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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW40N135R5XKSA1

Name: IHW40N135R5XKSA1
Brand: Infineon Technologies
SKU: IHW40N135R5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW40N135R5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW40N135R5XKSA1.pdf

Description:: IGBT TRENCH FS 1350V 80A TO247-3

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Product details

Overview

IHW40N135R5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, designed for resonant switching topologies in high-frequency power conversion. It delivers 40 A continuous collector current at 1350 V blocking voltage, 1.65 V V_CE(sat) at 25°C, and operates up to 175°C junction temperature. Its TRENCHSTOP™ technology enables soft commutation in induction cooking and microwave oven inverters.

For engineers reviewing the IHW40N135R5XKSA1 datasheet, IHW40N135R5XKSA1 pinout, IHW40N135R5XKSA1 application, or IHW40N135R5XKSA1 equivalent, key selection criteria include its integrated body diode forward voltage (1.95 V at 40 A, 25°C), low turn-off energy (0.30 mJ under soft-switching), positive V_CE(sat) temperature coefficient for parallel operation, and PG-TO247-3 package thermal resistance of 0.38 K/W.

Technical Context

This RC-IGBT integrates a fast, low-V_F body diode on the same die as the IGBT, eliminating external anti-parallel diode requirements in half-bridge resonant converters. Its TRENCHSTOP™ cell structure ensures tight parameter distribution and stable V_CE(sat) across temperature (1.65 V @ 25°C → 2.05 V @ 175°C).

The device supports soft-switching operation with dv/dt-rated turn-off energy (0.30 mJ at 200 V/µs), low output capacitance (C_oes = 70 pF), and gate charge (Q_G = 305 nC), enabling efficient zero-voltage switching (ZVS) in 20–100 kHz induction heating inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1350 V - Enables use in 1100 V DC-link systems with 20% margin for voltage transients in induction cooktops.
I_C	40 A continuous - Supports 3.5 kW–4.5 kW resonant inverter output with forced-air cooling at T_c = 100°C.
V_CE(sat)	1.65 V @ 25°C - Delivers <1.5 W conduction loss per device at 40 A, critical for thermal management in compact modules.
V_F (diode)	1.95 V @ 40 A, 25°C - Reduces reverse-recovery losses vs. discrete Si diodes, improving ZVS reliability in LLC topologies.
E_off (soft)	0.30 mJ @ dv/dt = 200 V/µs - Enables low-loss turn-off during resonant valley switching, minimizing EMI and snubber stress.
R_th(j-c)	0.38 K/W - Allows direct heatsink mounting with ≤1.5 K/W total thermal path to maintain T_vj ≤ 175°C at full load.
Q_G	305 nC - Requires gate driver capable of ≥2 A peak sourcing/sinking to achieve <500 ns td(off) with 10 Ω gate resistor.

Pinout & Package

Supplied in PG-TO247-3 package: isolated metal tab (collector), three leads (gate, emitter, collector), with screw-mount hole (M3) and 0.6 Nm max torque rating. Thermal path optimized via direct collector-to-heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side power terminal	Electrically connected to metal tab; must be electrically isolated from heatsink unless system design permits common-collector topology.
Emitter (Lead 1)	Power return and reference node	Serves as both IGBT emitter and body diode cathode; forms low-inductance return path for switching loop.
Gate (Lead 2)	Control input	Requires low-impedance gate drive (<10 Ω series resistance) and local 100 nF decoupling to suppress oscillation during hard switching.

Key Features

Feature	Design Value
Monolithic body diode	Eliminates discrete anti-parallel diode, reducing PCB area by ~30% and parasitic inductance in resonant tank loops.
Positive V_CE(sat) tempco	Enables stable current sharing in paralleled RC-IGBTs without active current balancing circuits.
Low EMI profile	Controlled dV/dt (200 V/µs) and low C_res (60 pF) reduce radiated emissions in unshielded kitchen appliance enclosures.
JESD-022 qualification	Validated for >1000 thermal cycles (−40°C to +125°C), ensuring reliability in consumer-grade induction cooktop field life (>5 years).

Applications

Induction Cooking Inverter

Microwave Oven Inverter

Use Scenario: Half-bridge resonant inverter driving 20–50 kHz LC tank for pan-bottom heating.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical ZVS topology; body diode conducts freewheeling current during dead time.

Use Value: Integrated diode eliminates need for separate ultrafast diode, reducing BOM count and layout complexity while maintaining <1.2% THD at full power.

Use Scenario: 27 MHz magnetron power supply using dual-resonant (LLC + Class-E) topology.

IC Role / Device Role / Timing Role: Primary-side switch operating in soft-commutation mode with controlled dv/dt to prevent magnetron arcing.

Use Value: 0.30 mJ soft-switching E_off enables >92% efficiency at 1.2 kW output while meeting CISPR-11 Class B conducted EMI limits.

