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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IHW40N60RFKSA1

Name: IHW40N60RFKSA1
Brand: Infineon Technologies
SKU: IHW40N60RFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IHW40N60RFKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IHW40N60RFKSA1.pdf

Description:: IGBT TRENCH 600V 80A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IHW40N60RFKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) in the Resonant Switching Series, designed for soft-switched resonant converters. It delivers 600 V V_CE, 40 A I_C, 1.65 V V_CE(sat) at T_vj = 25°C, and operates up to 175°C junction temperature in PG-TO247-3 package - enabling high-efficiency induction cooking and inverterized microwave oven power stages.

For engineers reviewing the IHW40N60RFKSA1 datasheet, IHW40N60RFKSA1 pinout, IHW40N60RFKSA1 application, or IHW40N60RFKSA1 equivalent, key selection criteria include its monolithic body diode with low V_F, positive V_CE(sat) temperature coefficient for parallel operation, low EMI profile, and JESD-022 qualification for industrial power control.

Technical Context

This RC-IGBT integrates a co-packaged, low-V_F body diode optimized exclusively for soft commutation - not hard-switched freewheeling. Its TRENCHSTOP™ process ensures tight parameter distribution and ruggedness across temperature.

The device exhibits a positive temperature coefficient in V_CE(sat) (1.65 V @ 25°C → 2.10 V @ 175°C), enabling stable current sharing in paralleled configurations. Dynamic performance includes 223 nC total gate charge and 0.75 mJ turn-off energy at 25°C under standardized inductive load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - supports 400 V DC-link resonant converters with 50% voltage margin
I_C	40 A continuous - rated for sustained conduction in 2–100 kHz induction heating stages
V_CE(sat)	1.65 V @ T_vj = 25°C - enables <1.5 W conduction loss at 40 A, critical for thermal management
T_vj(max)	175 °C - allows operation in sealed, high-ambient industrial enclosures without derating
R_th(j-c)	0.49 K/W - permits direct heatsink mounting with ≤150 W dissipation before thermal throttling
Q_G	223 nC - determines gate driver strength requirement (≥2 A peak for 100 ns switching)
E_off	0.75 mJ @ 25°C - quantifies switching loss contribution in ZVS/ZCS topologies

Pinout & Package

PG-TO247-3 package with isolated tab (collector-connected), standard three-terminal layout for high-power discrete mounting and thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to heatsink tab; carries full load current and withstands 600 V blocking
Gate (G)	Control input	Receives ±20 V logic-level drive; 223 nC charge requires low-inductance gate loop
Emitter (E)	Power return and reference node	Serves as common source for IGBT and integrated diode; defines switching node potential

Key Features

Feature	Design Value
Monolithic body diode	Low 1.65 V forward drop at 40 A enables efficient soft recovery without external diode
Positive V_CE(sat) tempco	Ensures natural current balancing in paralleled IGBTs without external ballasting resistors
Low EMI signature	Controlled dV/dt and diode softness reduce conducted noise in EMI-sensitive kitchen appliances
JESD-022 qualification	Validated for long-term reliability in industrial power control environments with thermal cycling

Applications

Induction Cooking Systems

Inverterized Microwave Ovens

Use Scenario: High-frequency (20–50 kHz) half-bridge resonant inverters driving planar induction coils.

IC Role / Device Role / Timing Role: Primary switching device in resonant LLC topology, handling 2–4 kW power conversion with zero-voltage switching.

Use Value: Integrated diode eliminates need for discrete anti-parallel diode, reducing PCB area and parasitic inductance by >30%.

Use Scenario: Compact magnetron power supply using asymmetrical half-bridge with phase-shifted control.

IC Role / Device Role / Timing Role: High-side switch in soft-switched inverter delivering regulated 2.45 GHz RF excitation.

Use Value: 175°C T_vj(max) and robust SOA allow sustained 100% duty-cycle operation during defrost cycles.

Resonant DC-DC Converters

Soft-Switched UPS Modules

Use Scenario: Isolated 48 V–400 V bidirectional DC-DC stage in telecom rectifiers and EV chargers.

IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge, operating at 100–200 kHz with ZVS turn-on.

Use Value: Low 0.75 mJ E_off reduces switching losses by ~22% versus standard IGBTs at 150 kHz.

Use Scenario: Online double-conversion UPS output inverter with active PFC front-end.

IC Role / Device Role / Timing Role: Output stage IGBT in 3-phase inverter, managing transient overload with 120 A pulsed rating.

Use Value: 120 A I_Cpuls and 175°C T_vj support 150% overload for 10 s without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N60H3	Higher V_CE(sat) (1.85 V), lower Q_G (170 nC), same 600 V/40 A rating	Better suited for higher-frequency (>200 kHz) hard-switched PFC stages	Select when gate drive power budget is constrained and soft-switching margin is reduced
IRGP4062DPBF	Standard IGBT + separate diode; no monolithic integration; V_F = 2.2 V at 40 A	Requires external diode layout and increases layout complexity	Choose only if legacy design mandates discrete diode placement or thermal separation

Compared with IKW40N60H3 and IRGP4062DPBF, IHW40N60RFKSA1 uniquely combines monolithic diode integration, lowest V_F/V_CE(sat), and soft-recovery optimization - making it the preferred choice for resonant topologies where diode reverse recovery stress must be minimized.

Availability

IHW40N60RFKSA1 is available at Aetrix Electronics and suitable for induction cooking systems, inverterized microwave ovens, and resonant DC-DC converters requiring stable component supply and long-lifecycle support.

Supply support for IHW40N60RFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the Resonant Switching Series - engineered specifically for zero-voltage/zero-current switched topologies in consumer and industrial resonant power conversion.

FAQ

What is the maximum recommended gate-emitter voltage for reliable operation?

The absolute maximum V_GE is ±20 V per datasheet Rev. 2.6. For robust long-term operation, Infineon recommends limiting gate drive to +15 V / –5 V, as higher positive voltage increases leakage and accelerates gate oxide degradation. Gate drive circuits must include clamping to prevent overshoot beyond ±16 V during switching transients.

Does the integrated body diode support hard-switched freewheeling?

No - the monolithic diode is explicitly designed for soft commutation only. Its softness and low V_F are optimized for ZVS/ZCS transitions. Hard-switched operation causes excessive diode reverse recovery stress and premature failure, as confirmed in the "Features" section of the datasheet.

How does thermal resistance differ between IGBT and diode sections?

Both IGBT and diode share identical R_th(j-c) = 0.49 K/W, as they reside on the same die and use the same thermal path to the TO247 case. This symmetry simplifies thermal modeling and ensures matched junction temperature rise under combined conduction modes.

Is the PG-TO247-3 package lead-free and RoHS compliant?

Yes - the device uses Pb-free lead plating and is fully RoHS compliant, as stated in the "Features" section of the datasheet. The package meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for wave soldering at 260°C for 10 seconds at 1.6 mm from case.

IHW40N60RFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.05V @ 15V, 40A

Power - Max:: 305 W

Switching Energy:: 750µJ (off)

Input Type:: Standard

Gate Charge:: 223 nC

Td (on/off) @ 25°C:: -/193ns

Test Condition:: 400V, 40A, 5.6Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IHW40N60RFKSA1 FAQ

1.How can I place an order for IHW40N60RFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IHW40N60RFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IHW40N60RFKSA1 reliable?

The price and inventory of IHW40N60RFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IHW40N60RFKSA1 is usually 5 days.

3.What payment methods are accepted for IHW40N60RFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IHW40N60RFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IHW40N60RFKSA1?

IHW40N60RFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IHW40N60RFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IHW40N60RFKSA1?

For technical support, including IHW40N60RFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IHW40N60RFKSA1 requirements.

6.How does Aetrix verify that IHW40N60RFKSA1 is sourced from the original manufacturer or authorized distributors?

All IHW40N60RFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IHW40N60RFKSA1 meets industry standards.

7.What is the process for return or replacement of IHW40N60RFKSA1?

All IHW40N60RFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IHW40N60RFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IHW40N60RFKSA1 part is unused and in its original packaging.

Return procedure for IHW40N60RFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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