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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW30N90TFKSA1

Name: IHW30N90TFKSA1
Brand: Infineon Technologies
SKU: IHW30N90TFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW30N90TFKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW30N90TFKSA1.pdf

Description:: IGBT 900V 60A 428W TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,341

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Product details

Overview

IHW30N90TFKSA1 from Infineon Technologies is a 900 V, 30 A TrenchStop® and Fieldstop IGBT with integrated anti-parallel diode in PG-TO-247-3 package, optimized for soft-switching ZCS topologies in microwave ovens and resonant converters. It delivers 1.5 V V_CE(sat) at 25°C, 1.1 V diode forward voltage, and operates up to 175°C junction temperature.

For engineers reviewing the IHW30N90TFKSA1 datasheet, IHW30N90TFKSA1 pinout, IHW30N90TFKSA1 application, or IHW30N90TFKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for parallel operation, low EMI profile, JEDEC-qualified ruggedness, and thermal resistance of 0.35 K/W (IGBT) and 1.1 K/W (diode).

Technical Context

This IGBT employs TrenchStop® and Fieldstop technology to achieve tight parameter distribution and stable switching behavior across -40°C to +175°C. Its 900 V blocking capability and 1.5 V saturation voltage at 30 A enable high-efficiency operation in hard- and soft-switching resonant converters.

The integrated anti-parallel diode is application-optimized for inverse recovery performance, with 1.1 V forward voltage at 10 A and 25°C. Transient thermal impedance modeling supports accurate pulsed power design, and gate charge of 280 nC enables predictable drive requirements with 15 Ω external gate resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	900 V - Enables use in 600–800 V DC bus systems with margin for voltage spikes in ZCS resonant converters.
I_C	30 A continuous at T_C = 100°C - Supports sustained output power in compact microwave oven inverters.
V_CE(sat)	1.5 V @ T_j = 25°C, 30 A - Reduces conduction loss by ~25% vs. comparable 1.8 V devices at rated current.
V_F (diode)	1.1 V @ T_j = 25°C, 10 A - Low forward drop minimizes reverse-recovery losses during zero-current switching transitions.
R_thJC (IGBT)	0.35 K/W - Enables 428 W total power dissipation at T_C = 25°C, critical for thermally constrained consumer appliance PCBs.
E_off	2.4 mJ @ T_j = 175°C, 600 V, 30 A - Quantifies turn-off energy under worst-case thermal conditions for snubber sizing.
Q_G	280 nC - Determines gate driver peak current requirement (~18.7 A for 15 ns rise time with 15 Ω R_G).

Pinout & Package

Package: PG-TO-247-3 - Standard through-hole power package with isolated collector tab, compatible with industry-standard heatsink mounting and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Electrically connected to metal tab; requires insulated mounting when heatsink is grounded.
Gate (G)	Control input for IGBT channel	High-impedance MOS-controlled terminal; sensitive to ESD and requires ≤ ±25 V transient rating compliance.
Emitter (E)	Current return path and reference node	Shared emitter node for IGBT and anti-parallel diode; defines common source for gate drive referencing.

Key Features

Feature	Design Value
Positive V_CE(sat) temperature coefficient	Enables stable current sharing in paralleled IGBT configurations without external ballasting resistors.
TrenchStop® + Fieldstop architecture	Delivers tight V_CE(sat) distribution (±0.1 V) and robust short-circuit withstand time (>3 µs at 150°C).
Optimized anti-parallel diode	Reduces reverse recovery charge Q_rr and peak reverse recovery current I_rrm, lowering EMI in ZCS circuits.
Pb-free lead plating & RoHS compliance	Meets global environmental regulations and supports lead-free reflow and wave soldering processes.

Applications

Microwave Oven Inverter

ZCS Resonant Converter

Use Scenario: High-frequency inverter stage converting 400 V DC bus to 27 MHz magnetron drive using half-bridge topology with resonant tank.

IC Role / Device Role / Timing Role: Main switching device in soft-commutated half-bridge; conducts during zero-current intervals to minimize switching loss.

Use Value: 1.1 V diode V_F and low E_off reduce heat generation in sealed cavity environments where cooling is limited.

Use Scenario: 100–200 kHz resonant DC-DC converter for industrial induction heating with variable load impedance.

IC Role / Device Role / Timing Role: Primary switch in LLC or series-resonant topology; leverages natural zero-current turn-on and turn-off.

Use Value: Tight V_CE(sat) distribution ensures balanced current sharing across multiple modules in multi-kW systems.

