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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW40N140R5LXKSA1

Name: IHW40N140R5LXKSA1
Brand: Infineon Technologies
SKU: IHW40N140R5LXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW40N140R5LXKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW40N140R5LXKSA1.pdf

Description:: IGBT 1400V 80A TO247-44

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Product details

Overview

IHW40N140R5LXKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 1400 V collector-emitter voltage and 40 A continuous collector current at Tc = 100 °C. It features low V_CE(sat) (1.95 V max at 125 °C), soft commutation capability via integrated diode, and positive temperature coefficient enabling stable paralleling. Used in high-efficiency resonant topologies of induction cooking systems.

For engineers reviewing the IHW40N140R5LXKSA1 datasheet, IHW40N140R5LXKSA1 pinout, IHW40N140R5LXKSA1 application, or IHW40N140R5LXKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, diode forward voltage matching, soft turn-off energy (0.287 mJ at 175 °C), and TO-247-3 package thermal resistance (0.41 K/W junction-to-case).

Technical Context

This RC-IGBT integrates a co-packaged, low-V_F body diode (1.95 V max at 125 °C) optimized for zero-voltage switching (ZVS) and soft commutation in half-bridge resonant inverters. Its gate threshold voltage (4–6.2 V) and transconductance (35.4 S) support robust drive margin under industrial temperature cycling.

The device exhibits tight parameter distribution and ruggedness up to 175 °C junction temperature, with turn-off delay time (230 ns at 175 °C) and fall time (1180 ns) characterized under standardized inductive load conditions (V_CC = 1120 V, R_G(off) = 10 Ω, L = 77 µH).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	1400 V - Supports 1200 V-class DC bus with 16.7% safety margin for surge and ringing in induction heating applications.
I_C Continuous	40 A @ T_c = 100 °C - Enables compact heatsink design in space-constrained induction cooker power stages.
V_CE(sat)	1.95 V max @ 125 °C - Reduces conduction loss by ~18% vs. comparable 1200 V IGBTs, improving system efficiency above 95%.
V_F (Diode)	1.95 V max @ 125 °C - Matches IGBT V_CE(sat) closely, minimizing asymmetry in ZVS transitions and reducing EMI.
E_off	0.287 mJ @ 175 °C - Low tail current enables fast, low-loss turn-off critical for >20 kHz resonant operation.
R_th(j-c)	0.41 K/W - Allows direct mounting to heatsink without thermal interface degradation, supporting 183 W dissipation at T_c = 100 °C.
Q_G	260 nC - Compatible with standard 2.5 A peak gate drivers; enables precise timing control in digital PWM controllers.

Pinout & Package

Supplied in PG-TO247-3-STD-NN2.5 package: isolated tab, 3-pin through-hole outline with 2.5 mm creepage distance between collector and emitter pins. Mounting torque: 0.6 Nm (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC bus (+); carries full load current and withstands 1400 V blocking; electrically tied to metal tab.
Gate (G)	Control input for IGBT channel	High-impedance MOS-controlled terminal requiring <100 nA leakage; sensitive to ESD; drives 260 nC charge.
Emitter (E)	Power return and reference node	Common node for IGBT emitter and diode cathode; defines signal ground for gate driver; low-inductance path critical for dV/dt immunity.

Key Features

Feature	Design Value
Monolithic body diode	Integrated low-V_F diode eliminates discrete diode placement error and parasitic inductance, enabling true soft commutation.
Positive V_CE(sat) tempco	Enables natural current sharing in parallel configurations without external ballasting resistors or active current balancing.
Low EMI profile	Controlled dV/dt (<1 kV/µs) and minimized tail current reduce radiated emissions, easing EMC compliance in consumer-grade induction cookers.
JESD-022 qualification	Validated for industrial lifetime reliability including temperature cycling, humidity bias, and HAST per JEDEC standards.
Pb-free & halogen-free	RoHS-compliant lead plating and IEC 61249-2-21 compliant materials meet global environmental and safety regulations.

Applications

Induction Cooker Power Stage

Microwave Oven Inverter

Use Scenario: Half-bridge resonant inverter driving series-LC tank at 20–50 kHz for precise pan detection and variable power control.

IC Role / Device Role / Timing Role: High-side switching element with integrated anti-parallel diode conducting freewheeling current during ZVS transitions.

Use Value: Soft turn-off energy (0.287 mJ) and matched V_F/V_CE(sat) minimize switching loss asymmetry, enabling >96% inverter efficiency at full load.

Use Scenario: Compact 1.2 kW magnetron supply using voltage-doubler rectification and resonant IGBT inverter.

IC Role / Device Role / Timing Role: Primary switch in self-oscillating or fixed-frequency resonant converter; body diode handles reverse recovery during dead-time.

Use Value: Tight parameter distribution ensures consistent startup behavior across production units, reducing field failure rate in high-volume OEM manufacturing.

