return procedure for IHW30N90R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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