Industrial Induction Heater

Wireless Power Transmitter

Use Scenario: 10–30 kW medium-frequency (50–200 kHz) heating system with water-cooled heatsinks.

IC Role / Device Role / Timing Role: Main switching element in full-bridge inverter; body diode handles reverse recovery during phase-shift control.

Use Value: 175°C T_vjmax and 0.38 K/W R_th(j-c) support continuous 100% duty-cycle operation with ΔT_c < 45 K under 3 L/min coolant flow.

Use Scenario: 15 W–65 W Qi-compliant transmitter pad with variable-frequency resonant control.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side full-wave bridge; body diode provides bidirectional conduction.

Use Value: Low V_F (1.95 V) reduces conduction loss by 35% vs. standard Si diodes, extending thermal headroom in space-constrained pads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N135A	Higher V_CE(sat) (1.85 V), no monolithic diode (requires external diode), higher Q_G (360 nC)	Requires additional diode footprint and layout; less suitable for compact induction modules	Select when legacy gate driver supports higher Q_G and board space allows discrete diode placement.
STMicroelectronics STGW40H135DF	Lower V_F (1.75 V), but higher E_off (0.42 mJ soft), same package	Marginally better conduction loss but increased switching loss in high-frequency ZVS	Select when priority is minimizing conduction loss over switching loss in <40 kHz designs.

Compared with IXGN40N135A and STGW40H135DF, IHW40N135R5XKSA1 offers the lowest combined conduction–switching loss product in 20–60 kHz resonant applications due to its balanced V_CE(sat)/E_off/V_F trade-off and monolithic integration.

Availability

IHW40N135R5XKSA1 is available at Aetrix Electronics and suitable for induction cooking inverters, microwave oven power supplies, industrial heating systems, and wireless power transmitters requiring stable component supply and long-term industrial availability.

Supply support for IHW40N135R5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to Infineon's Resonant Switching Series of RC-IGBTs, engineered specifically for high-efficiency, high-frequency ZVS/ZCS inverters in domestic and light-industrial heating applications.

FAQ

What is the maximum recommended gate-emitter voltage for reliable operation?

The absolute maximum transient gate-emitter voltage is ±25 V for pulses ≤10 µs (duty cycle <1%). For continuous operation, Infineon specifies ±20 V. Exceeding ±20 V risks permanent gate oxide damage, especially at elevated junction temperatures. Gate drivers must include clamping (e.g., 18 V Zener) and avoid ringing-induced overshoot beyond this limit.

Can IHW40N135R5XKSA1 replace a standard IGBT + external diode in an existing design?

Yes, it can directly replace a TO247-packaged IGBT plus ultrafast diode pair in half-bridge configurations, provided the gate drive remains compatible (same logic polarity and timing). Layout changes required include removing the discrete diode footprint and verifying that the shared emitter node does not introduce ground-loop noise in current-sense paths.

Is the body diode rated for reverse recovery in hard-switching applications?

No - the monolithic diode is optimized for soft-commutation (ZVS/ZCS) and exhibits slow reverse recovery (t_rr not specified). Hard-switching operation causes excessive diode recovery loss and potential failure. It must only be used where the diode conducts during zero-voltage or zero-current transitions, as in resonant topologies.

What thermal interface material is recommended for the metal tab?

Infineon recommends thermally conductive, electrically insulating materials with ≤0.15 K·in²/W (≈0.24 K·cm²/W) thermal resistance, such as Bergquist Sil-Pad 900S or Parker Chomerics Thermasil 300. Minimum mounting pressure of 25 psi and uniform torque (0.6 Nm ±10%) on the M3 screw are required to achieve the specified R_th(j-c) = 0.38 K/W.

IHW40N135R5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1350 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 40A

Power - Max:: 394 W

Switching Energy:: 2mJ (off)

Input Type:: Standard

Gate Charge:: 305 nC

Td (on/off) @ 25°C:: -/410ns

Test Condition:: 600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IHW40N135R5XKSA1 FAQ

1.How can I place an order for IHW40N135R5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW40N135R5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW40N135R5XKSA1 reliable?

The price and inventory of IHW40N135R5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW40N135R5XKSA1 is usually 5 days.

3.What payment methods are accepted for IHW40N135R5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW40N135R5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW40N135R5XKSA1?

IHW40N135R5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW40N135R5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW40N135R5XKSA1?

For technical support, including IHW40N135R5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW40N135R5XKSA1 requirements.

6.How does Aetrix verify that IHW40N135R5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW40N135R5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW40N135R5XKSA1 meets industry standards.

7.What is the process for return or replacement of IHW40N135R5XKSA1?

All IHW40N135R5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW40N135R5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW40N135R5XKSA1 part is unused and in its original packaging.

Return procedure for IHW40N135R5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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