Industrial Induction Heating

UPS Output Stage

Use Scenario: Medium-power (3–5 kW) solid-state induction heater for metal hardening, operating continuously at 10–30 kHz.

IC Role / Device Role / Timing Role: Main switching device in phase-shifted full-bridge topology; monolithic diode sustains reverse conduction during extended dead-times.

Use Value: 175 °C maximum junction temperature and 0.41 K/W R_th(j-c) allow derated operation at 100 °C case temperature without forced air cooling.

Use Scenario: Online double-conversion UPS output inverter stage delivering clean 50/60 Hz sine wave with low THD.

IC Role / Device Role / Timing Role: High-reliability switching element in three-phase IGBT bridge; body diode provides safe commutation path during PWM modulation.

Use Value: Very tight V_GE(th) distribution (4–6.2 V) ensures uniform gate drive timing across all six switches, minimizing neutral-point imbalance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN40N140A	Higher V_CE(sat) (2.2 V typ @ 125 °C), no monolithic diode - requires external ultrafast diode.	Less suitable for soft-commutated ZVS designs due to diode recovery mismatch and added layout parasitics.	Select when cost sensitivity outweighs efficiency targets and layout space permits discrete diode integration.
STMicroelectronics STGW40H140DF	Lower V_F (1.6 V typ @ 125 °C) but higher E_off (0.38 mJ @ 175 °C); same TO-247-3 package.	Better conduction loss but higher switching loss in high-frequency (>30 kHz) operation, limiting usable frequency range.	Select for lower-frequency (<20 kHz), high-current applications where conduction loss dominates total loss budget.

Compared with IXGN40N140A and STGW40H140DF, IHW40N140R5LXKSA1 delivers optimal balance of low V_CE(sat), matched diode V_F, and minimal E_off, making it uniquely suited for high-efficiency, high-frequency resonant converters where both conduction and switching losses must be simultaneously minimized.

Availability

IHW40N140R5LXKSA1 is available at Aetrix Electronics and suitable for induction cooker power stages, microwave oven inverters, industrial induction heating systems, and UPS output stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IHW40N140R5LXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's TRENCHSTOP™ RC-IGBT product line, engineered specifically for high-efficiency, high-reliability resonant power conversion in consumer and industrial heating applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies turn-off delay and fall time with R_G(off) = 10 Ω under standardized test conditions. For stable operation up to 50 kHz, R_G should not exceed 15 Ω to maintain adequate dV/dt control and avoid oscillation. Higher values increase switching loss and risk shoot-through in bridge configurations due to delayed turn-on/turn-off timing skew.

Can this IGBT be used in hard-switched topologies?

No - the monolithic body diode is explicitly designed for soft commutation only. Hard-switched operation causes excessive diode reverse recovery stress, leading to premature failure. The device lacks optimized reverse recovery characteristics and is not rated for hard-switched applications per Infineon's validation scope.

Is the metal tab electrically isolated from internal circuitry?

Yes - the collector is internally connected to the metal tab, which serves as the primary thermal path and high-current terminal. The tab is not isolated; it must be mounted to a grounded or floating heatsink with appropriate insulation if required by system safety standards (e.g., IEC 60335).

What is the significance of the 'R5' in the part number?

The 'R5' suffix denotes the specific generation and performance bin within Infineon's RC-IGBT family: it identifies the device as a 1400 V-rated part with optimized V_CE(sat)/E_off trade-off, soft turn-off energy rating, and monolithic diode V_F matching - distinct from earlier 'R3' or 'R4' variants with different thermal or dynamic characteristics.

IHW40N140R5LXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1400 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 40A

Power - Max:: 366 W

Switching Energy:: -, 240µJ (off)

Input Type:: Standard

Gate Charge:: 260 nC

Td (on/off) @ 25°C:: -/225ns

Test Condition:: 25V, 40A, 2.2Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-44

IHW40N140R5LXKSA1 FAQ

1.How can I place an order for IHW40N140R5LXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW40N140R5LXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW40N140R5LXKSA1 reliable?

The price and inventory of IHW40N140R5LXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW40N140R5LXKSA1 is usually 5 days.

3.What payment methods are accepted for IHW40N140R5LXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW40N140R5LXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW40N140R5LXKSA1?

IHW40N140R5LXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW40N140R5LXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW40N140R5LXKSA1?

For technical support, including IHW40N140R5LXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW40N140R5LXKSA1 requirements.

6.How does Aetrix verify that IHW40N140R5LXKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW40N140R5LXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW40N140R5LXKSA1 meets industry standards.

7.What is the process for return or replacement of IHW40N140R5LXKSA1?

All IHW40N140R5LXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW40N140R5LXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW40N140R5LXKSA1 part is unused and in its original packaging.

Return procedure for IHW40N140R5LXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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