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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW40N120R5XKSA1

Name: IHW40N120R5XKSA1
Brand: Infineon Technologies
SKU: IHW40N120R5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW40N120R5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW40N120R5XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 80A TO247-3

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Product details

Overview

IHW40N120R5XKSA1 from Infineon is a 1200 V, 40 A reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant switching topologies in high-frequency induction heating systems. It features 1.55 V V_CE(sat) at 25°C, 175°C maximum junction temperature, and PG-TO247-3 package. Its TRENCHSTOP™ technology enables stable parallel operation and soft commutation in microwave oven inverters and induction cooktops.

For engineers reviewing the IHW40N120R5XKSA1 datasheet, IHW40N120R5XKSA1 pinout, IHW40N120R5XKSA1 application, or IHW40N120R5XKSA1 equivalent, key selection criteria include V_CE(sat) temperature stability, integrated diode forward voltage (1.90 V @ 40 A, 25°C), turn-off energy under soft-switching conditions (0.22 mJ), and thermal resistance (0.38 K/W j-c).

Technical Context

This RC-IGBT integrates a low-V_F body diode optimized for zero-voltage switching (ZVS) and zero-current switching (ZCS) in half-bridge resonant converters. Its positive V_CE(sat) temperature coefficient ensures current sharing in paralleled configurations, while tight parameter distribution supports consistent timing across production batches.

The device operates with gate-emitter threshold voltage of 5.8 V (typ.) and exhibits 310 nC total gate charge - enabling precise control of dv/dt during hard- and soft-switching transitions. Its 60 pF reverse transfer capacitance (C_res) and 2370 pF input capacitance (C_ies) support predictable gate drive design for 20–100 kHz induction heating applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Withstands DC bus voltages up to 800 V in resonant half-bridge designs with 50% voltage margin.
I_C	40 A continuous @ T_c = 100°C - Supports sustained output power >3 kW in induction cooking modules.
V_CE(sat)	1.55 V @ 40 A, 25°C - Minimizes conduction loss; rises to 1.90 V @ 175°C, enabling predictable thermal derating.
E_off (soft)	0.22 mJ @ dv/dt = 200 V/µs - Enables efficient ZVS operation with reduced EMI and snubber stress.
R_th(j-c)	0.38 K/W - Allows direct heatsink mounting with ≤100 W dissipation per device at ΔT = 38 K.
V_F (diode)	1.90 V @ 40 A, 25°C - Low forward drop reduces reverse recovery losses in synchronous rectification mode.
Q_G	310 nC - Requires ≥2 A peak gate driver capability for <500 ns turn-on with 10 Ω external resistor.

Pinout & Package

Supplied in PG-TO247-3 package with isolated tab (collector-connected), standard 3-pin through-hole configuration for high-power thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to heatsink via isolated metal tab; carries full load current and must be electrically insulated from chassis ground.
Gate (G)	Control terminal for IGBT channel	High-impedance MOS-gated input requiring low-inductance layout; sensitive to ringing above ±25 V transient rating.
Emitter (E)	Common reference node for IGBT and diode	Serves as return path for both IGBT collector current and integrated diode forward current; critical for Kelvin sensing in precision gate drive.

Key Features

Feature	Design Value
Monolithic body diode	Integrated 40 A diode with 1.90 V V_F enables single-package resonant half-bridge without discrete anti-parallel diode.
TRENCHSTOP™ process	Ensures ±5% V_CE(sat) distribution across lots - eliminates need for individual device binning in production assemblies.
Positive V_CE(sat) tempco	Enables stable current sharing in paralleled IGBTs without external emitter resistors or active balancing circuits.
Soft-switching optimized E_off	0.22 mJ under ZVS conditions - reduces switching loss by >60% vs. hard-switched operation at same frequency and current.
JESD-022 qualification	Validated for industrial temperature cycling and humidity exposure - supports 10+ year field life in consumer induction appliances.

Applications

Induction Cooktop Inverter

Microwave Oven Inverter

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz LC tank for pan detection and variable power control.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical ZVS topology; body diode conducts freewheeling current during dead time.

Use Value: Monolithic diode eliminates discrete diode placement error and parasitic inductance, improving ZVS reliability at 40 A peak current.

Use Scenario: 2.45 GHz magnetron power supply using series-resonant converter with variable frequency control.

IC Role / Device Role / Timing Role: Primary-side switching element operating at 25–45 kHz; handles pulsed 80 A peak currents during duty-cycle modulation.