Induction Cooktop Driver

UPS Inverter Stage

Use Scenario: 20–50 kHz bridge driver powering planar coil with rapid load transients during pan detection and power modulation.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge; handles repetitive short-circuit events during pan absence.

Use Value: 175°C max junction temperature and 90 A pulsed current rating support burst-mode operation without thermal derating.

Use Scenario: Online double-conversion UPS inverter stage delivering clean 50/60 Hz sine wave under nonlinear loads.

IC Role / Device Role / Timing Role: Output stage switch in full-bridge configuration; operates in hard-switched mode with active clamping.

Use Value: 0.35 K/W R_thJC allows direct heatsink mounting with minimal thermal interface resistance for high-power density designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65DFB	650 V rating, 30 A, 1.6 V V_CE(sat), TO-247-3 package	Lower voltage rating limits use to ≤400 V DC bus; higher V_CE(sat) increases conduction loss in 900 V systems.	Select only if system DC bus is ≤450 V and thermal budget permits 0.1 V higher saturation drop.
IXYS IXGN30N90A3	900 V, 30 A, 1.8 V V_CE(sat), TO-247-3, no integrated diode	Requires external fast-recovery diode; lacks anti-parallel diode optimization for ZCS recovery.	Choose when discrete diode selection is preferred for custom recovery tuning or when diode stress exceeds integrated unit limits.

Compared with STGW30H65DFB and IXGN30N90A3, IHW30N90TFKSA1 provides superior voltage margin, lower conduction loss, and factory-matched diode characteristics-making it optimal for 800 V-class ZCS microwave and induction applications where integrated reliability and thermal efficiency are critical.

Availability

IHW30N90TFKSA1 is available at Aetrix Electronics and suitable for microwave oven inverters, ZCS resonant converters, and induction cooktop drivers requiring stable component supply, long-lifecycle availability, and JEDEC-qualified ruggedness.

Supply support for IHW30N90TFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

IHW30N90TFKSA1 belongs to the Soft Switching Series within Infineon's TrenchStop® IGBT portfolio, designed specifically for resonant and zero-current switching topologies in consumer and industrial power electronics.

FAQ

What is the maximum gate-emitter voltage rating for IHW30N90TFKSA1?

The absolute maximum DC gate-emitter voltage is ±20 V, with transient rating up to ±25 V for pulses less than 5 ms. Exceeding ±20 V continuously risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to ensure this limit is never breached under fault or ringing conditions.

Does IHW30N90TFKSA1 include an integrated anti-parallel diode?

Yes-it integrates a co-packaged, application-optimized fast-recovery diode with 1.1 V forward voltage at 10 A and 25°C. This diode is electrically and thermally coupled to the IGBT die, enabling matched thermal behavior and eliminating discrete diode layout parasitics in ZCS designs.

How does the positive temperature coefficient of V_CE(sat) benefit parallel operation?

The positive V_CE(sat) temperature coefficient causes hotter devices to exhibit higher saturation voltage, naturally diverting current toward cooler units. This self-balancing effect eliminates need for emitter resistors or active current-sharing circuits in multi-device parallel configurations.

What is the safe operating area (SOA) limitation at 175°C junction temperature?

At T_j = 175°C, the DC SOA is defined by V_CE ≤ 900 V and I_C ≤ 30 A, with pulsed SOA extending to 90 A for short durations limited by thermal runaway. The device maintains ruggedness per JEDEC JESD47, supporting 10 µs short-circuit withstand at rated voltage and temperature.

IHW30N90TFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 900 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 30A

Power - Max:: 428 W

Switching Energy:: 1.8mJ (off)

Input Type:: Standard

Gate Charge:: 280 nC

Td (on/off) @ 25°C:: 45ns/556ns

Test Condition:: 600V, 30A, 15Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IHW30N90TFKSA1 FAQ

1.How can I place an order for IHW30N90TFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW30N90TFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW30N90TFKSA1 reliable?

The price and inventory of IHW30N90TFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW30N90TFKSA1 is usually 5 days.

3.What payment methods are accepted for IHW30N90TFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW30N90TFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW30N90TFKSA1?

IHW30N90TFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW30N90TFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW30N90TFKSA1?

For technical support, including IHW30N90TFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW30N90TFKSA1 requirements.

6.How does Aetrix verify that IHW30N90TFKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW30N90TFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW30N90TFKSA1 meets industry standards.

7.What is the process for return or replacement of IHW30N90TFKSA1?

All IHW30N90TFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW30N90TFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW30N90TFKSA1 part is unused and in its original packaging.

Return procedure for IHW30N90TFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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