Use Value: 175°C T_vj(max) and 0.38 K/W R_th(j-c) allow compact heatsinking in space-constrained oven chassis.

Industrial Induction Heater

Resonant UPS Inverter

Use Scenario: 10–30 kW medium-frequency (1–50 kHz) heating system with forced-air cooling and multi-module paralleling.

IC Role / Device Role / Timing Role: Main switching device in phase-shifted full-bridge; body diode recirculates reactive current during lagging power factor operation.

Use Value: Tight V_CE(sat) distribution and positive tempco enable direct paralleling of ≥4 devices without current-sharing resistors.

Use Scenario: Online double-conversion UPS with resonant DC-link inverter stage delivering clean 50/60 Hz sine wave output.

IC Role / Device Role / Timing Role: Resonant bridge switch handling bidirectional energy flow; body diode supports regenerative braking during overload transients.

Use Value: Low E_off (0.22 mJ soft) and 200 V/µs dv/dt rating reduce EMI filter size and improve system efficiency above 95%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N120B3	Higher V_CE(sat) (1.85 V @ 40 A), no monolithic diode - requires external ultrafast diode.	Designed for hard-switched PFC stages; lacks soft-switching E_off optimization.	Select when cost sensitivity outweighs ZVS efficiency gain and board space allows discrete diode layout.
STMicroelectronics STGW40H120DF2	Lower V_F (1.75 V) but higher E_off (0.35 mJ soft); 150°C T_vj(max).	Targeted at solar inverters with lower thermal margin; less rugged at 175°C continuous operation.	Prefer for ambient-temperature-limited designs where junction temperature stays below 150°C.

Compared with IXGN40N120B3 and STGW40H120DF2, IHW40N120R5XKSA1 delivers superior soft-switching efficiency (0.22 mJ E_off), full 175°C operation, and integrated diode - making it optimal for thermally constrained, high-reliability induction heating systems.

Availability

IHW40N120R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking modules, microwave oven inverters, industrial heating systems, and resonant UPS inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IHW40N120R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and consumer markets.

The Resonant Switching Series - including IHW40N120R5XKSA1 - was engineered specifically for high-frequency ZVS/ZCS topologies in induction heating, targeting low E_off, integrated diode functionality, and robust parallel operation.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies 10 Ω external gate resistor for standardized switching tests. For reliable turn-off with margin, use 8–12 Ω with a 2 A peak-rated gate driver. Higher values (>15 Ω) increase td(off) beyond 500 ns and risk shoot-through in half-bridge configurations due to delayed voltage transition.

Can IHW40N120R5XKSA1 replace a standard IGBT + external diode in existing designs?

Yes - its monolithic diode matches typical 40 A ultrafast diodes (e.g., MUR460) in V_F and recovery characteristics. Layout changes required: remove discrete diode footprint, verify Kelvin emitter routing, and confirm gate loop inductance remains <15 nH to preserve switching speed.

Is the TO247-3 package electrically isolated?

No - the metal tab is internally connected to the collector terminal. Electrical isolation must be achieved externally using insulating thermal pads or ceramic washers. The datasheet specifies 260°C wave soldering tolerance and 0.6 Nm M3 mounting torque for mechanical reliability.

How does V_CE(sat) change over temperature, and why does it matter for thermal design?

V_CE(sat) increases from 1.55 V at 25°C to 1.90 V at 175°C - a +22.6% rise. This directly increases conduction loss, so thermal design must account for worst-case loss at max T_vj. At 40 A, power dissipation rises from 62 W to 76 W, requiring ≥0.38 K/W heatsink thermal resistance to maintain safe junction temperature.

IHW40N120R5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.85V @ 15V, 40A

Power - Max:: 394 W

Switching Energy:: 1.6mJ (off)

Input Type:: Standard

Gate Charge:: 310 nC

Td (on/off) @ 25°C:: -/420ns

Test Condition:: 600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW40N120R5XKSA1 FAQ

1.How can I place an order for IHW40N120R5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW40N120R5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW40N120R5XKSA1 reliable?

The price and inventory of IHW40N120R5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW40N120R5XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW40N120R5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW40N120R5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW40N120R5XKSA1?

IHW40N120R5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW40N120R5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW40N120R5XKSA1?

For technical support, including IHW40N120R5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW40N120R5XKSA1 requirements.

6.How does Aetrix verify that IHW40N120R5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW40N120R5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW40N120R5XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW40N120R5XKSA1?

All IHW40N120R5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW40N120R5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW40N120R5XKSA1 part is unused and in its original packaging.

Return procedure for IHW40N120R5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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